PLASTIC ENCAPSULATE TRANSISTORS 1.BASE 2.COLLECTOR 3.EMITTER
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2SD1802
PLASTIC ENCAPSULATE TRANSISTORS
1.BASE 2.COLLECTOR 3.EMITTER
D-PAK(TO-252) ABSOLUTE MAXIMUM RATINGS (TA=25°C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO Tstg Limits +150 +150 Unit
ELECTRICAL CHARACTERISTICS(TA=25°Cunless otherwise noted) Parameter Collector-Base Breakdown Voltage IC=10µA Symbol BVCBO BVCEO BVEBO ICBO IEBO Unit
Collector-Emitter Breakdown Voltage IC=1.0mA Emitter-Base Breakdown Voltage IE=10µA
Collector Cutoff Current VCB=40V Collector Cutoff Current =4.0V
WEITRON
http://www.weitron.com.tw
14-Jul-06
2SD1802
CHARACTERISTICS Current Gain VCE=2V, IC=0.1A VCE=2V, IC=3.0A Collector-Emitter Saturation Voltage =2A, =0.1A Base-Emitter Saturation Voltage =2A, =0.1A hFE(1) hFE(2) VCE(sat) VBE(sat)
DYNAMIC CHARACTERISTICS Transition Frequency VCE=10V, C=50mA Output Capacitance VCB=10V, IE=0, f=1.0MHz Turn-off time VCC=25V, IC=1A, IB1=-IB2=0.1A Fall time VCC=25V, IC=1A, IB1=-IB2=0.1A Storage time VCC=25V, IC=1A, IB1=-IB2=0.1A
CLASSIFICATION hFE(1) Rank Range
WEITRON
http://www.weitron.com.tw
14-Jul-06
2SD1802
Typical Characteristics
Collector Current, IC(A)
Collector Current, IC(A)
-100m
100mA 80mA 60mA
-50m
40mA
20mA
10mA
-20mA
-10mA
-5mA IB=0
IB=0
-0.8 -1.2 -1.6 -2.0 Collector Emitter Voltage, VCE(V)
-0.4
Collector Emitter Voltage, VCE(V)
-2.0 Collector Current, IC(A) -1.6 -1.2 -0.8 -0.4
Collector Current, IC(A)
-12mA -10m
-8mA
-6mA
-4mA
-2mA
IB=0
IB=0
-0.8 -1.2 -1.6 -2.0 Collector Emitter Voltage, VCE(V)
-0.4
Collector Emitter Voltage, VCE(V)
WEITRON
http://www.weitron.com.tw
14-Jul-06
2SD1802
TO-252 Outline Dimensions
unit:mm
TO-252
6.40 9.00 0.50 2.20 0.45 1.00 5.40 0.30 0.70 0.90
6.80 10.00 0.80 2.30 2.50 0.55 1.60 5.80 0.64 1.70 1.50
WEITRON
http://www.weitron.com.tw
14-Jul-06
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