Transistors TO-92 EMITTER COLLECTOR BASE ABSOLUTE MAXIM
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2SD1616 2SD1616A
Transistors
TO-92
EMITTER COLLECTOR BASE
ABSOLUTE MAXIMUM RATINGS (Ta=25
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation TA=25 Junction Temperature Storage, Temperature Symbol VCEO VCBO VEBO Tstg 2SD16116 0.75 +150 2SD1616A Unit
ELECTRICAL CHARACTERISTICS
Characteristics Collector-Emitter Breakdown Voltage (IC= mAdc, IB=0) Collector-Base Breakdown Voltage (IC= uAdc, IE=0) Emitter-Base Breakdown Voltage (IE= uAdc, IC=0) Collector Cutoff Current (VCB=60 Vdc, IE=0) Emitter Cutoff Current (VEB= Vdc, C=0) 2SD1616 2SD1616A 2SD1616 2SD1616A Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Unit uAdc uAdc
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2SD1616 2SD1616A
ELECTRICAL CHARACTERISTICS (TA=25 unless otherwise noted) (Countinued)
Characteristics Symbol Unit
CHARACTERISTICS
Current Gain (IC=100 mAdc, VCE=2.0 Vdc) Current Gain (IC=1.0 mAdc, VCE= Vdc) Collector-Emitter Saturation Voltage (IC= mAdc, mAdc) Base-Emitter Saturation Voltage (IC= mAdc, mAdc) Base-Emitter Voltage =50mA, =2.0V) Current-Gain-Bandwidth Product (IC= mAdc, VCE=2.0 Vdc, f=30MHz) Output Capacitance (VCB=10V, =0V, 1MHZ) VCE(sat) VBE(sat) BE(on)
0.15
0.64
SWITCHING CHARACTERISTICS Turn-On Time Storage Time Fall Time Note: Pulse Test: Pulse Width Duty Cycle Classification hFE(1) Rank Range 135-270 200-400 300-600 =10V, =100 B1=-IB2=10 VBE(OFF) =2-3V
0.07 0.95 0.07
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2SD1616 2SD1616A
Typcial Characteristics
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2SD1616 2SD1616A
Typcial Characteristics
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2SD1616 2SD1616A
TO-92 Outline Dimensions
unit:mm
TO-92
3.70 3.30 1.40 1.10 0.55 0.38 0.51 0.36 4.70 4.40 3.43 4.70 4.30 1.270TYP 2.44 2.64 14.10 14.50
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