F0513005L Gb/s Data Rate Laser Diode Driver Application
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Features Gb/s high speed operation Positive thermal coefficient modulation current Differential compatible interface -5.2 single power supply modulation current bias current Maximum bias current preset control Low-cost 18-terminal package
F0513005L
Gb/s Data Rate
Laser Diode Driver
Applications Laser diode driver optical transmitter circuit Gb/s
Functional Description F0513005L high performance GaAs integrated laser diode driver optical transmitter circuit Gb/s data rate. F0513005L typically specifies rise time fall time psec features single -5.2 supply operation, presettable bias current modulation current while dissipating typical. choice three packages available match various application requirements: 18-terminal leadless chip carrier (LCC) called F0513005L, 18-lead metalbased flat package (MFP) called F0513005M, 20-lead plastic-molded package called F0513005S.
Gb/s Laser Diode Driver
Absolute Maximum Ratings
F0513005L
unless specified
Parameter Supply Voltage Power Dissipation Input Voltage Output Voltage Modulation Current Control Voltage Maximum Bias Current Setting Voltage Voltage Storage Temperature Ambient Operating Temperature Symbol Pdis VIN1, VIN2 VOUT1, VOUT2 VAPC1,VAPC2 Tstg Value VSS+1.3 VSS+1 +125 Units
Recommended Operating Conditions unless specified
Value Parameter Supply Voltage Output Voltage Ambient Operating Temperature Symbol Min. VOUT1, VOUT2 -5.5 -2.0 Typ. -5.2 -1.0 Max. -5.0 Units
Gb/s Laser Diode Driver
Electrical Characteristics
F0513005L
unless specified
Value Parameter Circuit Current Input Voltage Input Current Symbol IIN1,IIN2 IMMAX Modulation Current IMMIN VIN1,VIN2 =-1.9V VIN1 =-1.7V, VIN2 =-0.9V VAPC1 =-2.5 VAPC2 =-3.9V, =-5.2V VIN1 =-1.7V, VIN2 =-0.9V VAPC1 =-2.5 VAPC2 =-2.5V, =-4.2V 50mA (Ta= VIN1 =-0.9V, VIN2 =-1.7V VAPC1 =0V, VAPC2 =-2.5V =-5.2V, =-4.2V IBMIN Rise Time Fall Time VIN1 =-0.9V, VIN2 =-1.7V VAPC1 =-2.5V, VAPC2 =-0V =-5.2V, =-5.2V Test Conditions Min. =-5.2V, VB=-5.2V Differential Mode -1.9 -150 -1.7 -0.9 Typ. Max. -0.7 Units
Thermal Coefficient(2)
IMTC
IBMAX Bias Current
except modulation current IMTC NOTES: Modulation circuit VIN1 VIN2 Modulation circuit off: VIN1 VIN2 Bias circuit VAPC1 VAPC2 Bias circuit off: VAPC1 VAPC2
Gb/s Laser Diode Driver
Block Diagram
OUT1 OUT2
F0513005L
VIN1 VIN2
VAPC2 VAPC1
Input Buffer
Switching Section
Bias Setting Section Level Shifter
Assignments (Bottom View)
Descriptions
OUT1 VAPC1 VAPC2 OUT2 VIN2 VIN1 Output Connection Signal Input Maximum Bias Current (IBMAX )Setting Voltage Supply Voltage Supply Voltage Modulation Current Control Voltage Reference Voltage Connection Output Connection Differential Mode Input Supply Voltage Connection Connection Supply Voltage Differential Mode Input Supply Voltage
No.1 LEAD IDENTIFIER
Gb/s Laser Diode Driver
Test Circuits Characteristics
F0513005L
OUT1 VIN1
OUT2 VAPC1
VIN2
F0513005L VAPC2
4400pF -5.2V Characteristics
Sampling Oscilloscope OUT1 Pulse Pattern Generrator VIN1
OUT2 VAPC1
VIN2
F0513005L VAPC2 4400pF -5.2V
Gb/s Laser Diode Driver
Typical Characteristics Switching characteristics
F0513005L
Modulation Current Switching
Output Current Switching
Modulation Current (mA)
Output Current IOUT (mA)
VM=-3.9V VM=-4.2V
VM=-3.9V
VM=-4.2V VM=-4.5V
VM=-4.5V
-1.8
-1.3
-0.8
-1.8
-1.3
-0.8
Input Voltage VIN1(V) (VB=-5.2V, VAPC1=-2.0V,VAPC2=-0V)
Input Voltage VIN1(V) (VB=-5V, VAPC1=-1.3V,VAPC2=-1.3V)
Modulation Current
Maximum Bias Current
Maximum Bias Current IBMAX (mA)
Modulation Current (mA)
-5.5
-4.5
-3.5
-5.5
-4.7
-4.2
Control Voltage (VB=-5.2V, VAPC1=-2.0V, VAPC2=0V) (VIN1=-1.8V, VIN2=-0.8V)
Control Voltage (VM=-5.2V, VAPC1=0V, VAPC2=-2.0V) (VIN1=-0.8V, VIN2=-1.8V)
Gb/s Laser Diode Driver
Bias control voltage IBMAX=20mA
50.0 50.0
F0513005L
IBMAX=50mA
VAPC2(V) -3.0 -2.5 -2.0 -1.5 -1.0 -0.5
5.0/div
Bias Current (mA)
5.0/div
VAPC2(V) -3.0 -2.5 -2.0 -1.5 -1.0 -0.5
Bias Current (mA)
-3.0
0.3/div
-3.0
0.3/div
Voltage VAPC1 (VM=-5.2V, VB=-5.2V) (VAPC2=-3.0V step 0.5V)
Voltage VAPC1 (VM=-5.2V, VB=-5.2V) (VAPC2=-3.0V step 0.5V)
Dependence modulation current ambient temperature
(mA)
Temperature (°C) (VIN1=-1.8V, VIN2=-0.8V) (VB=-5.2V, VAPC1=-2.0V, VAPC2=0V)
Gb/s Laser Diode Driver
Typical Characteristics
F0513005L
diagrams pseudo-random data response electrical output Vp-p, Gb/s (PRBS 223-1)
mV/div
psec/div Gb/s (PRBS 223-1)
mV/div
psec/div
Gb/s Laser Diode Driver
Application Notes Example circuit block diagram drive laser diode
Sampling Oscilloscope
F0513005L
Converter OUT1 OUT2 VAPC1
Pulse Pattern Generator
VIN1
VIN2
F0513005L VAPC2 4400pF -5.2V
NOTE resistors series with OUT1 OUT2 respectively damping resistors. Their values selected minimize ringing caused impedance mismatch laser diode. These values change depending upon type laser diode used.
diagrams Gb/s pseudo-random data response optical output PRBS 223-1, Vp-p,
*Laser Diode: Mitsubishi FU-63SDF
Gb/s Laser Diode Driver
Example circuit
.027µ .027µ .027µ
F0513005L
.027µ
monitor -2.7V
1.1k
-1.5V
240k
-2.4V
13.5k 12.5k -5.2V *LM324 7.5k 18.5k -5.2V -5.2V
DATA
OUT1 OUT2 VIN1 VAPC1 VIN2 VAPC2 -4.4V F0513005L
DATA
-4.4V .027µ
-1.5V .027µ .027µ
1.6k -5.2V
8.8k
4400p -5.2V
8.8k
1.6k -5.2V
7.5k
18.5k -5.2V
Example evaluation board
NOTE:
open circles indicate soldering positions coaxial cables. Islands termination resistors bias points. When driven from Picologic, they should connected Otherwise, they connected ground.
Gb/s Laser Diode Driver
F0513005L
General Description Bias current modulation current very important electrical characteristics laser diode. center value driving current laser diode bias current, which designed presettable ranging from controlled voltage terminal according threshold current employed laser diode application. optical output power proportional amplitude driving current laser diode called modulation current which controlled from voltage terminal. Protection against laser thermal runaway provided auto power control. VAPC terminal used control bias current setting negative feedback, monitoring optical output power photo diode. Positive Temperature Characteristics most remarkable feature F0513005L, which found other IC's, positive temperature characteristics modulation current designed +0.5 %/°C. Emission efficiency typical laser diodes exhibits negative temperature characteristics; their optical output decreases with increasing ambient temperature. case multiquantum well (MQW) laser diodes, which focus keen interest, temperature coefficient -0.5 %/°C reported. F0513005L successfully compensate temperature fluctuation optical output power, providing stable extinction ratio. driver circuit does have positive temperature characteristic modulation current, bias current increases above threshold current higher temperature, resulting degradation extinction ratio. impossible achieve this kind compensation external circuits; however, unrealistic owing inevitably troublesome tuning. User-friendly Design F0513005L features user-friendly design system designers, permitting single power supply operation. differential compatible input direct control from conventional GaAs logic IC's provided. unique auto power controls (VAPC1, VAPC2) permit modulation bias current control setting mechanism protect laser diode against thermal runaway. controls modulated rates MHz.
Gb/s Laser Diode Driver
Packaging
F0513005L
F0513005L 18-terminal ceramic package about square with lead pitch mil, achieving miniaturization cost. convenient designers miniaturize circuit area owing leadless package with small dimension. F0513005M packaged 18-lead ceramic about square with lead pitch also available another choice this device, allowing enhance flexibility assembling design. originally developed improve performance heat radiation. Compared with LCC, ground potential stabler microwave frequency range thermal resistivity smaller metalbased bottom structure made from alloy copper tungsten) with high thermal conductivity. electrical characteristics both IC's almost equal system performance depends assembling design. F0513005M more suitable application requiring very excellent pattern performance severe thermal stability. Precautions Owing their small dimensions, GaAs FET's from which F0513005L designed easily damaged destroyed subjected large transient voltages. Such transients generated power supplies when switched properly decoupled. also possible induce spikes from static-electricity-charged operations ungrounded equipment.
Gb/s Laser Diode Driver
Package Drawings
F0513005L
6.35±0.2 0.41 2.30
0.60
0.22-R
0.80
1.27
0.97
Notes: dimensions millimeters. Package made ceramic. Leads plated copper. Base metal copper tungsten.
Electron Device Department
6.35±0.2
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