Features +3.3V +5.0 single power supply transimpedance load) Typical 2

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Features +3.3V +5.0 single power supply transimpedance load) Typical 2

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02.08.06
Features +3.3V +5.0 single power supply transimpedance load) Typical 2200 broad bandwidth high gain Over wide dynamic range Differential output Excellent equivalent input noise current pA/Hz
F0100404B
3.3V/5V 1.25 Gb/s Receiver
Transimpedance Amplifier
Applications Ethernet (1.25 Gb/s) Preamplifier optical receiver circuit fiber channel (1.0625 Gb/s)
Functional Description F0100404B stable GaAs integrated transimpedance amplifier capable gain typical 1900 dB-cutoff-frequency, making ideally suited optical receiver circuit Gbit Ethernet (1.25 Gb/s), instrumentation, measurement applications. integrated feedback loop design provides broad bandwidth stable operation. F0100404B typically specifies high transimpedance (RL=50 with wide dynamic range over Furthermore, operate with supply voltage single +3.3V +5.0 features typical dissipation current Only chip-shipment available product lineups GaAs transimpedance amplifiers, because packaged preamplifier operate with maximum performance owing parasitic capacitance package.
1.25Gb/s Transimpedance Amplifier
Absolute Maximum Ratings
F0100404B
Ta=25 unless specified
Parameter Supply Voltage Supply Current Ambient Operating Temperature Storage Temperature Symbol VDD3.3 VDD5.0 Tstg Value VSS-0.5 VSS+4.0 VSS-0.5 VSS+7.0 +125 Units
Recommended Operating Conditions Ta=25 VSS=GND, unless specified
Value Parameter Symbol Min. Supply Voltage Ambient Operating Temperature VDD3.3 VDD5.0 Max. 5.25 Units
Electrical Characteristics Ta=25 VDD=3.3V, VSS=GND, unless specified
Value Parameter Supply Current Gain(Positive) Gain(negative) High Frequency Cut-off (positive) High Frequency Cut-off (negative) Input Impedance Trans-Impedance(positive) *1,*2 Trans-Impedance(negative) *1,*2 Output Voltage(positive) Output Voltage(negative) Input Voltage Terminal Voltage Symbol S21P S21N Test Conditions Min. PIN=-50dBm f=1MHz, RL=50 PIN=-50dBm f=1MHz, RL=50 PIN=-50dBm RL=50 PIN=-50dBm RL=50 f=1MHz f=1MHz f=1MHz 13.0 13.0 1.25 1.25 0.75 Typ. 16.0 16.0 Max. 21.0 21.0 1.15 Units
S21P,N Defined ZTP,N= RI+50 Voltage DD3.3 when supplied voltage(4.50~5.25 VDD5.0
1.25Gb/s Transimpedance Amplifier
Block Diagram
F0100404B
VDD5.0
VDD3.3
Level Shift OUTB Buffer OUTB
Description
VDD3.3 VDD5.0 OUTB
Power Supply Power Supply Power Supply Input Output Output
1.25Gb/s Transimpedance Amplifier
Assignments
F0100404B
(12)
(11)
(10)
(13)
(14)
Symbol VDD3.3 VDD5.0 OUTB OUTB
Center Coordinates(µm) (75,155) (315,75) (555,75) (715,75) (715,235) (715,395) (715,555) (715,715) (555,715)
(10) (11) (12) (13) (14)
Symbol VDD3.3 VDD3.3
Center Coordinates(µm) (395,715) (235,715) (75,715) (75,555) (75,395)
(0,0) (790,790)
1.25Gb/s Transimpedance Amplifier
Test Circuits Characteristics
F0100404B
Pin=-50 f=300 kHz~3
Network Analyzer
Prober
Switch
Sensitivity Characteristics
0.022µF
Converter
Optical Attenuater
0.022µF
Pulse Pattern Generator
0.022µF Comparator F0311018S
Error Rate Tester
1.25Gb/s Transimpedance Amplifier
Examples Characteristics
F0100404B
Gain (S21P) Ta=25 VDD=+5.0 VSS=GND, Pin=-50 dBm, RL=50 kHz-3
S21(dB)
f(Hz) 100M
Gain (S21N) Ta=25 VDD=+5.0 VSS=GND, Pin=-50 dBm, RL=50 kHz-3
S21(dB)
f(Hz) 100M
1.25Gb/s Transimpedance Amplifier
F0100404B
Input Noise Current Density Transimpedance
INPUT NOISE CURRENT DENSITY TRANSIMPEDANCE(Typical Vaiues) Freq. (MHz) 1000 Zt() transimpedance) Ini(pA/Hz) (Equivalent input noise currentdensity) 9.68 8.96 9.29 8.08 8.72 8.60 9.07 8.54 8.25 8.68 8.90 10.80 10.60 10.30 8.96
1.25Gb/s Transimpedance Amplifier
Typical Error Rate
F0100404B
DATA RATE: 1.25 Gb/s PRBS 223-1, Ta=25 VDD=+5.0 VSS=GND, RL=50
-1.2 -1.3 -1.4
3.0V 3.3V 3.6V
Error Ratio
-1.5 -1.6
-1.7 -1.8 -1.9
Optical Input Power (dBm)
1.25Gb/s Transimpedance Amplifier
General Description
F0100404B
transimpedance amplifier applied pre-amplifier which amplifier faint photo-current from photo diode (PD). performance terms sensitivity, bandwidth, obtained this transimpedance amplifier strongly depend capacitance brought input terminal; therefore, "typical", "minimum", "maximum" parameter descriptions always achieved according employed package, assembling design, other technical experts. This major reason that there product lineup packaged transimpedance amplifiers. Thus, optimum performance transimpedance amplifier, essential customers design input capacitance carefully. Hardness electro-magnetic interference fluctuation power supply voltage also important point design, because very faint photo-current flows into transimpedance amplifier. Therefore, assembly design interconnection between transimpedance, noise should taken into consideration.
Recommendation basically recommends series PINAMP modules customers transimpedance amplifiers. this module, transimpedance amplifier, noise filter circuit mounted TO-18-can package hermetically sealed lens cap, having typically fiber pigtail. series lineups best choice customers using series transimpedance amplifiers. SEI's series allows customers resolve troublesome design issues shorten development lead time.
Noise Performance F0100404B based GaAs FET's shows excellent low-noise characteristics compared with IC's based silicon bipolar process. Many transmission systems often demand superior signal-to-noise ratio, that high sensitivity; F0100404B best choice such applications. differential circuit configuration output enable complete differential operation reduce common mode noise: simple single ended output operation also available.
1.25Gb/s Transimpedance Amplifier
Die-Chip Description
F0100404B
F0100404B shipped like die-chip described above. thickness typically with available size uncovered passivation film square. material pads TiW/Pt/Au backside metalized Ti/Au.
Assembling Condition recommends assembling process shown below affirms sufficient wirepull die-shear strength. heating time minute temperature gave satisfactory results die-bonding with AuSn performs. heating ultrasonic wire-bonding temperature ball-bonding machine effective.
Quality Assurance series products, there only technically inevitable drawback terms quality assurance which impossible burn-in test screening owing dieshipment. will ship them customers agree this point. other hand, assurance test performed completely without problems according SEI's authorized rules. microscope inspection conducted conformance with MIL-STD883C Method 2010.7.
Precautions Owing their small dimensions, GaAs FET's from which F0100404B designed easily damaged destroyed subjected large transient voltages. Such transients generated power supplies when switched properly decoupled. also possible induce spikes from static-electricity-charged operations ungrounded equipment.
Electron Device Department

Features +3.3V +5.0 single power supply transimpedance load) Typical 2

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