CMOS SRAM 16Mb(1M bit) Power SRAM INFORMATION THIS DOCUMENT

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CMOS SRAM 16Mb(1M bit) Power SRAM INFORMATION THIS DOCUMENT

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K6F1616U6C Family
CMOS SRAM
16Mb(1M bit) Power SRAM
INFORMATION THIS DOCUMENT PROVIDED RELATION SAMSUNG PRODUCTS, SUBJECT CHANGE WITHOUT NOTICE. NOTHING THIS DOCUMENT SHALL CONSTRUED GRANTING LICENSE, EXPRESS IMPLIED, ESTOPPEL OTHERWISE, INTELLECTUAL PROPERTY RIGHTS SAMSUNG PRODUCTS TECHNOLOGY. INFORMATION THIS DOCUMENT PROVIDED BASIS WITHOUT GUARANTEE WARRANTY KIND.
updates additional information about Samsung products, contact your nearest Samsung office. Samsung products intended life support, critical care, medical, safety equipment, similar applications where Product failure could result loss life personal physical harm, military defense application, governmental procurement which special terms provisions apply.
Samsung Electronics reserves right change products specification without notice.
Revision 2005
K6F1616U6C Family
Document Title
Super Power Voltage Full CMOS Static
CMOS SRAM
Revision History
Revision History
Initial draft
Draft Date
November 2003
Remark
Preliminary
Finalize Revised Added Lead Free Products
March 2005 2005
Final Final
attached datasheets provided SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve right change specifications products. SAMSUNG Electronics will answer your questions about device. have questions, please contact SAMSUNG branch offices.
Revision 2005
K6F1616U6C Family
FEATURES
Process Technology: Full CMOS Organization: Power Supply Voltage: 2.7~3.3V Data Retention Voltage: 1.5V(Min) Three State Outputs Package Type: 48-FBGA 6.00x7.00
CMOS SRAM
GENERAL DESCRIPTION
K6F1616U6C families fabricated SAMSUNGs advanced full CMOS process technology. families support industrial operating temperature ranges. families also support data retention voltage battery back-up operation with data retention current.
Super Power Voltage Full CMOS Static
PRODUCT FAMILY
Power Dissipation Product Family K6F1616U6C-F Operating Temperature Industrial(-40~85°C) Range 2.7~3.3V Speed 551)/70ns Standby (ISB1, Typ.) 5µA2) Operating (ICC1, Max) Type 48-FBGA 6.00x7.00
parameter measured with 30pF test load. Typical value measured VCC=3.0V, TA=25°C 100% tested.
DESCRIPTION
FUNCTIONAL BLOCK DIAGRAM
gen. Precharge circuit.
I/O9
I/O1
I/O10
I/O11
I/O2
I/O3
Addresses
select
I/O12
I/O4
Memory Cell Array
I/O13
I/O5
Data cont Data cont Data cont Circuit Column select
I/O15
I/O14
I/O6
I/O7
I/O1~I/O8
I/O9~I/O16
I/O16
I/O8
Column Addresses
48-FBGA: View (Ball Down)
Name
Function
Name
Function Power Ground Upper Byte(I/O9~16) Lower Byte(I/O1~8) Connection
CS1, Chip Select Inputs A0~A19 Output Enable Input Write Enable Input Address Inputs
Control Logic
I/O1~I/O16 Data Inputs/Outputs
SAMSUNG ELECTRONICS CO., LTD. reserves right change products specifications without notice.
Revision 2005
K6F1616U6C Family
PRODUCT LIST
Industrial Temperature Products(-40~85°C) Part Name K6F1616U6C-FF55 K6F1616U6C-XF55 K6F1616U6C-FF70 K6F1616U6C-XF70
Lead Free Product
CMOS SRAM
Function 48-FBGA, 55ns, 3.0V 48-FBGA, 55ns, 3.0V, LF1) 48-FBGA, 70ns, 3.0V 48-FBGA, 70ns, 3.0V, LF1)
FUNCTIONAL DESCRIPTION
I/O1~8 High-Z High-Z High-Z High-Z High-Z Dout High-Z Dout High-Z
I/O9~16 High-Z High-Z High-Z High-Z High-Z High-Z Dout Dout High-Z
Mode Deselected Deselected Deselected Output Disabled Output Disabled Lower Byte Read Upper Byte Read Word Read Lower Byte Write Upper Byte Write Word Write
Power Standby Standby Standby Active Active Active Active Active Active Active Active
means dont care. (Must high state)
ABSOLUTE MAXIMUM RATINGS1)
Item Voltage relative Voltage supply relative Power Dissipation Storage temperature Operating Temperature Symbol VIN,VOUT TSTG Ratings -0.2 VCC+0.3V(Max. 3.6V) -0.2 Unit
Stresses greater than those listed under "Absolute Maximum Ratings" cause permanent damage device. Functional operation should restricted recommended operating condition. Exposure absolute maximum rating conditions extended periods affect reliability.
Revision 2005
K6F1616U6C Family
RECOMMENDED OPERATING CONDITIONS1)
Item Supply voltage Ground Input high voltage Input voltage Symbol -0.23)
CMOS SRAM
Vcc+0.22) Unit
Note: TA=-40 85°C, otherwise specified Overshoot: VCC+2.0V case pulse width 20ns. Undershoot: -2.0V case pulse width 20ns. Overshoot Undershoot sampled, 100% tested.
CAPACITANCE1) (f=1MHz, TA=25°C)
Item Input capacitance Input/Output capacitance
Capacitance sampled, 100% tested
Symbol
Test Condition VIN=0V VIO=0V
Unit
OPERATING CHARACTERISTICS
Item Input leakage current Output leakage current
Symbol
Test Conditions VIN=Vss CS1=VIH CS2=VIL OE=VIH WE=VIL LB=UB=VIH, VIO=Vss Cycle time=1µs, 100%duty, IIO=0mA, CS10.2V, LB0.2V or/and UB0.2V, CS2Vcc-0.2V, VIN0.2V VINVCC-0.2V Cycle time=Min, IIO=0mA, 100% duty, CS1=VIL, CS2=VIH, LB=VIL or/and UB=VIL, VIN=VIL 2.1mA -1.0mA Other input =0~Vcc CS1Vcc-0.2V, CS2Vcc-0.2V(CS1 controlled) 0VCS20.2V(CS2 controlled) 70ns 55ns
Typ1)
Unit
ICC1
Average operating current ICC2 Output voltage Output high voltage Standby Current (CMOS) ISB1
Typical values measured VCC=3.0V, TA=25°C 100% tested.
Revision 2005
K6F1616U6C Family
OPERATING CONDITIONS
TEST CONDITIONS(Test Load Input/Output Reference)
Input pulse level: 0.2V Vcc-0.2V Input rising falling time: Input output reference voltage:1.5V Output load(see right): CL=100pF+1TTL CL=30pF+1TTL
CMOS SRAM
VTM3) R12)
CL1)
R22)
Including scope capacitance R1=3070, R2=3150 V=2.8V
CHARACTERISTICS (Vcc=2.7~3.3V, TA=-40 85°C)
Speed Bins Parameter List Symbol Read cycle time Address access time Chip select output Output enable valid output valid data output Read Chip select low-Z output Output enable low-Z output enable low-Z output Output hold from address change Chip disable high-Z output disable high-Z output disable high-Z output Write cycle time Chip select write Address set-up time Address valid write Write pulse width Write Write recovery time Write output high-Z Data write time overlap Data hold from write time write output low-Z valid write tOLZ tBLZ tOHZ tBHZ tWHZ 55ns 70ns Units
DATA RETENTION CHARACTERISTICS
Item data retention Data retention current Data retention set-up time Recovery time Symbol tSDR tRDR Test Condition CS1Vcc-0.2V VIN0V
Unit
Vcc=1.5V, CS1Vcc-0.2V VIN0V
data retention waveform
CS1Vcc-0.2V, CS2Vcc-0.2V(CS1 controlled) 0CS20.2V(CS2 controlled) Typical value measured TA=25°C 100% tested.
Revision 2005
K6F1616U6C Family
TIMING DIAGRAMS
CMOS SRAM
TIMING WAVEFORM READ CYCLE(1) (Address Controlled, CS1=OE=VIL, CS2=WE=VIH, or/and LB=VIL)
Address Data Previous Data Valid Data Valid
TIMING WAVEFORM READ CYCLE(2) (WE=VIH)
Address
tBHZ tOLZ tBLZ Data Valid tOHZ
Data
High-Z
NOTES (READ CYCLE) tOHZ defined time which outputs achieve open circuit conditions referenced output voltage levels. given temperature voltage condition, tHZ(Max.) less than tLZ(Min.) both given device from device device interconnection.
Revision 2005
K6F1616U6C Family
TIMING WAVEFORM WRITE CYCLE(1) Controlled)
Address tCW(2) tWR(4)
CMOS SRAM
tWP(1) tAS(3) Data High-Z tWHZ Data Data Undefined Data Valid High-Z
TIMING WAVEFORM WRITE CYCLE(2) (CS1 Controlled)
Address tAS(3) tWP(1) Data Data Valid tCW(2) tWR(4)
Data
High-Z
High-Z
Revision 2005
K6F1616U6C Family
TIMING WAVEFORM WRITE CYCLE(3) (UB, Controlled)
Address tCW(2) tAS(3) tWP(1) Data Data Valid tWR(4)
CMOS SRAM
Data
NOTES (WRITE CYCLE)
High-Z
High-Z
write occurs during overlap(tWP) write begins when goes goes with asserting single byte operation simultaneously asserting double byte operation. write ends earliest transition when goes high goes high. measured from beginning write write. measured from going write. measured from address valid beginning write. measured from write address change. applied case write ends with going high.
DATA RETENTION WAVEFORM
controlled
2.7V tSDR Data Retention Mode tRDR
2.2V CS1VCC 0.2V
controlled
2.7V tSDR
Data Retention Mode
tRDR
0.4V CS20.2V
Revision 2005
K6F1616U6C Family
PACKAGE DIMENSION
BALL FINE PITCH BGA(0.75mm ball pitch)
View Bottom View
CMOS SRAM
Unit: millimeters
Detail Notes. Bump counts: 48(8 column) Bump pitch: (x,y)=(0.75 0.75)(typ.) tolerance ±0.050 unless specified beside figure. Typ: Typical coplanarity: 0.10(Max)
Side View
5.90 6.90 0.40 0.25
0.75 6.00 3.75 7.00 5.25 0.45
6.10 7.10 0.50 1.00 0.10
Revision 2005

CMOS SRAM 16Mb(1M bit) Power SRAM INFORMATION THIS DOCUMENT

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