Dual N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY rDS(on)

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Dual N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY rDS(on)

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Si6926ADQ
Dual N-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
rDS(on)
0.030 0.033 0.035 0.043
TSSOP-8
View Ordering Information: Si6926ADQ-T1-E3 (Lead Free) N-Channel MOSFET N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 150_C)a Pulsed Drain Current Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction Storage Temperature Range 25_C 70_C 25_C 70_C
Symbol
Tstg
secs
0.83 0.64
Steady State
Unit
0.69 0.83 0.53
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes Surface Mounted Board, sec. SPICE model information Worldwide Web: Document Number: 72754 S-40230-Rev. 16-Feb-04 www.vishay.com Steady State Steady State
Symbol
RthJA RthJF
Typical
Maximum
Unit
_C/W
Si6926ADQ
SPECIFICATIONS 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb VGS(th) IGSS IDSS ID(on) VGS, 55_C Drain-Source On-State Resistanceb rDS(on) Forward Transconductanceb Diode Forward Voltageb 0.83 0.024 0.026 0.029 0.035 0.030 0.033 0.035 0.043 0.40 "100
Symbol
Test Condition
Typa
Unit
Dynamica
Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time td(on) td(off) 0.83 di/dt A/ms VGEN 10.5
Notes Guaranteed design, subject production testing. Pulse test; pulse width duty cycle
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
thru Drain Current Drain Current
Transfer Characteristics
125_C 25_C -55_C 1.00 1.25 1.50 1.75 2.00
Drain-to-Source Voltage www.vishay.com
0.00
0.25
0.50
0.75
Gate-to-Source Voltage Document Number: 72754 S-40230-Rev. 16-Feb-04
Si6926ADQ
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance Drain Current
0.05 DS(on) On-Resistance 1200 1000 0.03 Capacitance (pF) 12.0 16.0 20.0 Crss Coss
Capacitance
0.04
Ciss
0.02
0.01
0.00
Drain Current
Drain-to-Source Voltage
Gate Charge
Gate-to-Source Voltage Total Gate Charge (nC) rDS(on) On-Resiistance (Normalized)
On-Resistance Junction Temperature
Junction Temperature (_C)
Source-Drain Diode Forward Voltage
0.08 0.07 DS(on) On-Resistance Source Current 150_C 0.06 0.05 0.04 0.03 0.02 0.01 0.00
On-Resistance Gate-to-Source Voltage
25_C
Source-to-Drain Voltage
Gate-to-Source Voltage
Document Number: 72754 S-40230-Rev. 16-Feb-04
www.vishay.com
Si6926ADQ
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
GS(th) Variance -0.0 Power -0.1 -0.2 -0.3 -0.4
Single Pulse Power, Junction-to-Ambient
10-3
10-2
10-1
Temperature (_C)
Time (sec)
Safe Operating Area, Junction-to-Case
Limited rDS(on) Limited
Drain Current ID(on) Limited 25_C Single Pulse BVDSS Limited
0.01
Drain-to-Source Voltage
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient Thermal Impedance
Duty Cycle
0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (sec) 10-1
Notes:
Duty Cycle,
Unit Base RthJA 126_C/W PDMZthJA(t) Surface Mounted
www.vishay.com
Document Number: 72754 S-40230-Rev. 16-Feb-04
Si6926ADQ
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
Normalized Effective Transient Thermal Impedance
Duty Cycle
0.05 0.02
0.01 10-4
Single Pulse 10-3 10-2 10-1 Square Wave Pulse Duration (sec)
Document Number: 72754 S-40230-Rev. 16-Feb-04
www.vishay.com

Dual N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY rDS(on)

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