MC74HC1G02 high-speed CMOS 2-input gate fabricated with silicon gate C

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MC74HC1G02 high-speed CMOS 2-input gate fabricated with silicon gate C

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MC74HC1G02 Single 2-Input Gate
MC74HC1G02 high-speed CMOS 2-input gate fabricated with silicon gate CMOS technology. internal circuit composed multiple stages, including buffer output which provides high noise immunity stable output. MC74HC1G02 output drive current compared MC74HC series.
High Speed: (Typ) Power Dissipation: (Max) 25_C High Noise Immunity Balanced Propagation Delays (tPLH tPHL) Symmetrical Output Impedance (IOH Chip Complexity: Pb-Free Packages Available
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SC70-5/SC-88A/SOT-353 SUFFIX CASE 419A
SOT23-5/TSOP-5/SC59-5 SUFFIX CASE Date Code Month Code
Figure Pinout (Top View) ASSIGNMENT
Figure Logic Symbol
FUNCTION TABLE
Inputs Output
ORDERING INFORMATION
detailed ordering shipping information package dimensions section page this data sheet.
Semiconductor Components Industries, LLC, 2005
January, 2005 Rev.
Publication Order Number: MC74HC1G02/D
MC74HC1G02
MAXIMUM RATINGS
Symbol VOUT IOUT TSTG VESD Supply Voltage Input Voltage Output Voltage Input Diode Current Output Diode Current Output Sink Current Supply Current Supply Storage Temperature Range Lead Temperature, from Case Seconds Junction Temperature Under Bias Thermal Resistance Power Dissipation Still 85_C Moisture Sensitivity Flammability Rating Withstand Voltage Oxygen Index: Human Body Model (Note Machine Model (Note Charged Device Model (Note Above Below 125_C (Note SC70-5/SC-88A (Note TSOP-5 SC70-5/SC-88A TSOP-5 Parameter Value *0.5 )7.0 *0.5 )0.5 *0.5 )0.5 $12.5 )150 )150 Level 0.125 u2000 u200 $500 Unit _C/W
ILATCHUP
Latchup Performance
Maximum ratings those values beyond which device damage occur. Maximum ratings applied device individual stress limit values (not normal operating conditions) valid simultaneously. these limits exceeded, device functional operation implied, damage occur reliability affected. Measured with minimum spacing board, using mm-by-1 inch, ounce copper trace with flow. Tested EIA/JESD22-A114-A. Tested EIA/JESD22-A115-A. Tested JESD22-C101-A. Tested EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol VOUT Supply Voltage Input Voltage Output Voltage Operating Temperature Range Input Rise Fall Time NORMALIZED FAILURE RATE Parameter )125 1000 Unit
DEVICE JUNCTION TEMPERATURE VERSUS TIME 0.1% BOND FAILURES
Junction Temperature Time, Hours 1,032,200 419,300 178,700 79,600 37,000 17,800 8,900 Time, Years 117.8 47.9 20.4
FAILURE RATE PLASTIC CERAMIC UNTIL INTERMETALLICS OCCUR 130_C 120_C 100_C 110_C 90_C 80_C TIME, YEARS
1000
Figure Failure Rate Time Junction Temperature
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MC74HC1G02
ELECTRICAL CHARACTERISTICS
Symbol Parameter Minimum High-Level Input Voltage Test Conditions 4.18 5.68 4.31 5.80 0.17 0.18 0.26 0.26 $0.1 3.15 4.20 1.35 1.80 4.13 5.63 0.33 0.33 $1.0 25_C 85_C 3.15 4.20 1.35 1.80 4.08 5.58 0.40 0.40 $1.0 *55_C 125_C 3.15 4.20 1.35 1.80 Unit
Maximum Low-Level Input Voltage
Minimum High-Level Output Voltage
-2.6 Maximum Low-Level Output Voltage
Maximum Input Leakage Current Maximum Quiescent Supply Current
ELECTRICAL CHARACTERISTICS (Input
25_C Symbol tPLH, tPHL Parameter Maximum Propagation Delay Delay, Input Test Conditions 85_C *55_C 125_C Unit
10.5 tTLH, tTHL Output Transition Time Maximum Input Capacitance Typical 25_C, Power Dissipation Capacitance (Note defined value internal equivalent capacitance which calculated from operating current consumption without load. Average operating current obtained equation: ICC(OPR) ICC. used determine no-load dynamic power consumption; VCC2 VCC.
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MC74HC1G02
INPUT tPLH tTLH tTHL *Includes probe capacitance. 1-MHz square input wave recommended propagation delay tests. tPHL INPUT OUTPUT
OUTPUT
Figure Switching Waveforms
Figure Test Circuit
DEVICE ORDERING INFORMATION
Device Nomenclature Device Order Number MC74HC1G02DFT1 MC74HC1G02DFT1G Logic Circuit Indicator Temp Range Identifier Device Function Package Suffix Tape Reel Suffix Package Type SC70-5/SC-88A/ SOT-353 SC70-5/SC-88A/ SOT-353 (Pb-Free) SC70-5/SC-88A/ SOT-353 SC70-5/SC-88A/ SOT-353 (Pb-Free) SOT23-5/TSOP-5/ SC59-5 SOT23-5/TSOP-5/ SC59-5 (Pb-Free) Tape Reel Size 3000 Unit 3000 Unit 3000 Unit 3000 Unit 3000 Unit 3000 Unit
Technology HC1G HC1G
MC74HC1G02DFT2 MC74HC1G02DFT2G
HC1G HC1G
MC74HC1G02DTT1 MC74HC1G02DTT1G
HC1G HC1G
information tape reel specifications, including part orientation tape sizes, please refer Tape Reel Packaging Specifications Brochure, BRD8011/D.
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MC74HC1G02
PACKAGE DIMENSIONS
SC70-5/SC-88A/SOT-353 SUFFIX 5-LEAD PACKAGE CASE 419A-02 ISSUE
NOTES: DIMENSIONING TOLERANCING ANSI Y14.5M, 1982. CONTROLLING DIMENSION: INCH. 419A-01 OBSOLETE. STANDARD 419A-02. DIMENSIONS INCLUDE MOLD FLASH, PROTRUSIONS, GATE BURRS. INCHES 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 0.004 0.004 0.010 0.004 0.012 0.008 0.079 0.087 MILLIMETERS 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 0.10 0.10 0.25 0.10 0.30 0.20 2.00 2.20
(0.008)
SOLDERING FOOTPRINT*
0.50 0.0197
0.65 0.025 0.65 0.025 0.40 0.0157
0.0748
SCALE 20:1
inches
*For additional information Pb-Free strategy soldering details, please download Semiconductor Soldering Mounting Techniques Reference Manual, SOLDERRM/D.
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MC74HC1G02
PACKAGE DIMENSIONS
SOT23-5/TSOP-5/SC59-5 SUFFIX 5-LEAD PACKAGE CASE 483-02 ISSUE
NOTES: DIMENSIONING TOLERANCING ANSI Y14.5M, 1982. CONTROLLING DIMENSION: MILLIMETER. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS MINIMUM THICKNESS BASE MATERIAL. DIMENSIONS INCLUDE MOLD FLASH, PROTRUSIONS, GATE BURRS. MILLIMETERS 2.90 3.10 1.30 1.70 0.90 1.10 0.25 0.50 0.85 1.05 0.013 0.100 0.10 0.26 0.20 0.60 1.25 1.55 2.50 3.00 INCHES 0.1142 0.1220 0.0512 0.0669 0.0354 0.0433 0.0098 0.0197 0.0335 0.0413 0.0005 0.0040 0.0040 0.0102 0.0079 0.0236 0.0493 0.0610 0.0985 0.1181
0.05 (0.002)
SOLDERING FOOTPRINT*
0.074
0.95 0.037
0.094 0.039 0.028
SCALE 10:1
inches
*For additional information Pb-Free strategy soldering details, please download Semiconductor Soldering Mounting Techniques Reference Manual, SOLDERRM/D.
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PUBLICATION ORDERING INFORMATION
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MC74HC1G02/D

MC74HC1G02 high-speed CMOS 2-input gate fabricated with silicon gate C

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