FLASH-ROM MODULE 16MByte 16-Bit) Memory Stack Type Part HMF8M16F8V-

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FLASH-ROM MODULE 16MByte 16-Bit) Memory Stack Type Part HMF8M16F8V-

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HMF8M16F8V-90
FLASH-ROM MODULE 16MByte 16-Bit) Memory Stack Type Part HMF8M16F8V-
HMF8M16F8V high-speed flash read only memory (FROM) module containing 8,388,608 words organized x16bit configuration. module consists eight FROM mounted 100-pin, connector FR4-printed circuit board. Commands written command register using standard microprocessor write timings. Register contents serve input internal state-machine, which controls erase programming circuitry. Write cycles also internally latch addresses data needed programming erase operations. Reading data device similar reading from 12.0V flash EPROM devices. Output enable (/OE) write enable (/WE) memory input output. host system detect program erase operation complete observing Ready Pin, reading DQ7(Data Polling) DQ6(Toggle) status bits. When FROM module disable condition module becoming power standby mode, system designer low-power design. module components powered from single power supply inputs outputs LVTTLcompatible.
FEATURES
Part identification HMF8M16F8V(Bottom boot block configuration)
DQ15 DQ14 DQ13 DQ12 DQ11 DQ10
ASSIGNMENT
/WE0 /WE1 Ready /Reset
Access time: 120ns High-density 16MByte design High-reliability, low-power design Single 3.6V power supply 100-Pin Designed 50-Pin Fine Pitch Connector P1,P2 Minimum 1,000,000 write cycle guarantee sector 20-year data retention Flexible sector architecture Embedded algorithms Erase suspend Erase resume
OPTIONS
Timing 70ns access 80ns access 90ns access 120ns access Packages 100-pin
MARKING
-120
50-PIN Connector
50-PIN Connector
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
FUNCTIONAL BLOCK DIAGRAM
A0-20 D0-15
HMF8M16F8V-90
D0-7
D8-15
/Bank0
/Reset /RY-BY
/Reset /RY-BY
/Bank1 /Reset /RY-BY
/Reset /RY-BY
/Bank2
/Reset /RY-BY
/Reset /RY-BY
/Bank3 /WE0 /Reset /Ry-By /WE1
/Reset /RY-BY
/Reset /RY-BY
Decoder /Bank0 /Bank1 /Bank2 /Bank3
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
TRUTH TABLE
MODE STANDBY RESET SECTOR PROTECT SECTOR UNPROTECT READ WRITE Vcc±0.3V RESET Vcc±0.3V
HMF8M16F8V-90
HIGH-Z HIGH-Z DIN, DOUT DIN, DOUT DOUT DOUT
Note means don't care, WE0* byte (D0~7) Write enable, WE1* High byte(D8~15) Write enable.
ABSOLUTE MAXIMUM RATINGS
PARAMETER Voltage Relative Voltage Supply Relative Output Short Circuit Current Storage Temperature RATING -0.5V +0.5V -0.5V +4.0V 1,600mA -65oC +150oC
Operating Temperature -0oC +70oC Stresses greater than those listed under Absolute Maximum Ratings" cause permanent damage device. This stress rating only functional operation device these other conditions above those indicated operating section this specification implied. Exposure absolute maximum rating conditions extended periods affect reliability.
RECOMMENDED OPERATING CONDITIONS
PARAMETER regulated Supply Voltage full voltage RANGE +3.0V 3.6V +2.7V 3.6V
OPERATING CHARACTERISTICS
PARAMETER Input Load Current Output Leakage Current Output High Voltage Output Voltage Active Read Current
URL: www.hbe.co.kr REV.02(August,2002)
TEST CONDITIONS VIN= VCC= VOUT= VCC, VCC= -2.0mA, 4.0mA, VIL, ,/OE=VIH, f=5MHz
SYMBOL ICC1
±8.0 ±8.0
UNITS
0.85Vcc 0.45
HANBit Electronics Co., Ltd.
Active Write Current Standby Current Reset Current Lock-Out Voltage VIL, /OE=VIH /CE, RESET=VCC±0.3V /RESET=Vss±0.3V, ICC2 ICC3 ICC4 VLKO
HMF8M16F8V-90
ERASE PROGRAMMING PERFORMANCE
LIMITS PARAMETER MIN. Sector Erase Time TYP. MAX. Excludes programming prior erasure Byte Programming Time Excludes system-level overhead Excludes system-level Chip Programming Time overhead UNIT COMMENTS
TSOP CAPACITANCE
PARAMETER SYMBOL Capacitance COUT CIN2 Output Capacitance Control Capacitance Data VOUT PARAMETER TEST SETUP DESCRIPTION Input Address TYP. UNIT
Notes: Test conditions f=1.0 MHz.
CHARACTERISTICS Read Only Operations Characteristics
PARAMETER SYMBOLS JEDEC tAVAV tAVQV STANDARD tACC Address Output Delay Read Cycle Time DESCRIPTION TEST SETUP (NOTE1) (NOTE1) UNIT
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
tELQV tGLQV tEHQZ tGHQZ tAXQX /OE, Whichever Occurs First Chip Enable Output Delay Chip Enable Output Delay Chip Enable Output High-Z Output Enable Output High-Z Output Hold Time From Addresses,
HMF8M16F8V-90
TEST CONDITIONS
Notes Test Conditions Output Load 1TTL gate Input rise fall times Input pulse levels: 3.0V Timing measurement reference level Input Output 1.5V
3.3V
2.7k Device Under Test IN3064 Equivalent
6.2k
Diodes IN3064 Equivalent
Note 100pF including capacitance
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
Erase/Program Operations
PARAMETER SYMBOLS DESCRIPTION JEDEC tAVAV tAVWL tWLAX tDVWH tWHDX STANDARD tOES tGHWL tELWL tWHEH tWLWH tWHWL tWHWH1 tWHWH2 tGHWL tWPH tWHWH1 tWHWH2 tVCS tBUSY Write Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write Setup Time Hold Time Write Pulse Width Write Pulse Width High Byte Programming Operation Sector Erase Operation Setup Time Recovery time from RY/BY Program/Erase Valid RY/BY Delay
HMF8M16F8V-90
UNIT
Alternate Controlled Erase/Program Operations
PARAMETER SYMBOLS DESCRIPTION JEDEC tAVAV tAVEL tELAX tDVEH tEHDX STANDARD tOES tGHEL tWLEL tEHWH tGHEL High Setup Time Hold Time Write Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write UNIT
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
tELEH tEHEL tWHWH1 tWHWH2 tCPH tWHWH1 tWHWH2 Pulse Width Pulse Width High Byte Programming Operation Sector Erase Operation
HMF8M16F8V-90
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
READ OPERATIONS TIMING
HMF8M16F8V-90
RESET TIMING
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
PROGRAM OPERATIONS TIMING
HMF8M16F8V-90
CHIP/SECTOR ERASE OPERATION TIMINGS
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS)
HMF8M16F8V-90
TOGGLE# TIMINGS (DURING EMBEDDED ALGORITHMS)
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
SECTOR PROTECT UNPROTECT TIMEING DIAGRAM
HMF8M16F8V-90
ALTERNATE CONTROLLED WRITE OPERATING TIMINGS
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
PACKAGE DIMMENSIONS
UNIT: (TOP Dimension)
HMF8M16F8V-90
1.20
3.25 5.00
Main Board
-Connector
Part HMF8M16F8V-90 Top: 50-pin 0.6mm Pitch Free Height Plugs, Part 316076-3 Bottom: 50-pin 0.6mm Pitch Free Height Receptacles, Part 316077-3
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
ORDERING INFORMATION
Component Number
HMF8M16F8V-90
Part Number
Density
Org.
Package
SPEED
HMF8M16F8V-90
16MByte
16bit
Pin-SMM
3.3V
90ns
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.

FLASH-ROM MODULE 16MByte 16-Bit) Memory Stack Type Part HMF8M16F8V-

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