Flash-ROM Module 8MByte (2Mx32Bit), 72Pin-SO-DIMM, 3.3V Design Part HM

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Flash-ROM Module 8MByte (2Mx32Bit), 72Pin-SO-DIMM, 3.3V Design Part HM

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HMF2M32B4V
Flash-ROM Module 8MByte (2Mx32Bit), 72Pin-SO-DIMM, 3.3V Design Part HMF2M32B4V GENERAL DESCRIPTION
HMF2M32B4V high-speed flash read only memory (FROM) module containing 4,194,304 words organized x32bit configuration. module consists four FROM mounted 72-pin SO-DIMM type, single sided, FR4printed circuit board. Commands written command register using standard microprocessor write timings. Register contents serve input internal state-machine, which controls erase programming circuitry. Write cycles also internally latch addresses data needed programming erase operations. Reading data device similar reading from 12.0V flash EPROM devices. Output enable (/OE) write enable (/WE) memory input output. host system detect program erase operation complete observing Ready Pin, reading DQ7(Data Polling) DQ6(Toggle) status bits. When FROM module disable condition module becoming power standby mode, system designer low-power design. module components powered from single 3.0V power supply inputs outputs LVTTLcompatible.
FEATURES
Access time: 120ns High-density 8MByte design High-reliability, low-power design Single 3.0V 0.5V power supply in/outputs LVTTL-compatible FR4-PCB design Minimum 1,000,000 write/erase cycle Sector erases architecture Symbol /RESET /CE_1L /CE_2L DQ10 DQ11 DQ12 DQ13 DQ14
ASSIGNMENT
Symbol DQ15 (/CE_4L) (/CE_3H) DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 /CE_1H /CE_2H DQ24 DQ25 DQ26 DQ27 DQ28 Symbol DQ29 DQ30 DQ31 (/CE_4H) (/CE_3H) Symbol
OPTIONS
Timing 70ns access 80ns access 90ns access 120ns access Packages 72-pin SO-DIMM
MARKING
-120
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FUNCTIONAL BLOCK DIAGRAM
HMF2M32B4V
DQ31 A0-19 0-15
/CE_IL RY-BY /Reset
A0-19 15-31 /CE_IH
RY-BY /Reset
A0-19 0-15 /CE_2L RY-BY /Reset
A0-19 15-31 /CE_2H /RY_BY /RESET RY-BY /Reset
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TRUTH TABLE
MODE STANDBY SELECTED READ WRITE ERASE NOTE: means don't care /RESET Vcc±0.3V
HMF2M32B4V
/BYTE=L HIGH-Z HIGH-Z DOUT
POWER STANDBY ACTIVE ACTIVE ACTIVE
ABSOLUTE MAXIMUM RATINGS
PARAMETER Voltage with respect ground other pins Voltage with respect ground Storage Temperature SYMBOL VIN,OUT TSTG RATING -0.5V Vcc+0.5V -0.5V +4.0V -65oC +150oC
Operating Temperature -55oC +125 Stresses greater than those listed under Absolute Maximum Ratings" cause permanent damage device. This stress rating only functional operation device these other conditions above those indicated operating section this specification mplied. Exposure absolute maximum rating conditions extended periods affect reliability.
RECOMMENDED OPERATING CONDITIONS
PARAMETER device Supply Voltages Ground SYMBOL 2.7V TYP. 3.6V
OPERATING CHARACTERISTICS
PARAMETER Input Load Current Output Leakage Current Output High Voltage Output Voltage Active Read Current VIH, Active Write Current Standby Current Lock-Out Voltage Notes: current listed typically less than 2mA/MHz, with active while embedded algorithm (program erase) progress Maximum current specifications tested with Vcc=Vcc VIL, /OE=VIH /CE, /RESET=Vcc±0.3V 1MHZ ICC2 ICC3 VLKO TEST CONDITIONS Vcc=Vcc max, Vcc=Vcc max, OUT= -2.0mA, 4.0mA, =Vcc VIL, 5MHZ ICC1 SYMBOL 0.45 ±1.0 ±1.0 UNIT
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ERASE PROGRAMMING PERFORMANCE
PARAMETER MIN. Sector Erase Time Chip Erase Time Byte Programming Time Chip Programming Time LIMITS TYP. MAX. UNIT
HMF2M32B4V
COMMENTS Excludes programming prior erasure Excludes system-level overhead
TSOP CAPACITANCE
PARAMETER SYMBOL COUT CIN2 PARAMETER DESCRIPTION Input Capacitance Output Capacitance Control Capacitance TEST SETUP VOUT UNIT
Notes Test conditions f=1.0 MHz.
CHARACTERISTICS Read Only Operations Characteristics
PARAMETER SYMBOLS DESCRIPTION JEDEC STANDARD tAVAV tAVQV tELQV tGLQV tEHQZ tGHQZ tAXQX tACC Read Cycle Time Address Output Delay Chip Enable Output Delay Chip Enable Output Delay Chip Enable Output High-Z Output Enable Output High-Z Output Hold Time From Addresses, /OE, Whichever Occurs First TEST SETUP -70R -120 Speed Options UNIT
TEST SPECIFICATIONS
TEST CONDITION Output load Output load capacitance,CL (Including capacitance) Input rise full times Input pulse levels Input timing measurement reference levels Output timing measurement reference levels 0.0-3.0 70R, 1TTL gate UNIT
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5.0V
HMF2M32B4V
2.7k Device Under Test IN3064 Equivalent
6.2k
Diodes IN3064 Equivalent
Note 100pF including capacitance
Erase/Program Operations
PARAMETER SYMBOLS DESCRIPTION JEDEC tAVAV tAVWL tWLAX tDVWH tWHDX STANDARD tOES tGHWL tELWL tWHEH tWLWH tWHWL tWHWH1 tWHWH2 tGHWL tWPH tWHWH1 tWHWH2 tVCS Write Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write Setup Time Hold Time Write Pulse Width Write Pulse Width High Byte Programming Operation Sector Erase Operation (Note1) time Speed Options UNIT
Notes This does include preprogramming time This timing only Sector Protect operations
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Erase/Program Operations Alternate Controlled Writes
PARAMETER SYMBOLS DESCRIPTION JEDEC tAVAV tAVWL tWLAX tDVWH tWHDX STANDARD tOES tGHWL tELWL tWHEH tWLWH tWHWL tWHWH1 tWHWH2 tGHWL tWPH tWHWH1 tWHWH2 Write Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write Setup Time Hold Time Write Pulse Width Write Pulse Width High Byte Programming Operation Sector Erase Operation (Note1) -70R
HMF2M32B4V
Speed Options UNIT
Notes This does include preprogramming This timing only Sector Protect operations
READ OPERATIONS TIMING
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HANBit Electronics Co., Ltd.
RESET TIMING
HMF2M32B4V
PROGRAM OPERATIONS TIMING Alternate Controlled Writes
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Alternate Controlled Writes
HMF2M32B4V
CHIP/BLOCK ERASE OPERATION TIMINGS
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HMF2M32B4V
DATA# POLLING TIMES DURING INTERNAL ROUTINE OPERATION
TIMEING DURING ERASE PROGRAM OPERATION
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TOGGLE# DURING INTERNAL ROUTINE OPERATION
HMF2M32B4V
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HANBit PACKAGE DIMENSIONS
<TOP VIEW>
HMF2M32B4V
0.1mm
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HANBit Electronics Co., Ltd.
ORDERING INFORMATION
Component Number
HMF2M32B4V
Part Number
Density
Org.
Package
SPEED
HMF2M32B4V-70 HMF2M32B4V-80 HMF2M32B4V-90 HMF2M32B4V-120
8MByte 8MByte 8MByte 8MByte
72Pin SODIMM 72Pin SODIMM 72Pin SODIMM 72Pin SODIMM
3.3V 3.3V 3.3V 3.3V
70ns 80ns 90ns 120ns
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HANBit Electronics Co., Ltd.

Flash-ROM Module 8MByte (2Mx32Bit), 72Pin-SO-DIMM, 3.3V Design Part HM

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