AO4609 uses advanced trench technology MOSFETs provide excellent RDS(O
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AO4609 Complementary Enhancement Mode Field Effect Transistor
AO4609 uses advanced trench technology MOSFETs provide excellent RDS(ON) gate charge. complementary MOSFETs used form level shifted high side switch, host other applications.
Features
n-channel p-channel -30V 8.5A RDS(ON) RDS(ON) (VGS=10V) 130m (VGS 10V) (VGS=4.5V) 180m (VGS 4.5V) 260m (VGS 2.5V)
SOIC-8
n-channel
p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter n-channel Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation
p-channel -2.4 1.28
Units
TA=25°C TA=70°C TA=25°C TA=70°C TSTG
1.28
Junction Storage Temperature Range
Thermal Characteristics: n-channel p-channel Parameter Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Lead Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Lead
Symbol
Device n-ch n-ch n-ch p-ch p-ch p-ch
62.5
Units °C/W °C/W °C/W
62.5 °C/W °C/W °C/W
AO4609
N-Channel Electrical Characteristics =25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=6A Forward Transconductance VDS=5V, ID=8.5A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=8.5A TJ=125°C 15.5 22.3 0.75 1040 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 19.2 VGS=10V, VDS=15V, ID=8.5A 9.36 17.3 16.7 Units
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Gate Source Charge Gate Drain Charge tD(on) tD(off) Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time
VGS=10V, VDS=15V, RL=1.8, RGEN=3
IF=8.5A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=8.5A, dI/dt=100A/µs
value measured with device mounted 1in2 FR-4 board with 2oz. Copper, still environment with TA=25°C. value given application depends user's specific board design. current rating based thermal resistance rating. Repetitive rating, pulse width limited junction temperature. thermal impedence from junction lead lead ambient. static characteristics Figures obtained using pulses, duty cycle 0.5% max. These tests performed with device mounted FR-4 board with 2oz. Copper, still environment with TA=25°C. curve provides single pulse rating.
Alpha Omega Semiconductor, Ltd.
AO4609
P-Channel Electrical Characteristics =25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current Conditions ID=-250µA, VGS=0V VDS=-24V, VGS=0V TJ=55°C VDS=0V, VGS=±12V VDS=VGS ID=-250µA VGS=-4.5V, VDS=-5V VGS=-10V, ID=-3A Static Drain-Source On-Resistance TJ=125°C VGS=-4.5V, ID=-2A VGS=-2.5V, ID=-1A VDS=-5V, ID=-3A -0.6 -0.85 ±100 -1.4 Units
Forward Transconductance Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance Gate resistance VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
1.32 31.5 15.8
SWITCHING PARAMETERS Total Gate Charge Gate Source Charge Gate Drain Charge tD(on) tD(off) Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time
VGS=-4.5V, VDS=-15V, ID=-3A
VGS=-10V, VDS=-15V, RL=5, RGEN=3
IF=-3A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-3A, dI/dt=100A/µs
value measured with device mounted 1in2 FR-4 board with 2oz. Copper, still environment with =25°C. value given application depends user's specific board design. current rating based thermal resistance rating. Repetitive rating, pulse width limited junction temperature. thermal impedence from junction lead lead ambient. static characteristics Figures 6,12,14 obtained using pulses, duty cycle 0.5% max. These tests performed with device mounted FR-4 board with 2oz. Copper, still environment with TA=25°C. curve provides single pulse rating.
Alpha Omega Semiconductor, Ltd.
AO4609
N-CHANNEL: TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
(Volts) On-Region Characteristics Normalized On-Resistance RDS(ON) Figure On-Resistance Drain Current Gate Voltage 1.0E+01 1.0E+00 RDS(ON) ID=8.5A 1.0E-01 125°C 1.0E-02 25°C 1.0E-03 25°C 1.0E-04 1.0E-05 (Volts) Figure On-Resistance Gate-Source Voltage (Volts) Figure Body-Diode Characteristics VGS=10V VGS=4.5V VGS=10V ID=8.5A VGS=4.5V 4.5V 3.5V 1.20E+01 ID(A) 125°C 8.00E+00 VGS=3V 4.00E+00 0.00E+00 VGS(Volts) Figure Transfer Characteristics 25°C 2.00E+01 1.60E+01 VDS=5V
Temperature (°C) Figure On-Resistance Junction Temperature
125°C
Alpha Omega Semiconductor, Ltd.
AO4609
N-CHANNEL: TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
(Volts) (nC) Figure Gate-Charge Characteristics 1500 VDS=15V ID=8.5A Capacitance (pF) 1250 Ciss 1000 Crss (Volts) Figure Capacitance Characteristics Coss
100.0
RDS(ON) limited 10ms 0.1s 100µs 10µs Power
0.001
TJ(Max)=150°C TA=25°C
(Amps)
10.0
TJ(Max)=150°C TA=25°C
(Volts) Figure Maximum Forward Biased Safe Operating Area (Note
0.01
1000
Pulse Width Figure Single Pulse Power Rating Junction-toAmbient (Note
Normalized Transient Thermal Resistance
D=Ton/(Ton+Toff) TJ,PK=TA+PDM.ZJA.RJA RJA=62.5°C/W
descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse 0.01 0.00001 0.0001 0.001 0.01
Toff 1000
Pulse Width Figure Normalized Maximum Transient Thermal Impedance
Alpha Omega Semiconductor, Ltd.
AO4609
P-CHANNEL TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
-10V -4.5V VGS=-3.5V -2.5V -2.0V -VDS (Volts) On-Region Characteristics Normalized On-Resistance VGS=-2.5V RDS(ON) VGS=-10V VGS=-4.5V VGS=-2.5V ID=-2A -VGS(Volts) Figure Transfer Characteristics -ID(A) 125°C VDS=-5V 25°C
VGS=-4.5V
VGS=-10V Figure On-Resistance Drain Current Gate Voltage ID=-2A RDS(ON) -VGS (Volts) Figure On-Resistance Gate-Source Voltage 25°C
Temperature (°C) Figure On-Resistance Junction Temperature 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 1.0E-06 -VSD (Volts) Figure Body-Diode Characteristics 25°C 125°C
125°C
Alpha Omega Semiconductor, Ltd.
AO4609
P-CHANNEL TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
-VGS (Volts) (nC) Figure Gate-Charge Characteristics VDS=-15V ID=-3A Capacitance (pF) Coss -VDS (Volts) Figure Capacitance Characteristics Crss Ciss
100.0 TJ(Max)=150°C TA=25°C RDS(ON) limited -VDS (Volts) Figure Maximum Forward Biased Safe Operating Area (Note Power (Amps) 10.0 10µs 100µs 10ms 0.1s
TJ(Max)=150°C TA=25°C
0.001
0.01
1000
Pulse Width Figure Single Pulse Power Rating Junction-toAmbient (Note
Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=62.5°C/W
descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
0.01 0.00001
0.0001
0.001
0.01
1000
Pulse Width Figure Normalized Maximum Transient Thermal Impedance
Alpha Omega Semiconductor, Ltd.
ALPHA OMEGA
SEMICONDUCTOR, INC.
SO-8 Package Data
DIMENSIONS MILLIMETERS SYMBOLS
DIMENSIONS INCHES
1.45 0.00 0.33 0.19 4.80 3.80 5.80 0.25 0.40
1.50 1.45 1.27
1.55 0.10 0.51 0.25 5.00 4.00 6.20 0.50 1.27 0.10
0.057 0.000 0.013 0.007 0.189 0.150 0.228 0.010 0.016
0.059 0.057 0.050
0.061 0.004 0.020 0.010 0.197 0.157 0.244 0.020 0.050 0.004
NOTE: LEAD FINISH: MICROINCHES MIN. THICKNESS Tin/Lead (SOLDER) PLATED LEAD TOLERANCE 0.10 mil) UNLESS OTHERWISE SPECIFIED COPLANARITY 0.10 DIMENSION MEASURED GAGE PLANE
PACKAGE MARKING DESCRIPTION
RECOMMENDED LAND PATTERN
LOGO FAYWLC
NOTE: LOGO 4609
LOGO PART NUMBER CODE. LOCATION ASSEMBLY LOCATION YEAR CODE WEEK CODE. ASSEMBLY CODE
SO-8 PART CODE
UNIT:
PART AO4609
CODE 4609
Rev.
ALPHA OMEGA
SEMICONDUCTOR, INC.
SO-8 Carrier Tape
SO-8 Tape Reel Data
SO-8 Reel
SO-8 Tape
Leader Trailer Orientation
Document
PD-00064
ALPHA OMEGA
SEMICONDUCTOR, LTD.
Version
Title
AO4609 Marking Description
SO-8 PACKAGE MARKING DESCRIPTION
Standard product
Green product
NOTE: LOGO 4609
LOGO PART NUMBER CODE. FOUNDRY ASSEMBLY LOCATION YEAR CODE WEEK CODE. ASSEMBLY CODE
PART DESCRIPTION AO4609 AO4609L Standard product Green product
CODE 4609 4609
SEATING PLANE
GAUGE PLANE
NOTE DIMENSIONS MILLMETERS. 2.DIMENSIONS INCLUSIVE PLATING. 3.PACKAGE BODY SIZES EXCLUDE MOLD FLASH GATE BURRS. DIMENSION MEASURED GAUGE PLANE. CONTROLLING DIMENSION MILLIMETER. CONVERTED INCH DIMENSIONS NECESSARILY EXACT.
SYMBOLS DIMENSIONS MILLIMETERS
DIMENSIONS INCHES
RECOMMENDED LAND PATTERN
1.35 0.10 1.25 0.31 0.17 4.80 3.80 5.80 0.25 0.40
1.65 1.50 4.90 3.90 1.27 6.00
1.75 0.25 1.65 0.51 0.25 5.00 4.00 6.20 0.50 1.27
0.053 0.004 0.049 0.012 0.007 0.189 0.150
0.228 0.010 0.016
0.065 0.059 0.193 0.154 0.050 0.236
0.069 0.010 0.065 0.020 0.010 0.197 0.157
0.244 0.020 0.050
UNIT:
ALPHA OMEGA
SEMICONDUCTOR, LTD.
SO-8 Carrier Tape
SO-8 Tape Reel Data
SO-8 Reel
SO-8 Tape
Leader Trailer Orientation
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