AO3419 uses advanced trench technology provide excellent RDS(ON), gate

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AO3419 uses advanced trench technology provide excellent RDS(ON), gate

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AO3419, AO3419L Green Product P-Channel Enhancement Mode Field Effect Transistor
AO3419 uses advanced trench technology provide excellent RDS(ON), gate charge operation with gate voltages 2.5V. This device suitable load switch applications. protected. AO3419L Green Product offered lead-free package.
Features
-20V -3.5 RDS(ON) (VGS -10V) RDS(ON) (VGS -4.5V) RDS(ON) 145m (VGS -2.5V) Rating: 2000V
TO-236 (SOT-23) View
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation
Maximum -3.5 -2.8
Units
TA=25°C TA=70°C TA=25°C TA=70°C TSTG
Junction Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead
Symbol Steady-State Steady-State
Units °C/W °C/W °C/W
Alpha Omega Semiconductor, Ltd.
AO3419, AO3419L
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-16V, VGS=0V TJ=55°C VDS=0V, VGS=±10V VDS=0V, VGS=±12V VDS=VGS ID=-250µA VGS=-4.5V, VDS=-5V VGS=-10V, ID=-3.5A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=-4.5V, ID=-3A VGS=-2.5V, ID=-1A Forward Transconductance VDS=-5V, ID=-3.5A -0.65 Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current -0.7 -0.81 -0.95 VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-4.5V, VDS=-10V, ID=-3.5A VGS=-10V, VDS=-10V, RL=2.8, RGEN=3 IF=-3.5A, dI/dt=100A/µs 13.5 -0.9 -0.5 -2.5 -1.4 Units
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Total Gate Charge Gate Source Charge tD(on) tD(off) Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-3.5A, dI/dt=100A/µs
value measured with device mounted FR-4 board with 2oz. Copper, still environment with =25°C. value given application depends user's specific board design. current rating based thermal resistance rating. Repetitive rating, pulse width limited junction temperature. thermal impedence from junction lead lead ambient. static characteristics Figures 6,12,14 obtained using pulses, duty cycle 0.5% max. These tests performed with device mounted FR-4 board with 2oz. Copper, still environment with A=25°C. curve provides single pulse rating. THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
AO3419, AO3419L
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
-3.0V -2.5V -2.0V VGS=-1.5V -9.0V -8.0V -7.0V -6.0V -4.0V -ID(A) -VGS(Volts) Figure Transfer Characteristics ID=-3A, VGS=-4.5V Normalized On-Resistance VGS=-2.5V ID=-3.5A, VGS=-10V 125°C -10.0V -5.0V VDS=-5V
25°C
-VDS (Volts) On-Region Characteristics RDS(ON) Figure On-Resistance Drain Current Gate Voltage VGS=-10V VGS=-4.5V
ID=-1A, VGS=-2.5V
Temperature (°C) Figure On-Resistance Junction Temperature
RDS(ON) -VGS (Volts) Figure On-Resistance Gate-Source Voltage 125°C ID=-3.5A
1E+01 1E+00 1E-01 1E-02 1E-03 1E-04 25°C 1E-05 1E-06 -VSD (Volts) Figure Body-Diode Characteristics 25°C
125°C
Alpha Omega Semiconductor, Ltd.
AO3419, AO3419L
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
-VGS (Volts) (nC) Figure Gate-Charge Characteristics ID=-3.5A Capacitance (pF) Ciss
Crss
Coss
-VDS (Volts) Figure Capacitance Characteristics
100.0
TJ(Max)=150°C TA=25°C RDS(ON) limited
10µs Power 100µs
TJ(Max)=150°C TA=25°C
(Amps)
10.0
-VDS (Volts)
10ms 0.1s
0.001
0.01
1000
Figure Maximum Forward Biased Safe Operating Area (Note
Pulse Width Figure Single Pulse Power Rating Junction-toAmbient (Note
Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=90°C/W
descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
0.01 0.00001
0.0001
0.001
0.01
1000
Pulse Width Figure Normalized Maximum Transient Thermal Impedance
Alpha Omega Semiconductor, Ltd.

AO3419 uses advanced trench technology provide excellent RDS(ON), gate

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