-Low Gate Charge -Simple Drive Requirement -Fast Switching Free Platin

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-Low Gate Charge -Simple Drive Requirement -Fast Switching Free Platin

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AF70N02
-Low Gate Charge -Simple Drive Requirement -Fast Switching Free Plating Product
TO-252 package universally preferred commercial-industrial surface mount applications suited voltage applications such DC/DC converters.
Product Summary
BVDSS RDS(ON)
Assignments
(Front View)
Descriptions
Name
Description Source Gate Drain
Ordering information
Feature :MOSFET 70N02 Package TO-252 Packing Blank Tube Bulk Tape Reel
Block Diagram
This datasheet contains product information. Anachip Corp. reserves rights modify product specification without notice. liability assumed result this product. rights under patent accompany sale product.
Rev. 2005
AF70N02
N-Channel Enhancement Mode Power MOSFET Absolute Maximum Ratings
Symbol TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS=10V Pulsed Drain Current (Note Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Rating 0.53 Units
Thermal Data
Symbol Parameter Thermal Resistance Junction-Case Thermal Resistance Junction- Ambient Max. Max. Maximum Units
Electrical Characteristics unless otherwise noted)
Symbol BVDSS BVDSS/TJ RDS(ON) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Drain-Source Leakage Gate Source Leakage Total Gate Charge (Note Gate-Source Charge Gate-Drain ("Miller") Charge Turn-On Delay Time (Note Rise Time Turn-Off Delay Time Fall-Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS=0V, ID=250uA Reference ID=1mA VGS=10V, ID=33A VGS=4.5V, ID=20A VDS= VGS, ID=250uA VDS=10V, ID=33A VDS=25V, VGS=0V VDS=20V, VGS=0V VGS=±20V ID=33A VDS=20V VGS=5V VDS=15V ID=33A RG=3.3, VGS=10V RD=0.45 VGS=0V VDS=25V, f=1.0MHz Min. Limits Typ. 0.037 Max. ±100 Unit
Source-Drain Diode
Sym. Parameter Test Conditions Continuous Source Current (Body Diode) VD=VG=0V, VS=1.26V Pulsed Source Current (Body Diode)
(Note
Min.
Typ.
Max. 1.26
Unit
Forward Voltage (Note
IS=66A, VGS=0V
Anachip Corp. www.anachip.com.tw
Rev.
2005
AF70N02
N-Channel Enhancement Mode Power MOSFET Drain-Source Avalanche Ratings
Sym. Parameter Single Pulse Avalanche Energy (Note Avalanche Current Test Conditions VDD=25V, ID=35A, L=100uH, VGS=10V Min. Typ. Max. Unit
Note Pulse width limited safe operating area. Note Pulse width 300us, duty cycle
Typical Performance Characteristics
Typical Output Characteristics
Typical Output Characteristics
On-Resistance v.s. Gate Voltage
Normalized On-Resistance v.s. Junction Temperature
Anachip Corp. www.anachip.com.tw
Rev.
2005
AF70N02
N-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics (Continued)
Maximum Drain Current v.s. Case Temperature
Typical Power Dissipation
Maximum Safe Operating Area
Effective Transient Thermal Impedance
Gate Charge Characteristics
Anachip Corp. www.anachip.com.tw
Typical Capacitance Characteristics
Rev.
2005
AF70N02
N-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics (Continued)
Forward Characteristic Reverse Diode
Gate Threshold Voltage v.s. Junction Temperature
Switching Time Circuit
Switching Time Waveform
Gate Charge Circuit
Gate Charge Waveform
Anachip Corp. www.anachip.com.tw
Rev.
2005
AF70N02
N-Channel Enhancement Mode Power MOSFET Marking Information
TO-252
View) Logo Part Number 70N02 YYWWX Year week Internal code Optional)
Package Information
Package Type: TO-252
0.127~0.381 (0.1mm)
Dimensions Millimeters. Dimension Does Include Mold Protrusions.
Symbol
Dimensions Millimeters Min. Nom. Max. 1.80 2.30 2.80 0.40 0.50 0.60 0.40 0.70 1.00 6.00 6.50 7.00 4.80 5.35 5.90 2.20 2.63 3.05 0.50 0.85 1.20 5.10 5.70 6.30 0.50 1.10 1.70 3.50 4.00 4.50 2.30 0.35 0.50 0.65
Anachip Corp. www.anachip.com.tw
Rev.
2005

-Low Gate Charge -Simple Drive Requirement -Fast Switching Free Platin

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