Simple Drive Requirement On-resistance Fast Switching advanced po
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AF4362N
Simple Drive Requirement On-resistance Fast Switching
advanced power MOSFET provides designer with best combination fast switching, ruggedized device design, on-resistance cost-effectiveness. SO-8 package universally preferred commercial-industrial surface mount applications suited voltage applications such DC/DC converters.
Product Summary
BVDSS RDS(ON)
Assignments
Descriptions
Name
Description Source Gate Drain
SO-8
Ordering information
Feature :MOSFET 4362N Package SO-8 Lead Free Blank Normal Lead Free Package Packing Blank Tube Bulk Tape Reel
This datasheet contains product information. Anachip Corp. reserves rights modify product specification without notice. liability assumed result this product. rights under patent accompany sale product.
Rev. 2005
AF4362N
N-Channel Enhancement Mode Power MOSFET Absolute Maximum Ratings
Symbol TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note Pulsed Drain Current (Note Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Rating 0.02 Units
Thermal Data
Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient (Note Max. Maximum Units
Electrical Characteristics unless otherwise specified
Symbol BVDSS BVDSS RDS(ON) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss Parameter Test Conditions Min. Typ. 0.01 5080 Max. ±100 8100 Units V/oC Drain-Source Breakdown Voltage VGS=0V, ID=250uA Breakdown Voltage Temperature Reference 25oC, ID=1mA Coefficient VGS=10V, ID=18A Static Drain-Source VGS=4.5V, ID=12A On-Resistance (Note VGS=2.5V, ID=6A Gate Threshold Voltage VDS=VGS, ID=250uA Forward Transconductance VDS=10V, ID=12A Drain-Source Leakage Current VDS=30V, VGS=0V (TJ=25oC) Drain-Source Leakage Current VDS=24V, VGS=0V (TJ=70oC) Gate-Source Leakage VGS=±12V Total Gate Charge (Note ID=18A, VDS=24V, Gate-Source Charge VGS=4.5V Gate-Drain ("Miller") Charge Turn-On Delay Time (Note VDS=15V, ID=1A, Rise Time RG=3.3, VGS=10V Turn-Off Delay Time RD=15 Fall-Time Input Capacitance VGS=0V, VDS=25V, Output Capacitance f=1.0MHz Reverse Transfer Capacitance
Source-Drain Diode
Symbol Parameter Forward Voltage (Note Reverse Recovery Time Reverse Recovery Charge
Test Conditions IS=18A, VGS=0V IS=18A, VGS=0V, dl/dt=100A/µs
Min.
Typ.
Max.
Unit
Note Surface mounted copper board; when mounted Min. copper pad. Note Pulse width limited Max. junction temperature. Note Pulse width 300us, duty cycle
Anachip Corp. www.anachip.com.tw
Rev. 2005
AF4362N
N-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics
Typical Output Characteristics
Typical Output Characteristics
On-Resistance v.s. Gate Voltage
Normalized On-Resistance v.s. Junction Temperature
Forward Characteristic Reverse Diode
Anachip Corp. www.anachip.com.tw
Gate Threshold Voltage v.s. Junction Temperature
Rev. 2005
AF4362N
N-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics (Continued)
Gate Charge Characteristics
Typical Capacitance Characteristics
Maximum Safe Operating Area
Effective Transient Thermal Impedance
Switching Time Waveform
Gate Charge Waveform
Anachip Corp. www.anachip.com.tw
Rev. 2005
AF4362N
N-Channel Enhancement Mode Power MOSFET Marking Information
SO-8
View
Logo Part Number
4362
code: "X": Non-Lead Free; "X": Lead Free "A~Z": 01~26; "A~Z": 27~52 Week code: "A~Z": 01~26; "A~Z": 27~52 Year code: =2004 Factory code
Package Information
Package Type: SO-8
DETAIL
DETAIL
Dimensions Millimeters. Dimension Does Include Mold Protrusions.
Symbol
Dimensions Millimeters Min. Nom. Max. 1.35 1.55 1.75 0.10 0.18 0.25 0.33 0.41 0.51 0.19 0.22 0.25 4.80 4.90 5.00 5.80 6.15 6.50 3.80 3.90 4.00 0.38 0.71 1.27 1.27 TYP.
Anachip Corp. www.anachip.com.tw
Rev. 2005
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