P-Channel Enhancement Mode Power MOSFET Features -Lower On-Resist

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P-Channel Enhancement Mode Power MOSFET Features -Lower On-Resist

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AF40P03
P-Channel Enhancement Mode Power MOSFET Features
-Lower On-Resistance -Simple Drive Requirement -Fast Switching Characteristic -RoHS Compliant Free Plating Product
TO-252 package universally preferred commercial-industrial surface mount applications suited voltage applications such DC/DC converters.
Product Summary
BVDSS RDS(ON)
Assignments
(Front View)
Descriptions
Name
Description Source Gate Drain
Ordering information
Feature :MOSFET 40P03 Package TO-252 Packing Blank Tube Bulk Tape Reel
Block Diagram
This datasheet contains product information. Anachip Corp. reserves rights modify product specification without notice. liability assumed result this product. rights under patent accompany sale product.
Rev. 2005
AF40P03
P-Channel Enhancement Mode Power MOSFET Absolute Maximum Ratings
Symbol TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS=10V Pulsed Drain Current (Note Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Rating -120 31.3 0.25 Units
Thermal Data
Symbol Parameter Thermal Resistance Junction-Case Thermal Resistance Junction- Ambient Max. Max. Maximum Units
Electrical Characteristics unless otherwise noted)
Symbol BVDSS BVDSS/TJ RDS(ON) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Static Drain-Source On-Resistance (Note Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Drain-Source Leakage Gate Source Leakage Total Gate Charge (Note Gate-Source Charge Gate-Drain ("Miller") Charge Turn-On Delay Time (Note Rise Time Turn-Off Delay Time Fall-Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS=0V, ID=-250uA Reference ID=-1mA VGS=-10V, ID=-18A VGS=-4.5V, ID=-14A VDS= VGS, ID=-250uA VDS=-10V, ID=-18A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS=±20V ID=-18A VDS=-24V VGS=-4.5V VDS=-15V ID=-18A RG=3.3, VGS=-10V RD=0.8 VGS=0V VDS=-25V, f=1.0MHz Min. Limits Typ. -0.02 Max. ±100 1465 Unit
Source-Drain Diode
Symbol Parameter Forward Voltage (Note Reverse Recovery Time (Note Reverse Recovery Charge Test Conditions IS=-18A, VGS=0V IS=-18A, VGS=0V, Dl/dt=-100A/µs Min. Typ. Max. -1.2 Unit
Anachip Corp. www.anachip.com.tw
Rev.
2005
AF40P03
P-Channel Enhancement Mode Power MOSFET
Note Pulse width limited safe operating area. Note Pulse width 300us, duty cycle
Typical Performance Characteristics
Typical Output Characteristics
Typical Output Characteristics
On-Resistance v.s. Gate Voltage
Normalized On-Resistance v.s. Junction Temperature
Forward Characteristic Reverse Diode
Gate Threshold Voltage v.s. Junction Temperature
Anachip Corp. www.anachip.com.tw
Rev.
2005
AF40P03
P-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics
Gate Charge Characteristics
Typical Capacitance Characteristics
Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
Switching Time Waveform
Gate Charge Waveform
Anachip Corp. www.anachip.com.tw
Rev.
2005
AF40P03
P-Channel Enhancement Mode Power MOSFET Marking Information
TO-252
View) Logo Part Number 40P03 YYWWX Year week Internal code Optional)
Package Information
Package Type: TO-252
0.127~0.381 (0.1mm)
Dimensions Millimeters. Dimension Does Include Mold Protrusions.
Symbol
Dimensions Millimeters Min. Nom. Max. 1.80 2.30 2.80 0.40 0.50 0.60 0.40 0.70 1.00 6.00 6.50 7.00 4.80 5.35 5.90 2.20 2.63 3.05 0.50 0.85 1.20 5.10 5.70 6.30 0.50 1.10 1.70 3.50 4.00 4.50 2.30 0.35 0.50 0.65
Anachip Corp. www.anachip.com.tw
Rev.
2005

P-Channel Enhancement Mode Power MOSFET Features -Lower On-Resist

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