COMPLEMENTARY N-CHANNEL P-CHANNEL MOSFET GENERAL DESCRIPTION ALD1

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COMPLEMENTARY N-CHANNEL P-CHANNEL MOSFET GENERAL DESCRIPTION ALD1

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ALD1115
COMPLEMENTARY N-CHANNEL P-CHANNEL MOSFET
GENERAL DESCRIPTION ALD1115 monolithic complementary N-channel P-channel transistor pair intended broad range analog applications. These enhancement-mode transistors manufactured with Advanced Linear Devices' enhanced ACMOS silicon gate CMOS process. consists N-channel MOSFET P-channel MOSFET package. ALD1115 dual version quad complementary ALD1105. ALD1115 offers high input impedance negative current temperature coefficient. transistor pair designed precision signal switching amplifying applications +12V systems where input bias current, input capacitance fast switching speed desired. Since these MOSFET devices, they feature very large (almost infinite) current gain frequency, near operating environment. When connected parallel with sources, drains gates connected together, CMOS analog switch constructed. addition, ALD1115 intended building block CMOS inverters, differential amplifier input stages, transmission gates, multiplexer applications. ALD1115 suitable precision applications which require very high current gain, beta, such current mirrors current sources. high input impedance high current gain field effect transistors result extremely current loss through control gate. current gain limited gate input leakage current, which specified 30pA room temperature. connected substrate, which most positive voltage potential ALD1115, usually SP(5). Similarly, connected most negative voltage potential ALD1115, usually (1). FEATURES Thermal tracking between N-channel P-channel threshold voltage 0.7V both N-channel P-channel MOSFETs input capacitance High input impedance 1013 typical input output leakage currents Negative current (IDS) temperature coefficient Enhancement mode (normally off) current gain Single N-channel MOSFET single P-channel MOSFET package ORDERING INFORMATION ("L"suffix lead free version)
-55°C +125°C 8-Pin CERDIP Package ALD1115 ALD1115
Contact factory industrial temperature range.
APPLICATIONS Precision current mirrors Complementary push-pull linear drives Discrete analog switches Analog signal choppers Differential amplifier input stage Voltage comparator Data converters Sample Hold Analog current inverter Precision matched current sources CMOS inverter stage Diode clamps Source followers
CONFIGURATION
PACKAGE
BLOCK DIAGRAM
GATE
DRAIN
SOURCE
Operating Temperature Range* +70°C +70°C 8-Pin MSOP Package 8-Pin Plastic Package ALD1115 ALD1115PAL
GATE
+70°C 8-Pin SOIC Package ALD1115 ALD1115
DRAIN SOURCE
2006 Advanced Linear Devices, Inc. Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com
ABSOLUTE MAXIMUM RATINGS
Drain-source voltage, Gate-source voltage, Power dissipation Operating temperature range Storage temperature range Lead temperature, seconds 13.2V 13.2V +70°C -55°C +125°C -65°C +150°C +260°C
package package
OPERATING ELECTRICAL CHARACTERISTICS 25°C unless otherwise specified
Parameter Channel Symbol Unit Test Conditions Channel -0.4 -0.7 -1.0 Unit Test Conditions -1µA
Gate Threshold Voltage Gate Threshold Temperature TCVT Drift Drain Current Trans-. conductance Output Conductance (ON)
-1.2
mV/°C
-1.3
mV/°C
IDS= 10mA 10mA 0.1V
-1.3
IDS= -10mA -10mA -0.1V -1µA
mmho µmho
0.25
0.67
mmho µmho
Drain Source RDS(ON) Resistance Drain Source Breakdown Voltage Drain Current Gate Leakage Current Input Capacitance BVDSS
1200
1800
IDS(OFF) IGSS CISS
=12V 125°C =12V 125°C
-12V 125°C =-12V 125°C
ALD1115
Advanced Linear Devices
CHANNEL TYPICAL PERFORMANCE CHARACTERISTICS
OUTPUT CHARACTERISTICS
VOLTAGE OUTPUT CHARACTERISTICS
DRAIN SOURCE CURRENT (µA)
25°C -12V
DRAIN SOURCE CURRENT (mA)
-7.5 25°C
-12V -10V
-5.0
-250
-2.5
DRAIN SOURCE VOLTAGE
-500 -320 -160
DRAIN SOURCE VOLTAGE (mV)
FORWARD TRANSCONDUCTANCE DRAIN SOURCE VOLTAGE
FORWARD TRANSCONDUCTANCE (mmho)
0.05 0.02 0.01 +25°C -1mA +125°C
TRANSFER CHARACTERISTIC WITH SUBSTRATE BIAS
DRAIN SOURCE CURRENT (µA)
1KHz
-5mA
25°C -0.8 -1.6 -2.4 -3.2 -4.0
DRAIN SOURCE VOLTAGE
GATE SOURCE VOLTAGE
DRAIN SOURCE RESISTANCE (ON) GATE SOURCE VOLTAGE
DRAIN SOURCE RESISTANCE
0.4V +125°C
DRAIN CURRENT AMBIENT TEMPERATURE
DRAIN SOURCE CURRENT (pA)
1000 -12V
+25°C
+100 +125
GATE SOURCE VOLTAGE
AMBIENT TEMPERATURE (°C)
ALD1115
Advanced Linear Devices
CHANNEL TYPICAL PERFORMANCE CHARACTERISTICS
OUTPUT CHARACTERISTICS
1000
DRAIN SOURCE CURRENT (mA)
VOLTAGE OUTPUT CHARACTERISTICS
DRAIN SOURCE CURRENT (µA)
25°C
25°C
-500
-1000 -160
DRAIN SOURCE VOLTAGE
DRAIN SOURCE VOLTAGE (mV)
FORWARD TRANSCONDUCTANCE DRAIN SOURCE VOLTAGE
TRANSFER CHARACTERISTIC WITH SUBSTRATE BIAS
FORWARD TRANSCONDUCTANCE (mmho)
10mA +25°C
DRAIN SOURCE CURRENT (µA)
1KHz
25°C -10V -12V
+125°C
DRAIN SOURCE VOLTAGE
GATE SOURCE VOLTAGE
DRAIN SOURCE RESISTANCE (ON) GATE SOURCE VOLTAGE
DRAIN SOURCE RESISTANCE
DRAIN CURRENT AMBIENT TEMPERATURE
DRAIN SOURCE CURRENT (pA)
1000 +12V
0.2V
+125°C
+25°C
+100 +125
GATE SOURCE VOLTAGE
AMBIENT TEMPERATURE (°C)
ALD1115
Advanced Linear Devices
TYPICAL APPLICATIONS
CURRENT SOURCE MIRROR
CURRENT SOURCE WITH GATE CONTROL
ISET
RSET SOURCE
ISET Digital Logic Control Current Source
RSET
ISOURCE
Channel MOSFET Channel MOSFET
SOURCE ISET RSET RSET
Channel MOSFET Q3,Q4 Channel MOSFET
CMOS INVERTER
CMOS ANALOG SWITCH
CONTROL
CONTROL
ALD1115
Advanced Linear Devices
TYPICAL APPLICATIONS
DIODE-CONNECTED CONFIGURATION
SOURCE FOLLOWER
VOUT
VOUT
CASCODE CURRENT SOURCES
ISET ISOURCE
RSET
ISET RSET ISOURCE
ISOURCE ISET
RSET
RSET
Channel MOSFET (1/2 ALD1105 ALD1116)
Channel MOSFET
ALD1115
Advanced Linear Devices

COMPLEMENTARY N-CHANNEL P-CHANNEL MOSFET GENERAL DESCRIPTION ALD1

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