AO3401A uses advanced trench technology provide excellent RDS(ON) gate

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AO3401A uses advanced trench technology provide excellent RDS(ON) gate

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AO3401A P-Channel Enhancement Mode Field Effect Transistor
AO3401A uses advanced trench technology provide excellent RDS(ON) gate charge operation gate voltages 2.5V. This device suitable load switch other general applications. Standard product AO3401A Pb-free (meets ROHS Sony specifications).
-30V -10V) -4.3A RDS(ON) (VGS -10V) RDS(ON) (VGS -4.5V) RDS(ON) 80mW -2.5V) Rg,Ciss,Coss,Crss Tested
TO-236 (SOT-23) View
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current TA=25°C Power Dissipation TA=70°C Junction Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead TA=25°C TA=70°C TSTG
Maximum -4.3 -3.8
Units
Symbol Steady-State Steady-State
Units °C/W °C/W °C/W
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AO3401A Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-30V, VGS=0V TJ=55°C VDS=0V, VGS=±12V VDS=VGS ID=-250µA VGS=-4.5V, VDS=-5V VGS=-10V, ID=-4.3A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=-4.5V, ID=-3.5A VGS=-2.5V, ID=-2.5A Forward Transconductance VDS=-5V, ID=-4.3A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current -0.6 -0.75 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-4.5V, VDS=-15V, ID=-4.3A VGS=-10V, VDS=-15V, RL=3.5, RGEN=6 IF=-4.3A, dI/dt=100A/µs
Units
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current
±100 -1.3
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance Gate resistance
1200
12.2
SWITCHING PARAMETERS Total Gate Charge Gate Source Charge tD(on) tD(off) Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
14.3
Body Diode Reverse Recovery Charge IF=-4.3A, dI/dt=100A/µs
value measured with device mounted FR-4 board with 2oz. Copper, still environment with =25°C. value given application depends user's specific board design. Repetitive rating, pulse width limited junction temperature. thermal impedence from junction lead lead ambient. static characteristics Figures obtained using <300 pulses, duty cycle 0.5% max. These tests performed with device mounted FR-4 board with 2oz. Copper, still environment with A=25°C. curve provides single pulse rating. F.The current rating based thermal resistance rating. Rev0: Apr.2007 THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AO3401A
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
-10V -VDS (Volts) Figure On-Region Characteristics VGS=-2.5V Normalized On-Resistance ID=-3.5A, VGS=-4.5V ID=-4.3A, VGS=-10V VGS=-2.5V ID=-2.5A -2.5V -ID(A) -4.5V -VGS(Volts) Figure Transfer Characteristics VDS=-5V
125°C 25°C
VGS=-2V
RDS(ON)
VGS=-4.5V
VGS=-10V Figure On-Resistance Drain Current Gate Voltage ID=-4.3A -VGS (Volts) Figure On-Resistance Gate-Source Voltage 25°C 125°C
Temperature (°C) Figure On-Resistance Junction Temperature 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 1.0E-06 -VSD (Volts) Figure Body-Diode Characteristics 25°C 125°C
Alpha Omega Semiconductor, Ltd.
RDS(ON)
www.aosmd.com
AO3401A
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
-VGS (Volts) (nC) Figure Gate-Charge Characteristics VDS=-15V ID=-4.3A Capacitance (pF) 1200 Ciss 1600
Coss
Crss
-VDS (Volts) Figure Capacitance Characteristics
100.0 10µs 100µs TJ(Max)=150°C TC=25°C (Volts) 10ms 0.1s Power RDS(ON) limited
0.001 TJ(Max)=150°C TA=25°C
10.0 (Amps)
0.01
0.01
1000
Figure Maximum Forward Biased Safe Operating Area (Note
Pulse Width Figure Single Pulse Power Rating Junction-toAmbient (Note
Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=125°C/W
descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse 0.01 0.00001 0.0001 Pulse Width Figure Normalized Maximum Transient Thermal Impedance 0.001 0.01 1000
Alpha Omega Semiconductor, Ltd.
www.aosmd.com

AO3401A uses advanced trench technology provide excellent RDS(ON) gate

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