High Gain Amplifier Chip Size: 1410 1010 (55.5 39.7 mils) Chip Si

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High Gain Amplifier Chip Size: 1410 1010 (55.5 39.7 mils) Chip Si

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AMMC-5620
High Gain Amplifier
Chip Size: 1410 1010 (55.5 39.7 mils) Chip Size Tolerance: mils) Chip Thickness: mils) Dimensions: (3.1 mils larger)
Description
Avago Technologies' AMMC-5620 MMIC GaAs wideband amplifier designed medium output power high gain over frequency range. cascaded stages provide high gain while single bias supply offers ease use. fabricated using PHEMT integrated circuit process. input output ports have matching circuitry environments. backside chip both ground. This helps simplify assembly process reduces assembly related performance variations costs. improved reliability moisture protection, passivated active areas. MMIC cost effective alternative hybrid (discrete FET) amplifiers that require complex tuning assembly processes. AMMC-5620 Absolute Maximum Ratings[1] Symbol Tstg Tmax Parameters/Conditions Drain Supply Voltage Total Drain Current Power Dissipation Input Power Channel Temp. Operating Backside Temp. Storage Temp. Maximum Assembly Temp. max)
Features
Frequency Range: High Gain: Typical Output Power: 15dBm Typical Input Output Return Loss: Positive Gain Slope: 0.21dB/GHz Typical Single Supply Bias: Typical
Applications
General purpose, wide-band amplifier communication systems microwave instrumentation High gain amplifier
Units
Min.
Max. +150
+165 +300
Note: Operation excess these conditions result permanent damage this device.
Note: These devices sensitive. following precautions strongly recommended. Ensure that approved carrier used when dice transported from destination another. Personal grounding worn times when handling these devices
AMMC-5620 Specifications/Physical Properties Symbol qch-b Parameters Test Conditions Recommended Drain Supply Current Total Drain Supply Current Total Drain Supply Current Thermal Resistance (Backside temperature (Tb) Units °C/W Min. Typical Max.
Notes: Backside temperature 25°C unless otherwise noted Channel-to-backside Thermal Resistance (qch-b) 47°C/W Tchannel (Tc) 150°C measured using infrared microscopy. Thermal Resistance backside temperature (Tb) 25°C calculated from measured data.
AMMC-5620 Specifications 25°C, VDD=5V, IDD=95 Zo=50 Symbol
Gain Slope
Parameters Test Conditions Small-signal Gain Positive Small-signal Gain Slope Input Return Loss Output Return Loss Reverse Isolation Output Power Gain Compression Saturated Output Power (3dB Gain Compression) Output Order Intercept Point Noise Figure
Units dB/GHz
Min.
Typical +0.21
Max.
RLin RLout P-1dB Psat OIP3
12.5 14.5
23.5
Notes: 100% on-wafer test done frequency GHz, except noted.
AMMC-5620 Typical Performances (Tchuck=25°C, VDD=5V,
ISOLATION (dB) INPUT (dB)
GAIN (dB)
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure Gain
Figure Isolation
Figure Input Return Loss
OUTPUT (dB) (dB)
P1dB (dBm)
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4.Output Return Loss
Figure Noise Figure
Figure Output Power Gain Compression
AMMC-5620 Typical Performances Supply Voltage 25°C, Zo=50)
Vdd=4V Vdd=5V Vdd=6V
ISOLATION (dB)
INPUT (dB)
GAIN (dB)
Vdd=4V Vdd=5V Vdd=6V
Vdd=4V Vdd=5V Vdd=6V
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure Gain Voltage
Figure Isolation Voltage
Figure Input Return Loss Voltage
AMMC-5620 Typical Performances Supply Voltage (cont.) 25°C, Zo=50)
OUTPUT (dB) P1dB (dBm)
Vdd=4V Vdd=5V Vdd=6V
Vdd=4V Vdd=5V Vdd=6V
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure Output Return Loss Voltage
Figure Output Power Voltage
AMMC-5620 Typical Performance Temperature (VDD Zo=50)
ISOLATION (dB) GAIN (dB)
INPUT (dB)
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure Gain Temperature
Figure Isolation Temperature
Figure Input Return Loss Temperature
OUTPUT (dB) (dB)
P1dB (dB)
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure Output Return Loss Temperature
Figure Noise Figure Temperature
Figure Output Power Temperature
AMMC-5620 Typical Scattering Parameters 25°C,
Freq 2.00 2.50 3.00 3.50 4.00 4.50 5.00 5.50 6.00 6.50 7.00 7.50 8.00 8.50 9.00 9.50 10.00 10.50 11.00 11.50 12.00 12.50 13.00 13.50 14.00 14.50 15.00 15.50 16.00 16.50 17.00 17.50 18.00 18.50 19.00 19.50 20.00 20.50 21.00 21.50 22.00 -2.9 -3.3 -3.5 -3.7 -3.8 -4.0 -5.0 -7.7 -12.0 -16.9 -21.9 -27.2 -32.8 -33.4 -30.9 -27.7 -24.9 -22.6 -20.7 -19.3 -18.2 -17.3 -16.6 -16.0 -15.6 -15.3 -15.1 -15.0 -14.9 -14.9 -15.0 -15.0 -14.9 -14.7 -14.3 -13.8 -13.1 -11.9 -10.5 -9.0 -7.5 0.72 0.69 0.67 0.65 0.64 0.63 0.56 0.41 0.25 0.14 0.08 0.04 0.02 0.02 0.03 0.04 0.06 0.07 0.09 0.11 0.12 0.14 0.15 0.16 0.17 0.17 0.18 0.18 0.18 0.18 0.18 0.18 0.18 0.18 0.19 0.22 0.25 0.35 0.42 Phase -147 -168 -103 -113 -123 -131 -140 -148 -156 -164 -172 -23.3 -16.1 -10.0 -4.6 12.0 15.2 16.7 17.0 17.2 17.4 17.9 18.2 18.4 18.4 18.4 18.5 18.5 18.5 18.5 18.5 18.5 18.6 18.6 18.7 18.8 18.9 19.1 19.2 19.3 19.5 19.7 19.9 20.0 20.1 20.2 20.3 20.3 20.2 19.9 0.07 0.16 0.31 0.59 2.15 3.96 5.73 6.84 7.06 7.28 7.41 7.81 8.12 8.29 8.34 8.35 8.37 8.36 8.37 8.38 8.43 8.48 8.53 8.71 8.81 8.97 9.11 9.25 9.43 9.62 9.84 10.2 10.3 10.4 10.3 10.2 9.88 Phase -176 -123 -150 -173 -101 -116 -131 -145 -161 -176 -50.0 -46.1 -44.0 -42.9 -42.1 -41.5 -42.1 -44.7 -49.0 -53.7 -58.0 -60.6 -61.9 -64.4 -64.4 -63.1 -63.5 -64.4 -64.4 -64.2 -62.1 -63.3 -64.4 -62.1 -61.9 -62.1 -62.9 -64.1 -61.2 -60.0 -61.8 -62.1 -61.9 -62.7 -61.9 -61.9 -60.0 -60.9 -64.1 -67.5 -67.5 0.01 0.01 0.01 0.01 0.01 0.01 Phase -132 -179 -123 -160 -178 -179 -169 -1.5 -2.5 -3.6 -4.5 -5.3 -6.7 -9.6 -15.2 -21.8 -24.8 -26.4 -30.0 -34.5 -28.3 -23.8 -21.2 -19.3 -18.1 -17.1 -16.3 -15.7 -15.1 -14.7 -14.4 -14.2 -14.0 -13.7 -13.6 -13.4 -13.3 -13.3 -13.2 -13.2 -13.3 -13.4 -13.6 -14.0 -14.1 -14.6 -15.1 -15.5 0.85 0.75 0.66 0.54 0.46 0.33 0.17 0.08 0.06 0.05 0.03 0.02 0.04 0.06 0.09 0.11 0.12 0.14 0.15 0.16 0.18 0.18 0.19 0.21 0.21 0.21 0.22 0.22 0.22 0.22 0.22 0.21 0.21 0.19 0.18 0.17 Phase -104 -118 -136 -158 -173 -164 -155 -102 -101 -105 -110 -115 -120 -126 -131 -136 -140 -145 -150 -154 -159 -166 -171 -177
Note: Data obtained from on-wafer measurements.
Biasing Operation AMMC-5620 normally biased with single positive drain supply connected bond pads shown Figure recommended supply voltage which results (typical). ground wires required because ground connections made with plated through-holes backside device. Refer Absolute Maximum Ratings table allowed thermal conditions.
Assembly Techniques backside AMMC-5620 chip ground. microstripline applications, chip should attached directly ground plane (e.g., circuit carrier heatsink) using electrically conductive epoxy[1]. best performance, topside MMIC should brought same height circuit surrounding This accomplished mounting gold plated metal shim (same length width MMIC) under chip, which correct thickness make chip adjacent circuit coplanar. amount epoxy used chip shim attachment should just enough provide thin fillet around bottom perimeter chip shim. ground plane should free residue that jeopardize electrical mechanical attachment. location bond pads shown Figure Note that input output ports Ground-Signal-Ground configuration. connections should kept short reasonable minimize performance degradation undesirable series inductance. single bond wire sufficient signal connections, however double-bonding with gold wire gold mesh[2] recommended best performance, especially near high frequency range. Thermosonic wedge bonding preferred method wire attachment bond pads. Gold mesh attached using round tracking tool tool force approximately grams with ultrasonic power roughly duration guided wedge ultrasonic power level used wire. recommended wire bond stage temperature Caution should taken exceed Absolute Maximum Rating assembly temperature time. chip thick should handled with care. This MMIC exposed bridges surface should handled edges with custom collet pick with vacuum center.) This MMIC also static sensitive handling precautions should taken.
Notes: Ablebond 84-1 silver epoxy recommended. Buckbee-Mears Corporation, Paul, 800-262-3824
Feedback network
Feedback network
Feedback network
Output
Matching Matching
Input
Matching
Matching
Figure AMMC-5620 Schematic
power supply chip capacitor
Gold plated shim
Input
AMMC-5620
Output
Figure AMMC-5620 Assembly Diagram
(VDD)
1010
(RFIn)
(RFOut)
1315
1410
Figure AMMC-5620 Bond Locations. (dimensions microns)
Ordering Information: AMMC-5620-W10 devices tray AMMC-5620-W50 devices tray
product information complete list distributors, please site: www.avagotech.com Avago, Avago Technologies, logo trademarks Avago Technologies, AV02-0528EN United States other countries. Data subject change. Copyright 2007 Avago Technologies Limited. rights reserved. Obsoletes AV01-0222EN AV02-0528EN June 2007

High Gain Amplifier Chip Size: 1410 1010 (55.5 39.7 mils) Chip Si

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