FW340 N-Channel P-Channel Silicon MOSFETs FW340 Feature

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FW340 N-Channel P-Channel Silicon MOSFETs FW340 Feature

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Ordering number ENA0424
FW340
N-Channel P-Channel Silicon MOSFETs
FW340
Features
General-Purpose Switching Device Applications
motor drives, inverters. Composite type with N-channel MOSFET P-channel MOSFET driving from supply voltage contained single package. High-density mounting.
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW10s) Drain Current (PW100ms) Drain Current (PW10µs) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS Tstg Duty cycle1% Duty cycle1% Duty cycle1% Mounted ceramic board (2000mm2!0.8mm)1unit, PW10s Mounted ceramic board (2000mm2!0.8mm), PW10s Conditions N-channel +150 P-channel -5.5 Unit
Electrical Characteristics Ta=25°C
Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS IDSS IGSS VGS(off) RDS(on)1 RDS(on)2 RDS(on)3 ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=5A ID=5A, VGS=10V ID=3A, VGS=4.5V ID=3A, VGS=4V Symbol Conditions Ratings Unit
Marking W340
Continued next page.
SANYO Semiconductor products described contained herein have specifications that handle applications that require extremely high levels reliability, such life-support systems, aircraft's control systems, other applications whose failure reasonably expected result serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest before usingany SANYO Semiconductor products described contained herein such applications. SANYO Semiconductor assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor products described contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82306 62006PA TB-00002412 A0424-1/6
FW340
Continued from preceding page.
Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) td(off) ID=-1mA, VGS=0V VDS=-30V, VGS=0V VGS=±16V, VDS=0V VDS=-10V, ID=-1mA VDS=-10V, ID=-5A ID=-5A, VGS=-10V ID=-3A, VGS=-4.5V ID=-3A, VGS=-4V VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz specified Test Circuit. specified Test Circuit. specified Test Circuit. specified Test Circuit. VDS=-10V, VGS=-10V, ID=-5A VDS=-10V, VGS=-10V, ID=-5A VDS=-10V, VGS=-10V, ID=-5A IS=-5A, VGS=0V -1.2 1000 16.5 -0.85 -1.5 -2.6 Symbol Ciss Coss Crss td(on) td(off) Conditions VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz specified Test Circuit. specified Test Circuit. specified Test Circuit. specified Test Circuit. VDS=10V, VGS=10V, ID=5A VDS=10V, VGS=10V, ID=5A VDS=10V, VGS=10V, ID=5A IS=5A, VGS=0V Ratings Unit
Package Dimensions
unit 7005-003
Electrical Connection
0.43
Source1 Gate1 Source2 Gate2 Drain2 Drain2 Drain1 Drain1 SANYO SOP8
Source1 Gate1 Source2 Gate2 Drain2 Drain2 Drain1 Drain1
view
0.595
1.27
A0424-2/6
FW340
Switching Time Test Circuit [N-channel]
ID=5A RL=3 VDD=15V
[P-channel]
-10V
VOUT
VDD= -15V
RL=3
PW=10µs D.C.1%
PW=10µs D.C.1%
VOUT
FW340
FW340
10.0V 8.0V 6.0V
[Nch]
[Nch] VDS=10V
4.0V
Drain Current,
Drain Current,
2.5V
VGS=2.0V
IT04957
Drain-to-Source Voltage,
RDS(on)
Gate-to-Source Voltage,
Ta=7 25°C
IT04958
[Nch] Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on)
RDS(on)
[Nch]
Static Drain-to-Source On-State Resistance, RDS(on)
ID=3A
=4.0
=4.5
D=5A
0.0V
Gate-to-Source Voltage,
IT11087
Ambient Temperature,
IT11088
A0424-3/6
FW340
VDS=10V
[Nch]
0.01 0.001
Forward Transfer Admittance,
[Nch] VGS=0V
0.01
Source Current,
Drain Current,
IT11089
75°C 25°C -25°
IT04962
Time
[Nch]
Switching Time, Time
VDD=15V VGS=10V Ciss, Coss, Crss
1000
Ciss, Coss, Crss
Ciss
Diode Forward Voltage,
[Nch] f=1MHz
(off)
Coss
Crss
td(on)
IT04963
IT11090
Drain Current,
Drain-to-Source Voltage,
[Nch]
[Nch] PW10µs
Gate-to-Source Voltage,
VDS=10V ID=5A Drain Current,
IDP=20A ID=5A
Operation this area limited RDS(on).
0.01
Ta=25°C Single pulse Mounted ceramic board (2000mm2!0.8mm) 1unit
Total Gate Charge,
-5.0
IT11091
Drain-to-Source Voltage,
IT11092
[Pch]
[Pch]
VDS= -10V
-4.0
Drain Current,
Drain Current,
-3.0
-3.0V
-1.0
VGS= -2.5V
-0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0
Drain-to-Source Voltage,
IT07390
Gate-to-Source Voltage,
Ta=7 -25°
-2.0
IT11093
A0424-4/6
FW340
RDS(on)
[Pch] Ta=25°C
RDS(on)
[Pch]
Static Drain-to-Source On-State Resistance, RDS(on)
Static Drain-to-Source On-State Resistance, RDS(on)
-10V -5A,
Gate-to-Source Voltage,
IT07392
Ambient Temperature,
-1.0 -0.1
IT07393
[Pch]
[Pch] VGS=0V
Forward Transfer Admittance,
VDS= -10V
25°C
-0.01
-0.1
-1.0
Drain Current,
IT11094
-0.01 -0.2
-0.4
-0.6
-25°
-0.8
Source Current,
-1.0
-1.2 IT07395
Time
VDD= -15V VGS= -10V
td(off)
[Pch]
Ciss, Coss, Crss
Diode Forward Voltage,
[Pch] f=1MHz
Switching Time, Time
Ciss, Coss, Crss
1000
Ciss
Coss
Crss
-0.1
td(on)
-1.0
Drain Current,
IT07396
IT07397
Drain-to-Source Voltage,
-1.0 -0.1
VDS= -10V
[Pch]
IDP= -20A
[Pch] PW10µs
Gate-to-Source Voltage,
Drain Current,
Operation this area limited RDS(on).
-0.01 -0.1
Ta=25°C Single pulse Mounted ceramic board (2000mm2!0.8mm) 1unit
-1.0
Total Gate Charge,
IT07398
Drain-to-Source Voltage,
IT11095
A0424-5/6
FW340
Allowable Power Dissipation(FET
PD(FET PD(FET
Mounted ceramic board PW10s
[Nch, Pch]
Allowable Power Dissipation,
(2000mm2!0.8mm),
[Nch, Pch] Mounted ceramic board (2000mm2!0.8mm), PW10s
Allowable Power Dissipation(FET
IT11096
Ambient Temperature,
IT11097
Note usage Since FW340 MOSFET product, please avoid using this device vicinity highly charged objects.
Specifications SANYO Semiconductor products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer's products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer's products equipment. SANYO Semiconductor Co., Ltd. strives supply high-quality high-reliability products. However, semiconductor products fail with some probability. possible that these probabilistic failures could give rise accidents events that could endanger human lives, that could give rise smoke fire, that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor products (including technical data,services) described contained herein controlled under applicable local export control laws regulations, such products must exported without obtaining export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written permission SANYO Semiconductor Co., Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. SANYO Semiconductor believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties.
This catalog provides information June, 2006. Specifications information herein subject change without notice.
A0424-6/6

FW340 N-Channel P-Channel Silicon MOSFETs FW340 Feature

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