Complementary Power Transistors Collector-Emitter sustaining volt

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Complementary Power Transistors Collector-Emitter sustaining volt

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2N6109, 6290
Complementary Power Transistors
Collector-Emitter sustaining voltageVCEO(sus) (Minimum) 2N6109, 2N6290. current gain specified Amperes (Minimum) 7.0A 2N6109, 2N6290. Complementary Silicon Plastic Power Transistors.
Dimensions Base Collector Emitter Collector (Case).
Minimum 14.68 9.78 5.01 13.06 3.57 2.42 1.12 0.72 4.22 1.14 2.20 0.33 2.48 3.70
Maximum 15.31 10.42 6.52 14.62 4.07 3.66 1.36 0.96 4.98 1.38 2.97 0.55 2.98 3.90
2N6109 Ampere
2N6290
Complementary Silicon Power Transistors Volts Watts
TO-220
Dimensions Millimetres
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2N6109, 6290
Complementary Power Transistors
Maximum Ratings
Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous -Peak Base Current Total Power Dissipation 25°C Derate above 25°C Operating Storage Junction Temperature Range Symbol VCEO VCBO VEBO TSTG 2N6109 2N6290 0.32 +150 W/°C Unit
Thermal Characteristic
Characteristic Thermal Resistance Junction Case Symbol Maximum 3.125 Unit °C/W
Figure Power Derating
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2N6109, 6290
Complementary Power Transistors
Electrical Characteristics 25°C unless otherwise noted)
Parameter Characteristics Collector-Emitter Sustaining Voltage 100mA, Symbol Minimum Maximum Unit
VCEO(sus)
Collector Current (VCE 40V,
ICEO
Collector Current (VCE 60V, VBE(off) 1.5V) (VCE 50V, VBE(off) 1.5V, 125°C) Emitter Current (VEB 5.0V, Characteristics Current Gain 2.5A, 4.0V) 7.0A, 4.0V) Collector-Emitter Saturation Voltage 7.0A, 3.0A) Base-Emitter Voltage 7.0A, 4.0V) Dynamic Characteristics Current Gain-Bandwidth Product 0.5A, 4.0V, 1.0MHz) Small Signal Current Gain 0.5A, 4.0V, 50kHz) Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%. ftest.
ICEX
IEBO
VCE(sat) VBE(on)
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31/05/05 V1.0
2N6109, 6290
Complementary Power Transistors
Figure Switching Time Test Circuit Figure Turn-Off Time
must fast recovery type, example: MB05300 used above 100mA MSD6100 used below 100mA
Figure Current Gain
Figure Turn-On Time
Figure Active Region Safe Operating Area There limitations power handling ability transistor: average junction temperature second breakdown safe operating area curves indicate IC-VCE limits transistor that must observed reliable operation i.e., transistor must subjected greater dissipation than curves indicate. data Figure curve based TJ(PK) 150°C; variable depending power level. Second breakdown pulse limits valid duty cycles provided TJ(PK) 150°C. high case temperatures, thermal limitation will reduce power that handled values less than limitations imposed second breakdown.
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31/05/05 V1.0
2N6109, 6290
Complementary Power Transistors
Figure Collector Saturation Region Figure Capacitances
Figure "ON" Voltage
Figure Collector Cut-Off Region
Specifications
IC(av) maximum VCEO maximum minimum 2.5A Ptot 25°C 2N6290 Type Part Number 2N6109
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31/05/05 V1.0
2N6109, 6290
Complementary Power Transistors
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Complementary Power Transistors Collector-Emitter sustaining volt

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