Features: High Voltage: VCBO 1700V Saturation Voltage: VCE(sat) High S

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Features: High Voltage: VCBO 1700V Saturation Voltage: VCE(sat) High S

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NTE2665 Silicon Transistor Horizontal Deflection Output High Resolution Display, Color
Features: High Voltage: VCBO 1700V Saturation Voltage: VCE(sat) High Speed: 0.1s Absolute Maximum Ratings: +25°C unless otherwise specified) Collector-Base Voltage, VCBO 1700V Collector-Emitter Voltage, VCEO 800V Emitter-Base Voltage, VEBO Collector Current, Continuous Pulsed Base Current, Collector Power Dissipation, 220W Operating Junction Temperature, +150°C Storage Temperature Range, Tstg -55° +150°C Note Using continuously under heavy loads (e.g. application high temperature/current/voltage significant change temperature, etc.) cause this product decrease reli ability significantly even operating conditions (i.e. operating temperature/current/voltage, etc.) within "Absolute Maximum Ratings". Electrical Chracteristics: +25°C unless otherwise specified)
Parameter Collector Cutoff Current Emitter Cutoff Current Current Gain Symbol ICBO IEBO Test Conditions 1700V, Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Outptut Capacitance VCE(sat) VBE(sat) 22A, 5.5A 22A, 5.5A 10V, 100mA 10V, 1MHz 12.5 25.0 Unit
Collector-Emitter Breakdown Voltage V(BR)CEO 10mA,
Electrical Chracteristics (Cont'd): +25°C unless otherwise specified)
Parameter Switching Time Storage Time Fall Time Storage Time Fall Time tstg tstg 10A, (end) 1.4A, 64kHz (end) 1.2A, 130kHz Symbol Test Conditions Unit
0.10 0.15
.807(20.5) .236 (6.0)
.205 (5.2)
1.024 (26.0) .130 (3.3)
.098 (2.5)
.787 (20.0)
.215 (5.45)
.039(1.0)
.023 (0.6)
Note: Pin2 connected heat sink

Features: High Voltage: VCBO 1700V Saturation Voltage: VCE(sat) High S

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