Dimensions TO-220AC C(TAB) A=Anode, C=Cathode, TAB=Cathode VRSM 1
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MUR820, MUR860, MUR8100
Dimensions TO-220AC C(TAB)
A=Anode, C=Cathode, TAB=Cathode VRSM 1000 VRRM 1000
MUR820 MUR860 MUR8100
Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055
Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39
Symbol IFRMS IFAVM IFRM
Test Conditions TVJ=TVJM TC=115oC; rectangular, d=0.5 tp<10us; rep. rating, pulse width limited TVJM TVJ=45oC t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine
Maximum Ratings -40.+150 -40.+150
Unit
IFSM
TVJ=150oC TVJ=45oC
TVJ=150oC
TVJM Tstg Ptot Weight TC=25oC Mounting torque
0.4.0.6
MUR820, MUR860, MUR8100
Symbol
Test Conditions TVJ=25oC; VR=VRRM TVJ=25oC; VR=0.8.VRRM TVJ=125oC; VR=0.8.VRRM IF=8A; TVJ=150oC TVJ=25oC power-loss calculations only TVJ=TVJM
Characteristic Values typ. max. 0.98 28.7
Unit
RthJC RthCK RthJA
IF=1A; -di/dt=50A/us; VR=30V; TVJ=25oC VR=350V; IF=8A; -diF/dt=64A/us; L<0.05uH; TVJ=100
FEATURES
International standard package JEDEC TO-220AC Planar passivated chips Very short recovery time Extremely switching losses IRM-values Soft recovery behaviour
APPLICATIONS
Antiparallel diode high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode converters motor control circuits Rectifiers switch mode power supplies (SMPS) Inductive heating melting Uninterruptible power supplies (UPS) Ultrasonic cleaners welders
ADVANTAGES
High reliability circuit operation voltage peaks reduced protection circuits noise switching losses Operating lower temperature space saving reduced cooling
MUR820, MUR860, MUR8100
Fig. Forward current versus voltage drop.
Fig. Recovery charge versus -diF/dt.
Fig. Peak reverse current versus -diF/dt.
Fig. Dynamic parameters versus junction temperature.
Fig. Recovery time versus -diF/dt.
Fig. Peak forward voltage versus diF/dt.
Fig. Transient thermal impedance junction case.
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