Dimensions (1mm 0.0394") Absolute Maximum Ratings Symbol IGBT VCE
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SID145S12
Dimensions (1mm 0.0394")
Absolute Maximum Ratings Symbol IGBT VCES ICRM VGES TVj,(Tstg) Conditions
25oC, unless otherwise specified
Values 1200
Units
25(80) 25(80)oC, =1ms
TOPERATION Tstg
190(135) 380(270)
40.+150(125)
4000 130(90) 380(270) 1100 130(90) 350(260) 1100
1min Visol Inverse Diode IFRM
25(80)oC 25(80)oC, =1ms
IFSM =10ms; sin.;Tj=150oC Freewheeling diode 25(80)oC IFRM 25(80)oC, =1ms IFSM =10ms; sin.;Tj=150oC
SID145S12
Characteristics
Symbol IGBT VGE(th) ICES VCE(TO) VCE(sat) Cies Coes Cres RCC'+EE' Conditions VCE, =2mA VCES; 25(125)oC 25(125)oC 15V, 25(125)oC =100A; 15V; chip level under following conditions 25V, 1MHz 25oC, unless otherwise specified min. typ. max. Units
td(on) td(off) Eon(Eoff) Inverse Diode under following conditions: 100A; 25(125)oC V(TO) 25(125)oC 25(125)oC IRRM 100A; 125oC di/dt 3500A/us under following conditions: 100A; 25(125)oC V(TO) 25(125)oC 25(125)oC IRRM 100A; 25(125)oC di/dt A/us Thermal Characteristics Rth(j-c) IGBT Rth(j-c)D Inverse Diode Rth(c-s) module Mechanical Data heatsink terminals
res., terminal-chip 25(125)oC under following conditions: 600V, 100A RGon RGoff 125oC
1(0.9) 1.15(1.05) 9(12) 12(15) 1.9(2.1) 2.35(2.55) 0.75(1) 11.5(9.5) 2(1.8) 2.1(1.8) 0.165 0.36 0.05
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