Dual P-channel Trench MOSFET Portable Equipment Application. Note

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Dual P-channel Trench MOSFET Portable Equipment Application. Note

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SUF3001
Dual P-channel Trench MOSFET
Portable Equipment Application. Notebook Application. Features
VGS(th) VGS(th)=1.0~3.0V Small footprint small package (ON) (ON) =66m
Ordering Information
Type SUF3001 Marking SUF3001 Package Code SOP-8
Outline Dimensions
5.88~6.18 3.70~3.90 0.27 Max. 0.52 Max.
unit
3.81 Typ. 0.27 Max. 0.46 Min.
Block Diagram
1.24~1.44
1.27 Typ.
4.81~5.01
Connections Source Gate Source Gate Drain Drain Drain Drain
KSD-T7F004-000
SUF3001
Absolute maximum ratings
Characteristic
Drain-source voltage Gate-source voltage Drain current (DC) Drain current (Pulsed)
(Ta=25°C)
Symbol
VDSS VGSS Tstg
Rating
-5.3 -21.2 -5.3 -5.3 -55~150
Unit
Total Power dissipation
Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range
Limited maximum junction temperature Device mounted glass-epoxy board
Characteristic
Thermal resistance Junction-ambient
Symbol
Rth(J-a)
Typ.
62.5
Unit
KSD-T7F004-000
SUF3001
Electrical Characteristics
Characteristic
Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
(Ta=25°C)
Symbol
BVDSS VGS(th) IDSS IGSS RDS(ON) Ciss Coss Crss td(on) td(off)
Test Condition
ID=250A, VGS=0 ID=250A, VDS=VGS VDS=-30V, VGS=0V VDS=0V, VGS=±20V VGS=-10V, ID=-2.7A VGS=-5.0V, ID=-2.7A VDS=-5V, ID=-5.3A VGS=0V, VDD=-10V, f=1MHz
Min.
-1.0
Typ.
Max.
-3.0 ±100
Unit
VDD=-15V, ID=-5.3A RG=10
VDD=-15V, VGS=-5V ID=-5.3A
Source-Drain Diode Ratings Characteristics
Characteristic
Source current Source current(Plused) Forward voltage Reverse recovery time Reverse recovery charge
(Ta=25°C)
Symbol
Test Condition
Integral reverse diode MOSFET VGS=0V, IS=-1.5A Is=-1.5A diS/dt=100A/us
-1.5 -6.0 -1.2
Unit
Note Repetitive Rating Pulse Width Limited Maximum Junction Temperature L=2.0mH, IAS=-5.0A, VDD=-15V, RG=25 Pulse Test Pulse Width 300us, Duty cycle Essentially independent operating temperature
KSD-T7F004-000
SUF3001
Electrical Characteristic Curves
Fig.
Fig.
Fig. RDS(on)
Fig.
Fig. Capacitance
Fig.
KSD-T7F004-000
SUF3001
Fig. VDSS Fig. RDS(on)
Fig.
Fig. Safe Operating Area
KSD-T7F004-000
SUF3001
Fig. Gate Charge Test Circuit Waveform
Fig. Resistive Switching Test Circuit Waveform
Fig. Test Circuit Waveform
KSD-T7F004-000
SUF3001
Fig. Diode Reverse Recovery Time Test Circuit Waveform
KSD-T7F004-000
SUF3001
Corp. products intended components general electronic equipment (Office communication equipment, measuring equipment, home appliance, etc.). Please make sure that consult with before these Corp. products equipments which require high quality reliability, equipments which could have major impact welfare human life(atomic energy control, airplane, spaceship, transportation, combustion control, types safety device, etc.). Corp. cannot accept liability damage which occur case these Corp. products were used mentioned equipments without prior consultation with Corp. Specifications mentioned this publication subject change without notice.
KSD-T7F004-000

Dual P-channel Trench MOSFET Portable Equipment Application. Note

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