N-channel Trench MOSFET Portable Equipment Application. Notebook
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STK001SF
N-channel Trench MOSFET
Portable Equipment Application. Notebook Application. Features
VGS(th) VGS(th)=0.6~1.2V Small footprint small package (ON) (ON)= (Typ.)
Ordering Information
Type STK001SF Marking Package Code SOT-23F
Outline Dimensions
unit
2.30~2.50 1.50~1.70
2.80~3.00 1.90 Typ.
Block Diagram
0.45 Max.
0.10 Max.
0.20 Max.
0.80~1.00
Connections Gate Source Drain
STK001SF
Absolute maximum ratings
Characteristic
Drain-source voltage Gate-source voltage Drain current (DC) Drain current (Pulsed)
(Ta=25°C)
Symbol
VDSS VGSS Tstg
Rating
12.8 0.35 -55~150
Unit
Total Power dissipation
Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range
Limited maximum junction temperature Device mounted glass-epoxy board
Characteristic
Thermal resistance Junction-ambient
Symbol
Rth(J-a)
Typ.
Unit
STK001SF
N-CH Electrical Characteristics
Characteristic
Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
(Ta=25°C)
Symbol
BVDSS VGS(th) IDSS IGSS RDS(ON) Ciss Coss Crss td(on) td(off)
Test Condition
ID=250A, VGS=0 ID=250A, VDS=VGS VDS=20V, VGS=0V VDS=0V, VGS=±12V VGS=4.5V, ID=1.6A VGS=2.5V, ID=1.6A VDS=5V, ID=3.2A VGS=0V, VDS=10V, f=1MHz
Min.
Typ.
10.5
Max.
Unit
VDD=10V, ID=3.2A RG=10
VDD=10V, VGS=4.5V ID=3.2A
Source-Drain Diode Ratings Characteristics
Characteristic
Source current Sourcecurrent(Plused) Forward voltage Reverse recovery time Reverse recovery charge
(Ta=25°C)
Symbol
Test Condition
Integral reverse diode MOSFET VGS=0V, IS=0.5A Is=3.2A, VDD=10V dIS/dt=70A/us
Unit
Note Repetitive Rating Pulse Width Limited Maximum Junction Temperature L=3.0mH, IAS=3.8A, VDD=10V, RG=25 Pulse Test Pulse Width 300us, Duty cycle Essentially independent operating temperature
STK001SF
N-CH Electrical Characteristic Curves
Fig.
Fig.
Fig. RDS(on)
Fig.
Fig. Capacitance
Fig.
STK001SF
Fig. VDSS Fig. RDS(on)
Fig.
Fig. Safe Operating Area
STK001SF
Fig. Gate Charge Test Circuit Waveform
Fig. Resistive Switching Test Circuit Waveform
Fig. Test Circuit Waveform
STK001SF
Fig. Diode Reverse Recovery Time Test Circuit Waveform
STK001SF
Corp. products intended components general electronic equipment (Office communication equipment, measuring equipment, home appliance, etc.). Please make sure that consult with before these Corp. products equipments which require high quality reliability, equipments which could have major impact welfare human life(atomic energy control, airplane, spaceship, transportation, combustion control, types safety device, etc.). Corp. cannot accept liability damage which occur case these Corp. products were used mentioned equipments without prior consultation with Corp. Specifications mentioned this publication subject change without notice.
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