AO3438 uses advanced trench technology provide excellent RDS(ON), gate

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AO3438 uses advanced trench technology provide excellent RDS(ON), gate

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AO3438 N-Channel Enhancement Mode Field Effect Transistor
AO3438 uses advanced trench technology provide excellent RDS(ON), gate charge operation with gate voltages 1.8V. This device suitable load switch applications. AO3438 AO3438L eletrically identical. -RoHs Compliant -AO3438L Halogen Free
RDS(ON) RDS(ON) RDS(ON) 4.5V) 4.5V) (VGS 2.5V) (VGS 1.8V)
TO-236 (SOT-23) View
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation
Maximum
Units
TA=25°C TA=70°C TA=25°C TA=70°C TSTG
Junction Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead
Symbol Steady-State Steady-State
Units °C/W °C/W °C/W
Alpha Omega Semiconductor, Ltd.
AO3438
Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current Conditions ID=250µA, VGS=0V VDS=20V, VGS=0V TJ=55°C VDS=0V, VGS=±8V VDS=VGS ID=250µA VGS=4.5V, VDS=5V VGS=4.5V, ID=3A Static Drain-Source On-Resistance TJ=125°C VGS=2.5V, ID=2.8A VGS=1.8V, ID=2.5A Forward Transconductance VDS=5V, ID=3A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=10V, ID=3A VGS=5V, VDS=10V, RL=3.3, RGEN=6 IF=3A, dI/dt=100A/µs Units
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Total Gate Charge Gate Source Charge tD(on) tD(off) Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=3A, dI/dt=100A/µs
value measured with device mounted FR-4 board with 2oz. copper, still environment with TA=25°C. value given application depends user's specific board design. current rating based thermal resistance rating. Repetitive rating, pulse width limited junction temperature. thermal impedence from junction lead lead ambient. static characteristics Figures obtained using <300 pulses, duty cycle 0.5% max. These tests performed with device mounted curve provides single pulse rating. Rev1 March 2008
FR-4 board with 2oz. Copper, still environment with A=25°C.
THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
AO3438
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
4.5V 2.5V VDS=5V
VGS=1.5V
ID(A)
125°C 25°C
(Volts) Figure On-Region Characteristics Normalized On-Resistance
VGS(Volts) Figure Transfer Characteristics VGS=1.8V ID=2A VGS=2.5V ID=2.8A
RDS(ON) VGS=1.8V VGS=2.5V VGS=4.5V Figure On-Resistance Drain Current Gate Voltage ID=3A
VGS=4.5V ID=3A
Temperature (°C) Figure On-Resistance Junction Temperature 1E+01 1E+00
RDS(ON)
1E-01 125°C
125°C
1E-02 25°C 1E-03
25°C (Volts) Figure On-Resistance Gate-Source Voltage 1E-04 1E-05 (Volts) Figure Body-Diode Characteristics
Alpha Omega Semiconductor, Ltd.
AO3438
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
(Volts) (nC) Figure Gate-Charge Characteristics VDS=10V ID=3A Capacitance (pF)
Ciss
Coss
Crss
(Volts) Figure Capacitance Characteristics
100.00
TJ(Max)=150°C TA=25°C 10µs 100µ
1000
TJ(Max)=150°C TA=25°C
10.00 (Amps)
1.00
RDS(ON) limited 10ms 0.1s
Power
0.10
0.01 (Volts) Figure Maximum Forward Biased Safe Operating Area (Note
0.00001
0.001
1000
Pulse Width Figure Single Pulse Power Rating Junction-toAmbient (Note
Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=90°C/W
descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.01 Single Pulse 0.001 0.00001
0.0001
0.001
0.01
1000
Pulse Width Figure Normalized Maximum Transient Thermal Impedance (Note
Alpha Omega Semiconductor, Ltd.

AO3438 uses advanced trench technology provide excellent RDS(ON), gate

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