REJ03G0164-0300 Rev.3.00 2007 on-resistance RDS(on) -4.5 High spe

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REJ03G0164-0300 Rev.3.00 2007 on-resistance RDS(on) -4.5 High spe

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HAT1069C
REJ03G0164-0300 Rev.3.00 2007
on-resistance RDS(on) -4.5 High speed switching Capable gate drive High density mounting
Outline
RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6)
Index band Source Drain Drain Drain Drain Gate
Absolute Maximum Ratings
25°C)
Item Drain source voltage Gate source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID(pulse)Note1 PchNote2 Tstg Ratings +150 Unit
Notes: duty cycle When using grass epoxy board. (FR4
REJ03G0164-0300 Rev.3.00 2007 Page
HAT1069C
Electrical Characteristics
25°C)
Item Drain source breakdown voltage Gate source breakdown voltage Gate source leak current Zero gate voltage drain current Gate source cutoff voltage Static drain source state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate source charge Gate drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Notes: Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) td(off) -0.3 1380 -0.8 -1.2 -1.1 Unit Test Conditions ±100 ±6.4 -1.5 -4.5 -1.5 -2.5 -1.5 -1.8 -1.5 -4.5 -1.5 0Note3
REJ03G0164-0300 Rev.3.00 2007 Page
HAT1069C
Main Characteristics
Power Temperature Derating
1600 -100
Test Condition: When using glass epoxy board (FR4
Maximum Safe Operation Area
25°C shot Pulse
Channel Dissipation (mW)
1200
Drain Current
-0.1 Operation this area limited RDS(on) -0.01 -0.1
-100
Ambient Temperature (°C)
Drain Source Voltage
Note When using glass epoxy board (FR4
Typical Output Characteristics
-4.5 -2.5 -2.2
Typical Transfer Characteristics
Pulse Test
Drain Current
Drain Current
-1.8
Pulse Test
75°C 25°C -25°C
Drain Source Voltage Drain Source Saturation Voltage Gate Source Voltage
Drain Source Voltage VDS(on) (mV) Drain Source State Resistance RDS(on)
-250 25°C -200 -150 -4.0
Gate Source Voltage
Static Drain Source State Resistance Drain Current
1000 Pulse Test 25°C -2.5 -1.8
-100 -1.5 -1.0
-4.5
-0.1
Gate Source Voltage
Drain Current
REJ03G0164-0300 Rev.3.00 2007 Page
HAT1069C
Static Drain Source State Resistance Temperature
Forward Transfer Admittance |yfs| Drain Source State Resistance RDS(on)
Pulse Test -1.8 -1.5 -2.5 -4.5 -1.5 -1.5 Pulse Test
Forward Transfer Admittance Drain Current
-25°C
75°C 25°C
-0.1 -0.3
Case Temperature (°C)
Drain Current
Typical Capacitance Drain Source Voltage
Ciss 1000 Coss
Dynamic Input Characteristics
Drain Source Voltage
-10,
Crss
Gate Charge (nc)
Drain Source Voltage
Switching Characteristics
1000
Reverse Drain Current Source Drain Voltage
Switching Time (ns)
td(off) td(on)
Reverse Drain Current
-4.5
Pulse Test
-0.1
25°C -0.4 -0.8 -1.2 -1.6 -2.0
-100
Drain Current
Source Drain Voltage
REJ03G0164-0300 Rev.3.00 2007 Page
Gate Source Voltage
10000
Capacitance (pF)
HAT1069C
Package Dimensions
Package Name CMFPAK-6 JEITA Package Code RENESAS Code PWSF0006JA-A Previous Code CMFPAK-6 CMFPAK-6V MASS[Typ.] 0.0065g
Reference Symbol
Dimension Millimeters
Pattern terminal position areas
Section
0.15 2.05 0.15
0.15 0.65
0.01 0.79 0.25 2.15 0.45 0.05 0.05 0.35
1.65
Ordering Information
Part Name HAT1069C-EL-E Quantity 3000 Taping Shipping Container
REJ03G0164-0300 Rev.3.00 2007 Page
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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2007. Renesas Technology Corp., rights reserved. Printed Japan.
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REJ03G0164-0300 Rev.3.00 2007 on-resistance RDS(on) -4.5 High spe

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