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Thermal Model Parameters DESCRIPTION parametric values thermal mo


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Si6968BEDQ_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 22.0425 33.2402 11.6883 53.0290 Ambient 54.9657 23.3037 1.6847 1.4307 Case Case Foot 23.5742 33.2557 10.4624 2.7077 Foot 58.2147 11.8325 3.0211 289.3372
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 74847 Revision: 11-Jul-07
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Si6968BEDQ_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 12.0591 26.1631 31.2811 50.4967 Ambient 1.3325 11.2274 15.0487 1.4432
Case Case
Foot 4.6749 13.9626 19.6217 31.7408 Foot 311.5387 2.8693 3.6756 18.0470
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
www.vishay.com
Document Number: 74847 Revision: 11-Jul-07
Si6968BEDQ_RC
Document Number: 74847 Revision: 11-Jul-07
www.vishay.com

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