SiGe Transistor SOT-89 Unit Applications wide band
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THN5702F
SiGe Transistor
SOT-89
Unit
Applications
wide band amplifier
Features
Medium power(800mW, application Power gain MHz, MHz, MHz, MHz, Output power POUT POUT POUT POUT
Configuration
Base Emitter Collector Emitter
Absolute Maximum Ratings
Parameter Collector Base Breakdown Voltage Collector Emitter Breakdown Voltage Emitter Base Breakdown Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol BVCBO BVCEO BVEBO Ptot Tstg Ratings Unit
Thermal Characteristics
Symbol Parameter Thermal Resistance from Junction Ambient
THN5702F
Value Unit
Electrical Characteristics
Parameter Collector Cut-off Current Symbol ICBO ICEO Emitter Cut-off Current Current Gain Power Gain IEBO Test Conditions mA(RF off), MHz, PIN=0dBm mA(RF off), MHz, PIN=0dBm mA(RF off), MHz, PIN=0dBm mA(RF off), MHz, PIN=0dBm Output Power POUT mA(RF off), MHz, PIN=15dBm mA(RF off), MHz, PIN=15dBm mA(RF off), MHz, PIN=15dBm mA(RF off), MHz, PIN=10dBm Reverse Transfer Capacitance Min. Typ. Max. Unit
Classification
Marking Value
THN5702F
Typical Characteristics unless otherwise specified)
Collector Current Base Emitter Voltage
Reverse Transfer Capacitance Collector Base Voltage
Reverse Transfer Capacitance, (pF)
Collector Current, [mA]
Base Emitter Voltage,
Collector Base Voltage,
Current Gain Collector Current
Collector Current Collector Emitter Voltage
Collector Current,
Current Gain,
0.01
Collector Current,
Collector Emitter Voltage,
THN5702F
Application Information
Operation Mode class-AB (MHz) POUT (dBm) 29.0 (dB) 14.0 54.9
Output Power Power Gain Input Power
MHz, POUT
Collector Current Power Added Efficiency Input Power
MHz,
Power Gain, (dB)
Input Power, (dBm)
Input Power, (dBm)
Operation Mode class-AB
(MHz)
POUT (dBm) 31.4
(dB) 16.4
43.2
Output Power Power Gain Input Power
MHz,
Collector Current Power Added Efficiency Input Power
MHz,
Output Power, POUT (dBm)
Collector Current,
POUT
Input Power, (dBm)
Input Power, (dBm)
Power Added Efficiency,
Power Gain, (dB)
Power Added Efficiency,
Output Power, POUT (dBm)
Collector Current,
THN5702F
Application Information
Operation Mode class-AB (MHz) POUT (dBm) 30.0 (dB) 15.0 50.8
Output Power Power Gain Input Power
MHz,
Collector Current Power Added Efficiency Input Power
MHz,
Output Power, POUT (dBm)
Collector Current,
POUT
Input Power, (dBm)
Input Power, (dBm)
Output Power Power Gain Input Power
MHz,
Collector Current Power Added Efficiency Input Power
MHz,
Output Power, POUT (dBm)
Collector Current,
POUT
Input Power, (dBm)
Input Power, (dBm)
Power Added Efficiency,
Power Gain, (dB)
Power Added Efficiency,
Power Gain, (dB)
THN5702F
Application Information
Operation Mode class-AB (MHz) POUT (dBm) (dB)
Output Power Power Gain Input Power
MHz,
Collector Current Power Added Efficiency Input Power
Power Gain, (dB)
MHz,
Collector Efficiency,
Output Power, POUT (dBm)
Collector Current,
POUT
Input Power, (dBm)
Input Power, (dBm)
Output Power Power Gain Input Power
MHz, POUT
Collector Current Power Added Efficiency Input Power
MHz,
Input Power, (dBm)
Input Power, (dBm)
Power Added Efficiency,
Output Power, POUT (dBm)
Collector Current,
Power Gain, (dB)
THN5702F
Application Information
Operation Mode class-AB (MHz) POUT (dBm) (dB)
Output Power Power Gain Input Power
MHz,
Collector Current Power Added Efficiency Input Power
MHz,
POUT
Input Power, (dBm)
Input Power, (dBm)
Output Power Power Gain Input Power
MHz, POUT
Collector Current Power Added Efficiency Input Power
MHz,
Input Power, (dBm)
Input Power, (dBm)
Power Added Efficiency,
Output Power, POUT (dBm)
Collector Current,
Power Gain, (dB)
Power Added Efficiency,
Output Power, POUT (dBm)
Collector Current,
Power Gain, (dB)
THN5702F
Test Circuit Schematic Diagram MHz, 434MHz
W=1.3 L=16 W=1.3 L=31
W=1.3 L=32
W=1.3 L=6.8
W=1.3 L=1.8
Evaluation Board MHz,
Notes
glass epoxy: dielectric constant 4.5, thickness Evaluation board dimension
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