Operation Modes (Proximity Barrier) External Synchronisation Barrier M

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Operation Modes (Proximity Barrier) External Synchronisation Barrier M

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OPTO DETECTOR
Operation Modes (Proximity Barrier) External Synchronisation Barrier Mode Ambient Light Rejection Adjustable Threshold Hysteresis Normally Open Normally Closed Outputs Driver Output Transistors with Short Circuit Protection Output (Source Sink) Adjustable Detection Distance Hysteresis Dirt Indication Barrier Mode Internal Zener Diode Voltage Stabilisation (optional) Maximum Supply Voltage only Depending External Elements
GENERAL DESCRIPTION
bipolar monolithic integrated circuit designed optical detection applications. adding external photodiode, LED, power transistors minimum other parts, will complete optoelectronic interface (proximity barrier) reflective optical proximity switch light barrier with external synchronisation.
APPLICATIONS
Miniaturised Light Barrier Miniaturised Reflection Light Barrier Frame Light Barrier
BLOCK DIAGRAM
oscillator :128 zener diode short circuit pulse regulation current regulation
OUTA
SYNC
amplifier
signal detection
output driver
driver
Figure Block diagram AM336
analog microelectronics
Analog Microelectronics GmbH Fahrt 55124 Mainz Internet: www.analogmicro.de Phone: Fax: Email: (0)6131/91 (0)6131/91 info@analogmicro.de
February 2005 1/12 Rev.
OPTO DETECTOR
ABSOLUTE MAXIMUM RATINGS
Supply Voltage Current Zener Diode Junction Temperature Storage Temperature Range Operating Temperature Range Tamb 6,7V 10mA 150°C 25.125°C 0.85°C
ELECTRICAL SPECIFICATIONS
Tamb 25°C, 6.5V, 560k, 4.7nF (unless otherwise noted) Parameter Supply Voltage Supply Current Oscillator Output current (low) Output current (high) Discharging resistor Proximity (P/B low): Emission pulse width Emission frequency Barrier (P/B high): Frequency oscillator freerun Synchronisation pulse width Synchronisation frequency Amplifier frequency impedance Signal detection stage Threshold comparator Threshold comparator Hysteresis comparator Filter resistor 180k 180k 200k, 200k, =180k internal 1350 internal 12.5 TSYNC fSYNC 1.25 CO), fSYNC TIRD CO), IIRD IIRD high VIRD 0.8V VIRD 6.5V internal Symbol Conditions Min. Typ. Max. Unit
analog microelectronics
February 2005 2/12
OPTO DETECTOR
Parameter Output stages Output current (on) Output current (off) Current limitation threshold driver current (low) current (high) Short circuit frequency window frequency Zener diode Zener voltage IZ=100µA ILED ILED high VCC-1.5V VCC-1.5V internal (Ro=580k, 4.7nF) VLED 0.8V VLED VCC-1.8V fSYNC 128, fSYNC 768Hz -8.0 -0.7 Symbol Conditions Min. Typ. Max.
Unit
Tabelle Electrical Specifications
BOUNDARY CONDITIONS
Parameter Oscillator pull Amplifier input current Distance resistor Hysteresis resistor Symbol IINA Min. Max. Unit
Tabelle Boundary Conditions
analog microelectronics
February 2005 3/12
OPTO DETECTOR
FUNCTIONAL DIAGRAM
Rtd1 Rtd2 PROXIMITY BARRIER :128 short circuit pulse generatation
current regulation
OUTA I(Rd,Rh)
Figure Functional circuit
FUNCTIONAL DESCRIPTION
GENERAL: designed proximity barrier applications with possibility external synchronisation (mode selection P/B). circuit contains different functional modules. Oscillator: Oscillator thresholds refer VCC/2, driver output IR-LED, emitting-pulse length duty cycle adjusted external components Amplifier: Current voltage converter, ambient light rejection.
analog microelectronics
February 2005 4/12
OPTO DETECTOR
Signal detection stage: Triggered window comparator, trigger emitting-pulse, "one pulse system" signal filtering). Output stages: antivalent outputs external Darlington transistors, short circuit protection with external resistor, periodically shutdown with duty cycle driver: Push-pull output, indicates state output stages. Z-diode: supply voltage stabilisation with external transistor, maximum system operating voltage depends only external elements (wide voltage range possible). Signal emission: Emission pulses applications with internal synchronisation generated oscillator. Signal detection: Photodiode current converted amplifier. Amplifier output (pin OUTA) connected capacitor (CIN) signal detection input (pin IND). signal applied comparators emitting pulse output state comparators taken over flip-flop Flip-flop controls output stages External synchronisation: valid recepted light pulse synchronises frequency running oscillator, pulse length period have appropriate. OSCILLATOR: frequency on-chip oscillator external resistor capacitor (pin FO). charged discharged controlled internal thresholds. oscillator frequency varies with operating modes switching oscillator thresholds. drives IR-LED external transistor. external transistor used, pull-up resistor connected. Proximity mode (P/B low): When ramp reaches upper threshold comparator emission pulse discharging capacitor triggered. This negative pulse dermined discharging time capacitor Comparator affected (output stays high level) because thresholds closer limits operating voltage than thresholds comparator Barrier mode (P/B high): setting high, comparator disabled oscillator runs means comparator lower frequency. there light pulse low, capacitor discharged when upper threshold comparator reached. valid recepted light pulse starts discharge earlier thus synchronising oscillator. synchronisation frequency upper (proximity-frequency: fOP) lower (barrier-frequency: fOB) limit.
analog microelectronics
February 2005 5/12
OPTO DETECTOR
frequency high signal detection triggered. case frequency pulsed signal could occur output stages. Connection pins: IRD, AMPLIFIER: input stage photo current transimpedance-amplifier. impedance depends input frequency reject ambient light. input current, coming from INA, appears multiplied impedance between OUTA OUTA. frequencies this impedance approximately (internal resistor) high frequencies (external resistor). Connection pins: INA, OUTA, ALR. SIGNAL DETECTION STAGE: signal input stage connected high-pass filter (CIN between OUTA IND, internal) inputs comparator (window comparator). threshold voltages hysteresis voltages generated constant current across resistors (RTA RTB). hysteresis switched output signals flip-flops. Threshold hysteresis levels determined external resistors temperature compensated internal voltage reference (VR). resistors have located
VTB- VTA+VHA
VTB=1.5 VHB=1.5*
Figure Functional diagram
analog microelectronics
February 2005 6/12
OPTO DETECTOR
close possible prevent noise. Also, case high emission-currents, blocking capacitors against useful. comparator signals taken over into flip-flops with positive slope IRD-signal. Connections pins: IND, OUTPUT STAGES: There antivalent output drivers external Darlington transistors with current limitation periodical shut down case overload (short circuit protection). output signal internal flip-flop (depending VTA) controls output drivers. They consist current sources which attached internal pull-up resistor. voltage drop resistor produced loading current, compared with internal voltage used limit loading current. When limitation occurs, external capacitor discharged reaching internal threshold both output drivers switched off. After loading capacitor discharged reaching threshold both output drivers switched off. After charging capacitor upper threshold output stages enabled again. Unused outputs have attached VCC. External Darlington transistors have used that necessary potential (VCC-2 VBE) available outputs order limit loading current. Connection pins DRIVER: push-pull driver indicates different ranges window-comparator short circuit output stages. Following conditions possible:
short circuit, input voltage effect input voltage higher than input voltage higher than VTA, smaller than input voltage smaller than
Tabelle indications Blinking frequencies LED: oscillator frequency devided oscillator frequency devided Connection pin:
analog microelectronics
February 2005 7/12
OPTO DETECTOR
PADOUT
NAME OUTA DESIGNATION driver output Detection distance adjustment Zener diode Sense input current regulation short circuit Output PNP-Darlington, normally open Output PNP-Darlington, normally close Supply voltage Hysteresis detection distance Oscillator input Detection input Ground Amplifier input Ambient light rejection Amplifier output Output PNP, IR-LED driver Mode selection: proximity, high barrier Short circuit capacitor
Tabelle Padout
analog microelectronics
February 2005 8/12
OPTO DETECTOR
AVAILABLE PINOUTS
AM336-1 OUTA AM336-2
OUTA
Figure Internal synchronisation only [Z-Diode (pin available]
Figure Internal/external synchronisation [mode selection (pin P/B) available]
Figure Chip Dimensions
DELIVERY
SO16-packaging (standard) DIL16-package only engineering samples dice blue foil
analog microelectronics
February 2005 9/12
OPTO DETECTOR
APPLICATION EXAMPLES
8.5V
BSS60
Rtd1
100k 560k
Rled Tout BSS60
Rtd2
GL360
PD480
OUTA
336-1
Figure Proximity application
5.5V 6.7V
100k OUTA Rled 560k
336-2
Tout BSS60
PD480
Figure Barrier application (without voltage stabilisation)
analog microelectronics
February 2005 10/12
OPTO DETECTOR
EXTERNAL VOLTAGE STABILISATION BOTH OUTPUTS
8.5V
Tout
AM336
Tout
Figure External Voltage Stabilisation
General application hints:
nearness emission stage with powerful pulsed current source sensitive photoamplifier require careful breadboarding (and layout) circuit. Connections should short possible. Photodiode should located closely amplifier (Pin: INA) shielded line should provided. Resistors should located closely chip should blocked against with appropriate ceramic capacitor. voltage stabilisation, maximum supply voltage only depending breakthrough-voltage external elements: Tout,
analog microelectronics
February 2005 11/12
OPTO DETECTOR
TYPICAL VALUES
Symbol RTD1 RTD2 Crh,Crd RLED TOUT BST60; Philips BST60; Philips BCX51-16; Philips Zy47: 6.8; Threshold approximation: =800 [k])2 =1.5 =1.5 =(10 VTA[V] [k]) depends photodiode-pulse-current, [min] Ipulse [max] depending used supply voltage, max. Blocking Capacitor against Perturbation, Noise 10-100nF Description SFH40x; SFH41x; SFH48x; Siemens 360; Sharp SHF21x SFH22x Siemens 480; Sharp typical; depending noise caused emission current
Value
Unit
analog microelectronics
February 2005 12/12

Operation Modes (Proximity Barrier) External Synchronisation Barrier M

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