SiGe Transistor SOT-89 Unit Applications wide band
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THN6702F
SiGe Transistor
SOT-89
Unit
Applications
wide band amplifier
Features
Medium power application (2W) Power gain MHz, Output power POUT 33.5
Configuration
Base Emitter Collector Emitter
Absolute Maximum Ratings
Parameter Collector Base Breakdown Voltage Collector Emitter Breakdown Voltage Emitter Base Breakdown Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol BVCBO BVCEO BVEBO Ptot Tstg Ratings Unit
Thermal Characteristics
Symbol Parameter Thermal Resistance from Junction Ambient
THN6702F
Value Unit
Electrical Characteristics
Parameter Collector Cut-off Current Symbol ICBO ICEO Emitter Cut-off Current Current Gain Power Gain Output Power Collector Efficiency IEBO POUT Test Conditions off), MHz, PIN=0dBm off), MHz, PIN=20dBm off), MHz, PIN=20dBm Min. 33.5 Typ. Max. Unit
Classification
Marking Value -180
THN6702F
Application Information
Operation Mode class-AB (MHz) POUT (dBm) 33.5 (dB) 13.5
Output Power, Collector Current, Collector Efficiency Input Power
1000
POUT
Input Power, (dBm)
Collector Efficiency,
Collector Current, (mA)
Output Power, POUT (dBm)
IC(set) 30mA
THN6702F
Test Circuit Schematic Diagram
W=1.3 L=16 W=1.3 L=31
W=1.3 L=32
W=1.3 L=6.8
W=1.3 L=1.8
Evaluation Board
Notes glass epoxy: dielectric constant 4.5, thickness Evaluation board dimension
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