LDMOS Transistor SOT-223 Unit Applications wide ba
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TMF8901B
LDMOS Transistor
SOT-223
Unit
Applications
wide band amplifier
Features
Power gain 12.4 IDset 14.7 IDset Output power POUT 32.4 IDset POUT 34.7 IDset Drain efficiency (typ.)
Marking
Configuration
Gate Source Drain Source
8901
Absolute Maximum Ratings
Parameter Drain Source Voltage Gate Source Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature Symbol Ptot Tstg Ratings 13.0 Unit
TMF8901B
Electrical Characteristics
Parameter Gate Source Leakage Current Drain Source Leakage Current Threshold Voltage Transconductance Drain Source Breakdown Voltage Drain Source On-Voltage Power Gain Output Power Operating Current Drain Efficiency Power Gain Output Power Operating Current Drain Efficiency Symbol IGSS IDSS BVDSS VDSon POUT POUT MHz, IDset MHz, IDset Test Conditions VGSS VDSS IDSS MHz, IDset MHz, IDset Min. Typ. 12.4 32.4 14.7 34.7 Max. Unit
TMF8901B
Typical Characteristics unless otherwise specified)
Output Power, Power Gain, Drain Efficiency Input Power
Iidle
Iidle POUT
Output Power, POUT (dBm) Power Gain, (dB)
Output Power, POUT (dBm) Power Gain, (dB)
Drain Efficiency,
POUT
Input Power, (dBm)
Input Power, (dBm)
Output Power Input Power
Iidle
Drain Current Input Power
1100 1000 Iidle
Output Power, POUT (dBm)
Drain Current, (mA)
Input Power, (dBm)
Input Power, (dBm)
Drain Efficiency,
TMF8901B
Power Gain, Drain Efficiency Drain Idle Current
Drain Efficiency,
Drain Idle Current, Iidle (mA)
Drain Idle Current, Iidle (mA)
Power Gain, Drain Efficiency Drain Voltage
Iidle
Power Gain, (dB)
Drain Voltage,
Drain Efficiency,
Drain Efficiency,
Power Gain, (dB)
Power Gain, (dB)
TMF8901B
Test Circuit Schematic Diagram
Port
R=6.8 kOhm
C=10 L=100 MLIN Subst="MSub1" =1.37 L=19 R=56
C=10
C=100
Port
Model=0.4x2.0x6T
C=2.2 Port P_IN
C=2.2 MLIN Subst="MSub1" =1.37 Port P_OUT C=18
EE_MOS1 TMF8901B
C=22
C=2.2
Test Board 0.8mm glass epoxy
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