Silicon Channel Power High Speed Power Switching REJ03G0580-0200
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RJK5003DPD
Silicon Channel Power High Speed Power Switching
REJ03G0580-0200 Rev.2.00 2006
VDSS RDS(on) (MAX.) Surface mount package (MP-3A)
Outline
RENESAS Package code: PRSS0004ZA-A (Package name MP-3A)
Gate Drain Source Drain
Applications
Lighting ballast, SMPS, etc.
Maximum Ratings
25°C)
Parameter Drain source voltage Gate source voltage Drain current Drain Peak current Avalanche current Channel dissipation Channel temperature Storage temperature Channel case thermal impedance Note: Symbol VDSS VGSS (pulse)Note1 Tstg ch-c Ratings 62.5 +150 Unit °C/W Channel case Conditions
Pulse width limited safe operating area.
Rev.2.00,
2006,
page
RJK5003DPD
Electrical Characteristics
(Tch 25°C)
Parameter Drain source breakdown voltage Zero gate voltage drain current Gate source leak current Gate source cutoff voltage Static drain source state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Note: Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Ciss Coss Crss td(on) td(off) Min. Typ. Max. ±0.1 Unit Test conditions VNote2 VGS= Note2
Rev.2.00,
2006,
page
RJK5003DPD
Performance Curves
Power Temperature Derating
Maximum Safe Operating Area
Channel Dissipation
Drain Current
Operation this area limited RDS(on) 25°C Single pulse
0.01
1000
Case Temperature (°C)
Drain Source Voltage
Typical Output Characteristics
25°C Pulse Test
Typical Output Characteristics
Drain Current
62.5
Drain Current
25°C Pulse Test
Drain Source Voltage
Drain Source Voltage
Drain Source Saturation Voltage Gate Source Voltage (Typical)
Drain Source Saturation Voltage VDS(on) Drain Source State Resistance RDS(on)
25°C Pulse Test
Static Drain Source State Resistance Drain Current (Typical)
25°C Pulse Test
10-1
Gate Source Voltage
Drain Current
Rev.2.00,
2006,
page
RJK5003DPD
Capacitance Drain Source Voltage (Typical)
Ciss
Transfer Characteristics (Typical)
25°C Pulse Test
Drain Current
Capacitance (pF)
Coss 25°C Crss
Gate Source Voltage
Drain Source Voltage Gate Source Voltage Gate Charge (Typical)
Switching Characteristics (Typical)
25°C Pulse Test
Gate Source Voltage
25°C
Switching Time (ns)
td(on)
td(off)
Drain Current Reverse Drain Current Source Drain Voltage Characteristics (Typical)
Pulse Test 25°C
Gate Charge (nC)
Drain Source Breakdown Voltage V(BR)DSS (t°C) Drain Source Breakdown Voltage V(BR)DSS (25°C)
Breakdown Voltage Channel Temperature (Typical)
Source Current
Source Drain Voltage
Channel Temperature (°C)
Rev.2.00,
2006,
page
RJK5003DPD
Static Drain Source State Resistance Channel Temperature (Typical)
Pulse Test
Drain Source State Resistance RDS(on) (25°C)
Drain Source State Resistance RDS(on) (t°C)
Gate Source Cutoff Voltage VGS(off)
Gate Source Cutoff Voltage Channel Temperature (Typical)
10-1
Channel Temperature (°C)
Channel Temperature (°C)
Transient Thermal Impedance th(ch-c) (°C/W)
Transient Thermal Impedance Pulse Width
0.05 0.02 0.01 Single pulse
10-1
10-4 5710-3 710-2 10-12 7100
Pulse Width
Switching Time Measurement Circuit
Switching Waveform
Monitor D.U.T.
Vout Monitor Vout
td(on)
td(off)
Rev.2.00,
2006,
page
RJK5003DPD
Package Dimensions
Package Name MP-3A JEITA Package Code SC-63 RENESAS Code PRSS0004ZA-A Previous Code MASS[Typ.] 0.32g
Unit:
10.4Max
1Max
2.5Min
0.76
0.76
Order Code
Lead form Surface-mounted type Standard packing Taping Quantity 3000 Standard order code Type name direction Standard order code example RJK5003DPD-00-J2
Note: case standard. addition, please confirm packing specification every product about contents packing.
Rev.2.00,
2006,
page
Sales Strategic Planning Div.
Keep safety first your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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