N-channel 0.047 TO-247 FDmeshII Power MOSFET (with fast diode) Ty

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N-channel 0.047 TO-247 FDmeshII Power MOSFET (with fast diode) Ty

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STW55NM60ND
N-channel 0.047 TO-247 FDmeshII Power MOSFET (with fast diode)
Type STW55NM60ND
VDSS
RDS(on)
0.060
worldwide best RDS(on) amongst fast recovery diode devices TO-247 100% avalanche tested input capacitance gate charge gate input resistance High dv/dt avalanche capabilities
TO-247
Application
Switching applications
Figure
Internal schematic diagram
Description
FDmeshII series belongs second generation MDmeshtechnology. This revolutionary Power MOSFET associates vertical structure company's strip layout associates advantages reduced onresistance fast switching with intrinsic fastrecovery body diode.It therefore strongly recommended bridge topologies, particular phase-shift converters.
Table
Device summary
Marking 55NM60ND Package TO-247 Packaging Tube
Order codes STW55NM60ND
November 2007
www.st.com
This preliminary information product development undergoing evaluation. Details subject change without notice.
Electrical ratings
STW55NM60ND
Electrical ratings
Table
Symbol
Absolute maximum ratings
Parameter Drain-source voltage (VGS Gate- source voltage Drain current (continuous) Drain current (continuous) Drain current (pulsed) Total dissipation Derating factor Value Unit W/°C V/ns
PTOT dv/dt(2) Tstg
Peak diode recovery voltage slope Storage temperature Max. operating junction temperature
Pulse width limited safe operating area di/dt A/µs, V(BR)DSS
Table
Symbol
Thermal data
Parameter Value 0.36 Unit °C/W °C/W
Rthj-case Thermal resistance junction-case Rthj-amb Thermal resistance junction-ambient Maximum lead temperature soldering purpose
Table
Symbol
Avalanche characteristics
Parameter Avalanche current, repetitive notrepetitive (pulse width limited max) Single pulse avalanche energy (starting IAS, value Unit
STW55NM60ND
Electrical characteristics
Electrical characteristics
(TCASE=25°C unless otherwise specified) Table
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS Gate-body leakage current (VDS Gate threshold voltage Static drain-source resistance Test conditions rating rating @125 VGS, 25.5 0.047 Min. 0.060 Typ. Max. Unit
Table
Symbol Ciss Coss Crss Coss eq.(2) td(on) td(off)
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Gate input resistance Test conditions 25.5 MHz, Min. Typ. 5800 Max. Unit
25.5 (see Figure (see Figure (see Figure Gate Bias Test signal level Open drain
Pulsed: pulse duration=300µs, duty cycle 1.5% Coss defined constant equivalent capacitance giving same charging time Coss when increases from VDSS
Electrical characteristics
STW55NM60ND
Table
Symbol ISDM IRRM IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current di/dt A/µs (see Figure A,VDD di/dt A/µs, (see Figure Test conditions Min. Typ. Max. Unit
Pulse width limited safe operating area Pulsed: Pulse duration duty cycle 1.5%.
STW55NM60ND
Test circuit
Figure
Test circuit
Switching times test circuit resistive load Figure Gate charge test circuit
Figure
Test circuit inductive load Figure switching diode recovery times
Unclamped Inductive load test circuit
Figure
Unclamped inductive waveform
Figure
Switching time waveform
Package mechanical data
STW55NM60ND
Package mechanical data
order meet environmental requirements, offers these devices ECOPACK® packages. These packages have Lead-free second level interconnect. category second level interconnect marked package inner label, compliance with JEDEC Standard JESD97. maximum ratings related soldering conditions also marked inner label. ECOPACK trademark. ECOPACK specifications available www.st.com.
STW55NM60ND
Package mechanical data
TO-247 MECHANICAL DATA
MIN. 4.85 2.20 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620
DIM.
Revision history
STW55NM60ND
Revision history
Table
Date 16-Nov-2007
Document revision history
Revision First release. Changes
STW55NM60ND
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N-channel 0.047 TO-247 FDmeshII Power MOSFET (with fast diode) Ty

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