W005M(G) W10M(G) VOLTAGE RANGE: 1000 CURRENT: SILICON BRIDGE
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W005M(G) W10M(G)
VOLTAGE RANGE: 1000 CURRENT:
SILICON BRIDGE RECTIFIERS
Rating 1000V Surge overload rating Amperes peak
.150(3.8) .130(3.3) .305(7.75) .265(6.73) .220(6.73) .180(4.6) .360(9.1) .340(8.6) .395(10.0) .355(9.0) .340(8.6) .300(7.6) RB15
Ideal printed circuit board Reliable cost construction utilizing molded plastic technique results inexpensive product Mounting Position:
1.27(32.3) 1.20(30.5)
Glass passivated chip junctions
POS. LEAD .032(.81) .028(.71) .220 .180 .220 .180 (5.6) (4.6) (5.6) (4.6)
inch(mm)
MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS
Ratings ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive inductive load. capacitive load,derate 20%.
W005M W01M W02M W04M W06M W08M W10M UNITS
Maximum recurrent peak reverse voltage Maximum voltage Maximum blocking voltage Maximum average forw Output current
VRRM VRMS IF(AV)
1000 1000
Peak forw surge current 8.3ms single half-sine-w superimposed rated load Maximum instantaneous forw voltage Maximum reverse current rated blocking voltage @TA=25 =100
IFSM
50.0
TSTG
10.0
Operating junction temperature range Storage temperature range
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Document Number 0287014
RATINGS CHARACTERISTIC CURVES
FIG.1 DERATING CUTPUT RECTIFIED CURRENT BRIDGE OUTPUT FULL WAVE RECTIFIED CURRENT AVERAGE AMPERES PEAK FORWARD SURGE CURRENT, AMPERES
W005M(G) W10M(G)
FIG.2 MAXIMUM FORWARD SURGE CURRENT
8.3ms Single Half Sine Wave =125
TJ=25
AMBIENT TEMPERATURE,
NUMBER CYCLES 60HZ
FIG.3 TYPICAL FORWARD CHARACTERISTIC
FIG.4 TYPICAL REVERSE CHARACTERISTIC
INSTANTANEOUS FORWARD CURRENT, AMPERES
INSTANTANEOUS REVERSE CURRENT, MICRO AMPERES
TYPICAL DISTRIBUTION
TJ=25
TJ=25
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
PERCENT RATED PEAK REVERSE VOLTAGE
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Document Number 0287014
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