Avalanche Energy Specified Fast Switching Simple Drive Requirements
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BLV8N60
Avalanche Energy Specified Fast Switching Simple Drive Requirements
BVDSS RDS(ON)
600V 7.5A
Description
This advanced high voltage MOSFET produced using Belling's proprietary DMOS technology. Designed high efficiency switch mode power supply.
Absolute Maximum Ratings TC=25oC unless otherwise noted
Symbol TSDG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current TC=100 Drain Current (pulsed) Power Dissipation Linear Derating Factor Single Pulsed Avalanche Energy (Note Avalanche Current Repetitive Avalanche Energy (Note (Note (Note Value 1.18 14.7 +150 +150 Units
Operating Junction Temperature Range Storage Temperature Range
Thermal Characteristics
Symbol Parameter Thermal Resistance, Junction case Thermal Resistance, Junction Ambient Max. Max. Value 0.85 62.5 Units
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BLV8N60
Electrical Characteristics TC=25C unless otherwise noted
Symbol BVDSS BVDSS RDS(ON) VGS(th) IDSS Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Gate Threshold Voltage Drain-Source Leakage Current Drain-Source Leakage Current Tc=125 Gate-Source Leakage Current Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS=0V, ID=250uA Reference ID=1mA VDS=VGS, ID=250uA VDS=600V, VGS=0V VDS=480V, VGS=0V VGS= ±20V VDD=480V ID=7.5A VGS=10V (note3) VDD=300V ID=7.5A RG=25 note3 (note3) VDS=25V VGS=0V 1MHz Min. Typ. 35.5 14.1 1074 Max. ±100 Units
Static Drain-Source On-Resistance VGS=10V, ID=3.75A Forward Transconductance (note3) VDS=15V, ID=3.75A
IGSS (on) (off) Ciss Coss Crss
Source-Drain Diode Characteristics
Symbol Note
Repetitive Rating: Pulse width limited maximum junction temperature
Parameter
Test Conditions
Min.
Typ. 1020
Max.
Units
Continuous Source Diode Forward Current Pulsed Source Diode Forward Current (note1) Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS=0V, IS=7.5A
VGS=0V, IS=7.5A(note3)
dIF/dt =100A/us
L=7.3mH, Ias=7.5AVdd=50VRg=25staring Tj=25C
Pulse width duty cycle
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BLV8N60
Typical Characteristics
Typical Output Characteristics
Typical Output Characteristics
Normalized BVdss Junction Temperature
Normalized On-Resistance Junction Temperature
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BLV8N60
Typical Characteristics continued
On-Resistance Variation Drain Current Gate Voltage
Body Diode Forward Voltage Variation Source Current Temperature
Gate Charge Characteristics
Capacitance Characteristics
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BLV8N60
Typical Characteristics continued
Maximum Safe Operating Area
Transient Thermal Response Curve
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E8N60
Test Circuit Waveform
Gate Charge Circuit
Gate Charge Waveform
Switching Time Circuit
Switching Time Waveform
Unclamped Inductive Switching Test Circuit
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Unclamped Inductive Switching Waveforms
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