SILICON BRIDGE RECTIFIERS REVERSE VOLTAGE FORWARD CURRENT .134(3.

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SILICON BRIDGE RECTIFIERS REVERSE VOLTAGE FORWARD CURRENT .134(3.

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KBJ25005 thru KBJ2510
SILICON BRIDGE RECTIFIERS REVERSE VOLTAGE FORWARD CURRENT
.134(3.4) .122(3.1) 1.193(30.3) 1.169(29.7) .213(5.4) .197(5.0) .173(4.4) .157(4.0)
.134(3.4) .122(3.1)
1000Volts Amperes
FEATURES
Rating 1000V Ideal printed circuit board forward voltage drop,high current capability Reliable cost construction utilizing molded plastic
technique results inexpensive product
plastic material flammability
.198 (5.1) .800(20.3) .776(19.7) .165(4.2) .142(3.6) .708(18.0) .669(17.0)
classification 94V-0
.106(2.7) .096(2.3) .094(2.4) .075(1.9) .043(1.1) .035(0.9)
.441(11.2) .425(10.8)
.114(2.9) .098(2.5)
.402(10.2) .303(7.7).303(7.7) SPACING .386(9.8) .287(7.3).287(7.3)
.031(0.8) .023(0.6)
Dimensions inches (milimeters)
MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS
Rating ambient temperature unless otherwise specified. Single phase, half wave ,60Hz, resistive inductive load. capacitive load, derate current
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage Maximum Voltage Maximum Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surage Current 8.3ms Single Half Sine-Wave Super Imposed Rated Load (JEDEC Method) Maximum Forward Voltage 12.5A Maximum Reverse Current Rated Blocking Voltage Rating Fusing (t<8.3ms) Typical Junction Capacitance Element (Note1) Typical Thermal Resistance (Note2) Operating Temperature Range Storage Temperature Range TJ=25 TJ=125 (with heatsink Note TC=100 (without heatsink)
SYMBOL VRRM VRMS I(AV)
25005
2501
2502
2504 25.0 +125 +150
2506
2508
2510 1000 1000
UNIT
IFSM TSTG
NOTES: 1.Measured 1.0MHz applied reverse voltage 4.0V 2.Device mounted 300mm*300mm*1.6mm plate heatsink.
RATING CHARACTERTIC CURVES KBJ25005 thru KBJ2510
FIG.2-MAXMUN NON-REPETITIVE SURGE CURRENT FIG.1-FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT AMPERES
WITH HEATSINK
PEAK FORWARD SURGE CURRENT AMPERES
SINGLE HALF-SINE-WAVE (JEDEC METHOD) TJ=150 SINGLE -SINE- WAVE (JEDEC METHOD)
WITHOUT HEATSINK SINGLE PHASE HALF WAVE 60Hz RESISTIVE INDUCTIVE LOAD
CASE TEMPERATURE,
NUMBER CYCLES 60Hz
FIG.3-TYPICAL JUNCTION CAPACITANCE 1000 INSTANTANEOUS FORWARD CURRENT,
FIG.4-TYPICAL FORWARD CHARACTERISTICS
CAPACITANCE,(pF)
PULSE WIDTH 300us
J=25,f=1MHZ
10.0 REVERSE VOLTAGE,(VOLTS) 0.01 INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG.5-TYPICAL REVERSE CHARACTERISTICS 1000 INSTANTANEOUS REVERSE CURRENT ,(uA)
J=125
J=100
J=50
J=25
PERCENT RATED PEAK REVERSE VOLTAGE,(%)

SILICON BRIDGE RECTIFIERS REVERSE VOLTAGE FORWARD CURRENT .134(3.

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