SILICON BRIDGE RECTIFIERS REVERSE VOLTAGE FORWARD CURRENT .134(3.

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SILICON BRIDGE RECTIFIERS REVERSE VOLTAGE FORWARD CURRENT .134(3.

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KBJ10005 thru KBJ1010
SILICON BRIDGE RECTIFIERS REVERSE VOLTAGE FORWARD CURRENT
.134(3.4) .122(3.1) 1.193(30.3) 1.169(29.7) .213(5.4) .197(5.0) .173(4.4) .157(4.0)
.134(3.4) .122(3.1)
1000Volts Amperes
FEATURES
Rating 1000V Ideal printed circuit board forward voltage drop,high current capability Reliable cost construction utilizing molded plastic
plastic material flammability
.198 (5.1) .800(20.3) .776(19.7) .165(4.2) .142(3.6) .708(18.0) .669(17.0)
technique results inexpensive product
classification 94V-0
.106(2.7) .096(2.3) .094(2.4) .075(1.9) .043(1.1) .035(0.9)
.441(11.2) .425(10.8)
.114(2.9) .098(2.5)
.402(10.2) .303(7.7).303(7.7) SPACING .386(9.8) .287(7.3).287(7.3)
.031(0.8) .023(0.6)
Dimensions inches (milimeters)
MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS
Rating ambient temperature unless otherwise specified. Single phase, half wave ,60Hz, resistive inductive load. capacitive load, derate current
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage Maximum Voltage Maximum Blocking Voltage Maximum Average Forward (with heatsink Note Rectified Current TC=110 (without heatsink) Peak Forward Surage Current 8.3ms Single Half Sine-Wave Super Imposed Rated Load (JEDEC Method) Maximum Forward Voltage 5.0A Maximum Reverse Current Rated Blocking Voltage Rating Fusing (t<8.3ms) Typical Junction Capacitance Element (Note1) Typical Thermal Resistance (Note2) Operating Temperature Range Storage Temperature Range TJ=25 TJ=125
SYMBOL VRRM VRMS I(AV)
10005
1001
1002
1004 10.0 +125 +150
1006
1008
1010 1000 1000
UNIT
IFSM TSTG
NOTES: 1.Measured 1.0MHz applied reverse voltage 4.0V 2.Device mounted 150mm*150mm*1.6mm plate heatsink.
RATING CHARACTERTIC CURVES KBJ10005 thru KBJ1010
FIG.1-FORWARD CURRENT DERATING CURVE 10.0 AVERAGE FORWARD OUTPUT CURRENT AMPERES
WITH HEATSINK
FIG.2-MAXMUN NON-REPETITIVE SURGE CURRENT PEAK FORWARD SURGE CURRENT AMPERES
J=150 SINGLE -SINE- WAVE
SINGLE PHASE HALF WAVE 60Hz
(JEDEC METHOD)
RESISTIVE INDUCTIVE LOAD
Single Half-Sine- Wave (JEDEC METHOD)
WITHOUT HEATSINK
CASE TEMPERATURE,
NUMBER CYCLES 60Hz
FIG.3-TYPICAL JUNCTION CAPACITANCE INSTANTANEOUS FORWARD CURRENT,
FIG.4-TYPICAL FORWARD CHARACTERISTICS
CAPACITANCE,(pF)
25°C PULSE WIDTH 300us
J=25,f=1MHZ
10.0 REVERSE VOLTAGE,(VOLTS) 0.01 INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG.5-TYPICAL REVERSE CHARACTERISTICS 1000 INSTANTANEOUS REVERSE CURRENT ,(uA)
J=125
J=100
J=50
J=25
PERCENT RATED PEAK REVERSE VOLTAGE,(%)

SILICON BRIDGE RECTIFIERS REVERSE VOLTAGE FORWARD CURRENT .134(3.

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