FTD2017R FTD2017R Features N-Channel Silicon MOSFET

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FTD2017R FTD2017R Features N-Channel Silicon MOSFET

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Ordering number ENA0472
FTD2017R
FTD2017R
Features
N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
ON-resistance. 2.5V drive. Mount height 1.1mm. Composite type, facilitating high-density mounting. Drain common specifications.
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS Tstg PW10µs, duty cycle1% Mounted ceramic board (1000mm20.8mm)1unit Mounted ceramic board (1000mm20.8mm) Conditions Ratings 1.25 +150 Unit
Electrical Characteristics Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on)1 RDS(on)2 RDS(on)3 RDS(on)4 Conditions ID=1mA, VGS=0V VDS=20V, VGS=0V VGS= ±8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=6A ID=6A, VGS=4.5V ID=6A, VGS=4V ID=3A, VGS=3.1V ID=3A, VGS=2.5V Ratings 14.4 11.5 Unit
Static Drain-to-Source On-State Resistance
Marking D2017R
Continued next page.
SANYO Semiconductor products described contained herein have specifications that handle applications that require extremely high levels reliability, such life-support systems, aircraft's control systems, other applications whose failure reasonably expected result serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest before usingany SANYO Semiconductor products described contained herein such applications. SANYO Semiconductor assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor products described contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1506PA TC-00000296 A0472-1/4
FTD2017R
Continued from preceding page.
Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol td(on) td(off) Conditions specified Test Circuit. specified Test Circuit. specified Test Circuit. specified Test Circuit. VDS=10V, VGS=4.5V, ID=6A VDS=10V, VGS=4.5V, ID=6A VDS=10V, VGS=4.5V, ID=6A IS=6A, VGS=0V Ratings 2700 5500 5400 0.83 Unit
Package Dimensions
unit (typ) 7006A-005
0.95
Electrical Connection
0.125
0.95
0.25 0.65
0.05
Drain Source1 Source1 Gate1 Gate2 Source2 Source2 Drain SANYO TSSOP8
Drain Source1 Source1 Gate1 Gate2 Source2 Source2 Drain
view
Switching Time Test Circuit
4.5V ID=5A RL=2 VDD=10V
0.425
PW=10µs D.C.1%
VOUT
FTD2017R
Rg=2.4k
A0472-2/4
FTD2017R
2.5V
VDS=6V
Drain Current,
Drain Current,
0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40
IT11786
Drain-to-Source Voltage,
IT11785
RDS(on)
Gate-to-Source Voltage,
RDS(on)
Ta=25°C
Static Drain-to-Source On-State Resistance, RDS(on)
Static Drain-to-Source On-State Resistance, RDS(on)
-100
-25°C
25°C
Ta=75
ID=6A
IT11787
IT11788
Gate-to-Source Voltage,
Case Temperature,
VGS=0V
Forward Transfer Admittance,
VDS=10V
Source Current,
0.01
Drain Current,
IT11789
Tc=75 25°C -25°C
IT11790
Diode Forward Voltage,
Time
VDS=10V ID=6A
Switching Time, Time
10000
td(off)
Gate-to-Source Voltage,
1000
td(on)
Drain Current,
IT11323
Total Gate Charge,
IT11791
A0472-3/4
FTD2017R
Allowable Power Dissipation,
IDP=40A
Mounted ceramic board (1000mm20.8mm)
10µs
1.25
Drain Current,
ID=6A
Operation this area limited RDS(on).
0.01 0.01
Ta=25°C Single pulse Mounted ceramic board (1000mm20.8mm) 1unit
IT11852
Drain-to-Source Voltage,
Ambient Temperature,
IT11853
Allowable Power Dissipation(FET1),
PD(FET1) PD(FET2)
IT11854
Allowable Power Dissipation(FET2),
Note usage Since FTD2017R MOSFET product, please avoid using this device vicinity highly charged objects.
Specifications SANYO Semiconductor products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer's products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer's products equipment. SANYO Semiconductor Co., Ltd. strives supply high-quality high-reliability products. However, semiconductor products fail with some probability. possible that these probabilistic failures could give rise accidents events that could endanger human lives, that could give rise smoke fire, that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor products (including technical data,services) described contained herein controlled under applicable local export control laws regulations, such products must exported without obtaining export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written permission SANYO Semiconductor Co., Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. SANYO Semiconductor believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties.
This catalog provides information November, 2006. Specifications information herein subject change without notice.
A0472-4/4

FTD2017R FTD2017R Features N-Channel Silicon MOSFET

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