AO4404B uses advanced trench technology provide excellent RDS(ON), gat

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AO4404B uses advanced trench technology provide excellent RDS(ON), gat

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AO4404B N-Channel Enhancement Mode Field Effect Transistor
AO4404B uses advanced trench technology provide excellent RDS(ON), gate charge operation with gate voltages 2.5V. This device suitable load switch applications. source leads separated allow Kelvin connection source, which used bypass source inductance. Standard Product AO4404B Pb-free (meets ROHS Sony specifications).
8.5A (VGS 10V) RDS(ON) (VGS 10V) RDS(ON) (VGS 4.5V) RDS(ON) (VGS 2.5V) TESTED! Rg,Ciss,Coss,Crss Tested
SOIC-8
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Avalanche Current
Maximum
Units
TA=25°C TA=70°C TA=25°C TA=70°C
TSTG
Repetitive avalanche energy 0.3mH
Junction Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead
Symbol Steady-State Steady-State
Units °C/W °C/W °C/W
Alpha Omega Semiconductor, Ltd.
AO4404B
Electrical Characteristics J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS= ±12V VDS=VGS ID=250µA VGS=4.5V, DS=5V VGS=10V, D=8.5A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, D=8.5A VGS=2.5V, D=5A Forward Transconductance VDS=5V, ID=5A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current 0.71 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 0.95 VGS=4.5V, DS=15V, D=8.5A 3.75 VGS=10V, VDS=15V, RL=1.8, RGEN=6 IF=5A, dI/dt=100A/µs IF=5A, dI/dt=100A/µs 21.5 16.8 1100 0.002 Units
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Total Gate Charge Gate Source Charge tD(on) tD(off) Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
value measured with device mounted FR-4 board with 2oz. Copper, still environment with A=25°C. value given application depends user's specific board design. Repetitive rating, pulse width limited junction temperature. thermal impedence from junction lead lead ambient. static characteristics Figures obtained using <300µs pulses, duty cycle 0.5% max. These tests performed with device mounted FR-4 board with 2oz. Copper, still environment with T=25°C. curve provides single pulse rating. current rating based junction ambient thermal resistance rating. Rev0: 2007
THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AO4404B
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
2.5V (Volts) On-Region Characteristics RDS(ON) VGS=10V Figure On-Resistance Drain Current Gate Voltage Normalized On-Resistance VGS=2.5V Temperature (°C) Figure On-Resistance Junction Temperature VGS=4.5 VGS=10V VGS=2.5V VGS=2.5V VGS=10V VGS=4.5V VGS=2V 4.5V ID(A) 125°C 25°C VGS(Volts) Figure Transfer Characteristics VDS=5V
VGS=4.5V
RDS(ON) 125°C ID=8.5A
1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 125°C
THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL 25°C 1.0E-04 COMPONENTS IN25°C SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING LIFE 1.0E-05 SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE. 1.0E-06 (Volts) Figure On-Resistance Gate-Source Voltage (Volts) Figure Body-Diode Characteristics
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AO4404B
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
(Volts) (nC) Figure Gate-Charge Characteristics (Volts) Figure Capacitance Characteristics 1400 VDS=15V ID=8.5A Capacitance (pF) 1200 1000 Crss Coss Ciss
100.0 RDS(ON) limited (Amps) 10.0 100µs Power 10ms 0.1s (Volts) Figure Maximum Forward Biased Safe Operating Area (Note TJ(Max)=150°C TA=25°C
0.0001 0.001 0.01 1000
TJ(Max)=150°C TA=25°C
Pulse Width Figure Single Pulse Power Rating Junction-toAmbient (Note
Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=45°C/W
descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, Single Pulse FUNCTIONS RELIABILITY WITHOUT NOTICE. 0.01 0.00001 0.0001 0.001 0.01 1000 Pulse Width Figure Normalized Maximum Transient Thermal Impedance
Alpha Omega Semiconductor, Ltd.
www.aosmd.com

AO4404B uses advanced trench technology provide excellent RDS(ON), gat

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