IRLR/U3103PbF Logic-Level Gate Drive Ultra On-Resistance Surface

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IRLR/U3103PbF Logic-Level Gate Drive Ultra On-Resistance Surface

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95085A
IRLR/U3103PbF
Logic-Level Gate Drive Ultra On-Resistance Surface Mount (IRLR3103) Straight Lead (IRLU3103) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free Description
HEXFET® Power MOSFET
VDSS RDS(on) 0.019
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques achieve lowest possible on-resistance silicon area. This benefit, combined with fast switching speed ruggedized device design that HEXFET Power MOSFETs well known for, provides designer with extremely efficient device wide variety applications. D-PAK designed surface mounting using vapor phase, infrared, wave soldering techniques. straight lead version (IRFU series) throughhole mounting applications. Power dissipation levels watts possible typical surface mount applications.
D-PAK TO-252AA I-PAK TO-251AA
Absolute Maximum Ratings
Parameter
25°C 100°C 25°C dv/dt TSTG Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Soldering Temperature, seconds
Max.
0.71 (1.6mm from case
Units
W/°C V/ns
Thermal Resistance
Parameter
Junction-to-Case Junction-to-Ambient (PCB mount) Junction-to-Ambient
Typ.
Max.
Units
°C/W
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12/7/04
IRLR/U3103PbF
Electrical Characteristics 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss
Min. Typ. Max. Units Conditions 250µA 0.037 V/°C Reference 25°C, 0.019 10V, 0.024 4.5V, VGS, 250µA 25V, 30V, 18V, 150°C -100 -16V 4.5V, Fig. 3.4, 4.5V 0.43, Fig. Between lead, (0.25in.) from package center contact 1600 1.0MHz, Fig.
Source-Drain Ratings Characteristics
Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions MOSFET symbol showing integral reverse junction diode. 25°C, 28A, 25°C, di/dt 100A/µs Intrinsic turn-on time negligible (turn-on dominated LS+LD)
max. junction temperature. fig. 15V, starting 25°C, 300µH 34A. (See Figure
Repetitive rating; pulse width limited
Pulse width 300µs; duty cycle Calculated continuous current based maximum allowable junction This applied I-PAK, D-PAK measured between lead
center contact temperature; Package limitation current
34A, di/dt 140A/µs, V(BR)DSS,
175°C
Uses IRL3103 data test conditions
When mounted square (FR-4 G-10 Material recommended footprint soldering techniques refer application note #AN-994
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IRLR/U3103PbF
1000
8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V
1000
Drain-to-Source Current
Drain-to-Source Current
8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V
2.5V
2.5V
20µs PULSE WIDTH 25°C
20µs PULSE WIDTH 175°C
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
DS(on) Drain-to-Source Resistance (Normalized)
1000
Drain-to-Source Current
25°C
175°C
20µs PULSE WIDTH
Gate-to-Source Voltage
Junction Temperature (°C)
Typical Transfer Characteristics
Normalized On-Resistance Temperature
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IRLR/U3103PbF
3200 2800 2400 2000 1600 1200
Ciss
Gate-to-Source Voltage
1MHz SHORTED
Capacitance (pF)
Coss
Crss
TEST CIRCUIT FIGURE
Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
1000
1000
Reverse Drain Current
OPERATION THIS AREA LIMITED DS(on)
10µs 100µs
175°C 25°C
Drain Current
10ms
25°C 175°C Single Pulse
Source-to-Drain Voltage
Drain-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
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IRLR/U3103PbF
LIMITED PACKAGE
D.U.T.
Drain Current
-VDD
5.0V
Pulse Width Duty Factor
10a. Switching Time Test Circuit
Case Temperature
Maximum Drain Current Case Temperature
td(on) d(off)
10b. Switching Time Waveforms
Thermal Response thJC
0.50 0.20 0.10 SINGLE PULSE (THERMAL RESPONSE) Notes: Duty factor Peak thJC 0.0001 0.001 0.01
0.05 0.02 0.01
0.01 0.00001
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRLR/U3103PbF
Single Pulse Avalanche Energy (mJ)
BOTTOM
DRIVER
D.U.T
0.01
12a. Unclamped Inductive Test Circuit
V(BR)DSS
Starting Junction Temperature (°C)
12c. Maximum Avalanche Energy Drain Current
12b. Unclamped Inductive Waveforms
Current Regulator Same Type D.U.T.
.2µF .3µF
D.U.T.
Charge
Current Sampling Resistors
13a. Basic Gate Charge Waveform
13b. Gate Charge Test Circuit
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IRLR/U3103PbF
Peak Diode Recovery dv/dt Test Circuit
D.U.T
Circuit Layout Considerations Stray Inductance Ground Plane Leakage Inductance Current Transformer
dv/dt controlled Driver same type D.U.T. controlled Duty Factor D.U.T. Device Under Test
Driver Gate Drive P.W. Period
P.W. Period VGS=10V
D.U.T. Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. Waveform Diode Recovery dv/dt
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple
Logic Level Devices N-Channel HEXFETS
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IRLR/U3103PbF
D-Pak (TO-252AA) Package Outline
Dimensions shown millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: IRFR120 EMBLY CODE 1234 EMBLED 1999 EMBLY LINE Note: sembly line ition indicates "Lead-Free" ERNAT IONAL RECT IFIER LOGO EMBLY CODE PART NUMBER
IRFU120 916A
CODE YEAR 1999 WEEK LINE
ERNAT IONAL RECT IFIER LOGO EMBLY CODE PART NUMBER
IRFU120
CODE IGNATES LEAD-FREE PRODUCT (OPT IONAL) YEAR 1999 WEEK EMBLY CODE
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IRLR/U3103PbF
I-Pak (TO-251AA) Package Outline
Dimensions shown millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
EXAMPLE: IRFU120 EMBLY CODE 5678 EMBLED 1999 EMBLY LINE Note: assembly line position indicates "Lead-Free" ERNAT IONAL RECT IFIER LOGO EMBLY CODE PART NUMBER
U120 919A
CODE YEAR 1999 WEEK LINE
ERNAT IONAL RECT IFIER LOGO EMBLY CODE PART NUMBER
IRFU120
CODE IGNAT LEAD-FREE PRODUCT (OPTIONAL) YEAR 1999 WEEK EMBLY CODE
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IRLR/U3103PbF
D-Pak (TO-252AA) Tape Reel Information
Dimensions shown millimeters (inches)
16.3 .641 15.7 .619
16.3 .641 15.7 .619
12.1 .476 11.9 .469
FEED DIRECTION
.318 .312
FEED DIRECTION
NOTES CONTROLLING DIMENSION MILLIMETER. DIMENSIONS SHOWN MILLIMETERS INCHES OUTLINE CONFORMS EIA-481 EIA-541.
INCH
NOTES OUTLINE CONFORMS EIA-481.
Data specifications subject change without notice.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information.12/04
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Note: most current drawings please refer website http://www.irf.com/package/

IRLR/U3103PbF Logic-Level Gate Drive Ultra On-Resistance Surface

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