Features Emitting area power requirement. Excellent characters ap
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BA-2E2UW
Features
Emitting area power requirement. Excellent characters appearance. Solid state reliability. Categorized luminous intensity.
Package Dimensions
6.30(.248) 7.50(.295) 12.80(.504) 13.90(.547)
5.08(.200)
7.80(.307)
Description
BA-2E2UW have uniform emitting light. This product hi-eff chips, which
0.50(.020)
3.00(.118) MIN.
2.54x2=5.08(.200) NOM.
Notes: made from GaAsP substrate. dimensions millimeters(inches). Tolerance ±0.25mm(.01")unless otherwise This product have white face specified. Specifications subject change without white segments. notice.
Internal Circuit Diagram
Ver.2.0 Page
BA-2E2UW
Absolute Maximum Ratings(Ta=25) Parameter
Power Dissipation Segment Forward Current Segment Peak Forward Current Segment Reverse Voltage Segment Operating Temperature Storage Temperature Soldering Temperature (1/16" From Body)
Symbol
(Duty 1/10, 1KHZ) Topr Tstg Tsol
Rating
-40~80 -40~85 Seconds
Unit
Electrical Optical Characteristics(Ta=25) Parameter
Forward Voltage Segment Luminous Intensity Segment Reverse Current Segment Peak Wave Length Dominant Wave Length Spectral Line Half-width
Symbol Condition
IF=10mA IF=10mA VR=5V IF=10mA IF=10mA IF=10mA
Min.
Typ.
Max.
Unit
Ver.2.0 Page
BA-2E2UW
Typical Electro-Optical Characteristics Curves
Ambient Temperature Unless Otherwise Noted)
Fig.1 Relative Radiant Intensity Wavelength
Relative Radiant Intensity
Wavelength(nm)
Relative Luminous Intensity (@20mA)
Fig.2 Forward Current Forward Voltage
Fig.3 Relative Luminous Intensity Ambient Temperature
Forward Current (mA)
Forward Voltage Fig.4 Relative Luminous Intensity Forward Current
Ambient Temperature Fig.5 Forward Current Derating Curve Ambient Temperature
Relative Luminous Intensity (@20mA)
Forward Current(mA)
Forward Current(mA)
Ambient Temperature
Ver.2.0 Page
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