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FDC637BNZ N-Channel 2.5V Specified PowerTrench® MOSFET

FDC637BNZ

FDC637BNZ N-Channel 2.5V Specified PowerTrench® MOSFET
September 2007
FDC637BNZ
20V, 6.2A, 24m Features
N-Channel 2.5V Specified PowerTrench MOSFET
General Description
Applications
DC - DC Conversion Load switch Battery Protection
SuperSOT -6
Operating and Storage Junction Temperature Range
Thermal Characteristics
RJA RJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) 78 156 °C / W
Package Marking and Ordering Information
Device Marking .637Z Device FDC637BNZ Package SSOT6
Tape Width 8mm
Quantity 3000 units
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FDC637BNZ N-Channel 2.5V Specified PowerTrench® MOSFET
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
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FDC637BNZ N-Channel 2.5V Specified PowerTrench® MOSFET
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT(A)
Figure 1. On-Region Characteristics
Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage
SOURCE ON-RESISTANCE (m)
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
rDS(on), DRAIN TO
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On- Resistance vs Junction Temperature
ID, DRAIN CURRENT (A)
IS, REVERSE DRAIN CURRENT (A)
Figure 4. On-Resistance vs Gate to Source Voltage
150oC
1E-3 0.0
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage vs Source Current
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FDC637BNZ N-Channel 2.5V Specified PowerTrench® MOSFET
VGS, GATE TO SOURCE VOLTAGE(V)
CAPACITANCE (pF)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain to Source Voltage
Ig, GATE LEAKAGE CURRENT(uA)
ID, DRAIN CURRENT (A)
100us
THIS AREA IS LIMITED BY rDS(on)
1ms 10ms 100ms 1s 10s DC
VGS, GATE TO SOURCE VOLTAGE (V)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 9. Gate Leakage Current vs Gate to Source Voltage
P(PK), PEAK TRANSIENT POWER (W)
Figure 10. Forward Bias Safe Operating Area
t, PULSE WIDTH (s)
Figure 11. Single Pulse Maximum Power Dissipation
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FDC637BNZ N-Channel 2.5V Specified PowerTrench® MOSFET
NORMALIZED THERMAL IMPEDANCE, ZJA
DUTY CYCLE-DESCENDING ORDER
1E-3 -4 10
t, RECTANGULAR PULSE DURATION (s)
Figure 12. Transient Thermal Response Curve
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FDC637BNZ N-Channel 2.5V Specified PowerTrench® MOSFET
TRADEMARKS
The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx® Build it Now CorePLUS CROSSVOLT CTL Current Transfer Logic EcoSPARK®
Fairchild® Fairchild Semiconductor® FACT Quiet Series FACT® FAST® FastvCore FPS FRFET® Global Power ResourceSM
Green FPS Green FPS e-Series GTO i-Lo IntelliMAX ISOPLANAR MegaBuck MICROCOUPLER MicroFET MicroPak MillerDrive Motion-SPM OPTOLOGIC® OPTOPLANAR®
PDP-SPM Power220®
Power247® POWEREDGE® Power-SPM PowerTrench® Programmable Active Droop QFET® QS QT Optoelectronics Quiet Series RapidConfigure SMART START SPM® STEALTH SuperFET SuperSOTTM-3 SuperSOTTM-6
SuperSOTTM-8 SyncFET The Power Franchise®
TinyBoost TinyBuck TinyLogic® TINYOPTO TinyPower TinyPWM TinyWire µSerDes UHC® UniFET VCXTM
As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user.
A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition
Advance Information Preliminary No Identification Needed
Formative or In Design First Production Full Production
This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.
Rev. I31
This datasheet contains preliminary data supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only.
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Obsolete
Not In Production