FDC637BNZ 20V, 6.2A, Features rDS(on) 4.5V, 6.2A rDS(on) 2.5

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FDC637BNZ 20V, 6.2A, Features rDS(on) 4.5V, 6.2A rDS(on) 2.5

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FDC637BNZ N-Channel 2.5V Specified PowerTrench® MOSFET
FDC637BNZ
20V, 6.2A, Features
rDS(on) 4.5V, 6.2A rDS(on) 2.5V, 5.2A Fast switching speed gate charge (8nC typical) High performance trench technology extremely rDS(on) SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8; profile (1mm thick) protection level typical (Note Manufactured using green packaging material Halide-Free RoHS Compliant
N-Channel 2.5V Specified PowerTrench MOSFET
General Description
This N-Channel 2.5V specified MOSFET produced using Fairchild Semiconductor's advanced PowerTrench® process that been especially tailored minimize on-state resistance maintain gate charge superior switching performance. These devices have been designed offer exceptional power dissipation very small footprint compared with bigger SO-8 TSSOP-8 packages.
Applications
Conversion Load switch Battery Protection
SuperSOT-6
MOSFET Maximum Ratings 25°C unless otherwise noted
Symbol TSTG Parameter Drain Source Voltage Gate Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Power Dissipation 25°C 25°C (Note (Note 25°C (Note Ratings +150 Units
Operating Storage Junction Temperature Range
Thermal Characteristics
Thermal Resistance, Junction Ambient Thermal Resistance, Junction Ambient (Note (Note °C/W
Package Marking Ordering Information
Device Marking .637Z Device FDC637BNZ Package SSOT6
Reel Size
Tape Width
Quantity 3000 units
www.fairchildsemi.com
©2007 Fairchild Semiconductor Corporation FDC637BNZ Rev.C
FDC637BNZ N-Channel 2.5V Specified PowerTrench® MOSFET
Electrical Characteristics 25°C unless otherwise noted
Symbol Parameter Test Conditions Units
Characteristics
BVDSS BVDSS IDSS IGSS Drain Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate Source Leakage Current 250µA, 250µA, referenced 25°C 16V, ±12V, mV/°C
Characteristics
VGS(th) VGS(th) rDS(on) Gate Source Threshold Voltage Gate Source Threshold Voltage Temperature Coefficient Static Drain Source Resistance Forward Transconductance VDS, 250µA 250µA, referenced 25°C 4.5V, 6.2A 2.5V, 5.2A 4.5V, 6.2A, 125°C 6.2A mV/°C
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 10V, 1MHz 1MHz
Switching Characteristics
td(on) td(off) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate Source Gate Charge Gate Drain "Miller" Charge 4.5V, 10V, 6.2A 10V, 6.2A 4.5V, RGEN
Drain-Source Diode Characteristics
Maximum Continuous Drain-Source Diode Forward Current Source Drain Diode Forward Voltage 1.3A Reverse Recovery Time Reverse Recovery Charge 6.2A, di/dt 100A/µs (Note
Notes: determined with device mounted 1in2 copper board FR-4 material. guaranteed design while determined user's board design. 78°C/W when mounted copper. 156°C/W when mounted minimum copper.
Pulse Test: Pulse Width 300µs, Duty cycle 2.0%. diode connected between gate source serves only protection against ESD. gate overvoltage rating implied.
©2007 Fairchild Semiconductor Corporation FDC637BNZ Rev.C
www.fairchildsemi.com
FDC637BNZ N-Channel 2.5V Specified PowerTrench® MOSFET
Typical Characteristics 25°C unless otherwise noted
NORMALIZED DRAIN SOURCE ON-RESISTANCE
4.5V 2.5V
DRAIN CURRENT
1.5V
PULSE DURATION 80µs DUTY CYCLE 0.5%MAX
PULSE DURATION 80µs DUTY CYCLE 0.5%MAX
1.8V 2.5V
1.8V
1.5V
4.5V
VDS, DRAIN SOURCE VOLTAGE
DRAIN CURRENT(A)
Figure On-Region Characteristics
Figure Normalized On-Resistance Drain Current Gate Voltage
6.2A
SOURCE ON-RESISTANCE
NORMALIZED DRAIN SOURCE ON-RESISTANCE
6.2A 4.5V
PULSE DURATION 80µs DUTY CYCLE 0.5%MAX
rDS(on), DRAIN
125oC
25oC
JUNCTION TEMPERATURE (oC)
VGS, GATE SOURCE VOLTAGE
Figure Normalized Resistance Junction Temperature
DRAIN CURRENT
REVERSE DRAIN CURRENT
PULSE DURATION 80µs DUTY CYCLE 0.5%MAX
Figure On-Resistance Gate Source Voltage
150oC 25oC
150oC
25oC
0.01
-55oC
-55oC
1E-3
VGS, GATE SOURCE VOLTAGE
VSD, BODY DIODE FORWARD VOLTAGE
Figure Transfer Characteristics
Figure Source Drain Diode Forward Voltage Source Current
©2007 Fairchild Semiconductor Corporation FDC637BNZ Rev.C
www.fairchildsemi.com
FDC637BNZ N-Channel 2.5V Specified PowerTrench® MOSFET
Typical Characteristics 25°C unless otherwise noted
VGS, GATE SOURCE VOLTAGE(V)
6.2A
CAPACITANCE (pF)
2000
1000
Ciss
Coss
Crss
1MHz
VDS, DRAIN SOURCE VOLTAGE
GATE CHARGE(nC)
Figure Gate Charge Characteristics
Figure Capacitance Drain Source Voltage
GATE LEAKAGE CURRENT(uA)
DRAIN CURRENT
100us
150oC
THIS AREA LIMITED rDS(on)
10ms 100ms
25oC
SINGLE PULSE RATED 156oC/W 25oC
0.01
VGS, GATE SOURCE VOLTAGE
VDS, DRAIN SOURCE VOLTAGE
Figure Gate Leakage Current Gate Source Voltage
1000
4.5V
P(PK), PEAK TRANSIENT POWER
Figure Forward Bias Safe Operating Area
SINGLE PULSE 156oC/W 25oC
PULSE WIDTH
Figure Single Pulse Maximum Power Dissipation
©2007 Fairchild Semiconductor Corporation FDC637BNZ Rev.C
www.fairchildsemi.com
FDC637BNZ N-Channel 2.5V Specified PowerTrench® MOSFET
Typical Characteristics 25°C unless otherwise noted
NORMALIZED THERMAL IMPEDANCE,
DUTY CYCLE-DESCENDING ORDER
0.05 0.02 0.01
0.01
SINGLE PULSE
NOTES: DUTY FACTOR: t1/t2 PEAK
1E-3
RECTANGULAR PULSE DURATION
Figure Transient Thermal Response Curve
©2007 Fairchild Semiconductor Corporation FDC637BNZ Rev.C
www.fairchildsemi.com
FDC637BNZ N-Channel 2.5V Specified PowerTrench® MOSFET
TRADEMARKS
following registered unregistered trademarks service marks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks. ACEx® Build NowCorePLUSCROSSVOLTCTLCurrent Transfer LogicEcoSPARK®
Fairchild® Fairchild Semiconductor® FACT Quiet SeriesFACT® FAST® FastvCoreFPSFRFET® Global Power ResourceSM
Green FPSGreen OPTOPLANAR®
PDP-SPMPower220®
Power247® POWEREDGE® Power-SPMPowerTrench® Programmable Active DroopQFET® QSQT OptoelectronicsQuiet SeriesRapidConfigureSMART STARTSPM® STEALTHSuperFETSuperSOTTM-3 SuperSOTTM-6
SuperSOTTM-8 SyncFETThe Power Franchise®
TinyBoostTinyBuckTinyLogic® UniFETVCX
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION, DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS. THESE SPECIFICATIONS EXPAND TERMS FAIRCHILD'S WORLDWIDE TERMS CONDITIONS, SPECIFICALLY WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION.
used herein: Life support devices systems devices systems which, intended surgical implant into body support sustain life, whose failure perform when properly used accordance with instructions provided labeling, reasonably expected result significant injury user.
critical component component life support, device, system whose failure perform reasonably expected cause failure life support device system, affect safety effectiveness.
PRODUCT STATUS DEFINITIONS Definition Terms Datasheet Identification Product Status Definition
Advance Information Preliminary Identification Needed
Formative Design First Production Full Production
This datasheet contains design specifications product development. Specifications change manner without notice.
Rev.
This datasheet contains preliminary data; supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice improve design. This datasheet contains specifications product that been discontinued Fairchild Semiconductor. datasheet printed reference information only.
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Obsolete
Production
©2007 Fairchild Semiconductor Corporation FDC637BNZ Rev.C

FDC637BNZ 20V, 6.2A, Features rDS(on) 4.5V, 6.2A rDS(on) 2.5

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