Dual N-Channel MOSFET SOP-8 Definition: Source Drain Gate Dr

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Dual N-Channel MOSFET SOP-8 Definition: Source Drain Gate Dr

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TSM4944D
Dual N-Channel MOSFET
SOP-8
Definition: Source Drain Gate Drain Source Drain Gate Drain
PRODUCT SUMMARY RDS(on)(m)
13.2 4.5V
12.2
Features
Advance Trench Process Technology High Density Cell Design Ultra On-resistance
Block Diagram
Application
Load Switch Dc-DC Conversion
Ordering Information
Part
TSM4944DCS
Package
SOP-8
Packing
2.5Kpcs Reel Dual N-Channel MOSFET
Absolute Maximum Rating 25oC unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction Temperature Operating Junction Storage Temperature Range
Symbol
TSTG
Limit
12.2 +150 +150
Unit
Thermal Performance
Parameter
Junction Case Thermal Resistance Junction Ambient Thermal Resistance (PCB mounted) Notes: Maximum current limited package Surface Mounted Board, sec.
Symbol
Limit
Unit
Version:
TSM4944D
Dual N-Channel MOSFET
Electrical Specifications 25oC unless otherwise noted)
Parameter
Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-State Resistance Forward Transconductance Diode Forward Voltage Dynamic
Conditions
250uA VGS, 250uA ±20V, 30V, 10V, 12.2A 4.5V, 9.4A 15V, 1.9A,
Symbol
BVDSS VGS(TH) IGSS IDSS ID(ON) RDS(ON) Ciss Coss Crss td(on) td(off)
-1.8 15.4 0.85 2134
-3.0 ±100 -13.2 -1.3
Unit
Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching
15V, 12.2A, 15V, 1.0MHz
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time
15V, VGEN 10V,
Turn-Off Fall Time Notes: pulse test: 300µS, duty cycle DESIGN ONLY, subject production testing. Switching time essentially independent operating temperature.
Version:
TSM4944D
Dual N-Channel MOSFET
SOP-8 Mechanical Drawing
SOP-8 DIMENSION MILLIMETERS INCHES MAX. 4.80 5.00 0.189 0.196 3.80 4.00 0.150 0.157 1.35 1.75 0.054 0.068 0.35 0.49 0.014 0.019 0.40 1.25 0.016 0.049 1.27BSC 0.05BSC 0.10 0.25 0.004 0.009 5.80 6.20 0.229 0.244 0.25 0.50 0.010 0.019
Marking Diagram
Year Code Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) Code
Version:
TSM4944D
Dual N-Channel MOSFET
Notice
Specifications products displayed herein subject change without notice. anyone behalf, assumes responsibility liability errors inaccuracies. Information contained herein intended provide product description only. license, express implied, intellectual property rights granted this document. Except provided TSC's terms conditions sale such products, assumes liability whatsoever, disclaims express implied warranty, relating sale and/or products including liability warranties relating fitness particular purpose, merchantability, infringement patent, copyright, other intellectual property right. products shown herein designed medical, life-saving, life-sustaining applications. Customers using selling these products such applications their risk agree fully indemnify damages resulting from such improper sale.
Version:

Dual N-Channel MOSFET SOP-8 Definition: Source Drain Gate Dr

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