P-channel 0.047 TO-254AA Rad-hard gate charge STripFETPower MOSFET

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P-channel 0.047 TO-254AA Rad-hard gate charge STripFETPower MOSFET

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STRH50P6FSY1 STRH50P6FSY3
P-channel 0.047 TO-254AA Rad-hard gate charge STripFETPower MOSFET
Type STRH50P6FSY1 STRH50P6FSY3
VDSS
RDS(on) Fast switching Single event effect (SEE) hardned total gate charge Light weight 100% avalanche tested Application oriented characterization Hermetically sealed Heavy kRad SEGR with ions Figure Internal schematic diagram
TO-254AA
Applications
Satellite High reliability
Description
This Power MOSFET series realized with STMicroelectronics unique STripFET process specifically been designed sustain high provide immunity heavy effects. therefore suitable power switch mainly highefficiency DC-DC converters. also intended application with gate charge drive requirements. Table Device summary
Order codes STRH50P6FSY1 STRH50P6FSY3
temp range Space flights parts (full ESCC flow screening)
Marking RH50P6FSY1 RH50P6FSY3
Package TO-254AA TO-254AA
Packaging Individual strip pack Individual strip pack
November 2007
1/13
www.st.com
Contents
STRH50P6FSY3
Contents
Electrical ratings Electrical characteristics
Pre-irradiation Post-irradiation Electrical characteristics (curves)
Test circuit Package mechanical data Revision history
2/13
STRH50P6FSY3
Electrical ratings
Electrical ratings
Table
Symbol
Absolute maximum ratings (pre-irradiation)
Parameter Drain-source voltage (VGS Gate-source voltage Drain current (continuous) 25°C Drain current (continuous) 100°C Drain current (pulsed) Total dissipation 25°C Value Unit V/ns
PTOT
dv/dt Peak diode recovery voltage slope Tstg Storage temperature Max. operating junction temperature
Rated according Rthj-case Rthc-s Pulse width limited safe operating area di/dt A/µs, 80%V(BR)DSS
Table
Symbol
Thermal data
Parameter Value 0.21 Unit °C/W °C/W °C/W
Rthj-case Thermal resistance junction-case Rthc-s Case-to-sink
Rthj-amb Thermal resistance junction -amb
Table
Symbol EAR(1)
Avalanche characteristics
Parameter Avalanche current, repetitive not-repetitive (pulse width limited Max) Single pulse avalanche energy (starting Tj=25°C, ID=IAR, VDD=42 Repetitive avalanche Value Unit
Pulse number KHz; D.C.
Note:
P-channel MOSFET actual polarity voltages current reversed
3/13
Electrical characteristics
STRH50P6FSY3
Electrical characteristics
(TCASE 25°C unless otherwise specified)
Pre-irradiation
Table
Symbol IDSS IGSS V(BR)DSS VGS(th) RDS(on)
On/off states
Parameter Zero gate voltage drain current (VGS Gate body leakage current (VDS Drain-source breakdown voltage Gate threshold voltage Static drain-source resistance Test conditions BVDss =VGS, 0.047 0.053 Min. Typ.
±100
Unit
Table
Symbol Ciss Coss Crss
Dynamic
Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Gate input resistance Test conditions Min. 2632 187.2 92.8 10.4 20.8 Typ. 3290 3948 280.8 139.2 15.6 31.2 Unit
MHz, VGS=0
VGS=12 f=1MHz Gate Bias=0 Test signal level=20 open drain
Table
Symbol td(on) td(off)
Switching times
Parameter Turn-on delay time Rise time Turn-off-delay time Fall time Test conditions Min. 13.6 65.6 28.8 Typ. 20.4 98.4 43.2 Unit
4/13
STRH50P6FSY3
Electrical characteristics
Table
Symbol ISDM IRRM IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current di/dt A/µs VDD= 25°C di/dt A/µs VDD= 150°C 3.85 25.6 5.64 Test conditions Min. Typ. Unit
Pulse width limited safe operating area Pulsed: pulse duration 300µs, duty cycle 1.5%
Post-irradiation
rad-hard power MOSFETs tested verify radiation capability. technology extremely resistant assurance well functioning device inside radiation environments. Every manufacturing tested total ionizing dose. (@Tj=25°C 100Krad (a)) Table
Symbol IDSS IGSS V(BR)DSS VGS(th) RDS(on)
On/off states
Parameter Zero gate voltage drain current (VGS Gate body leakage current (VDS Drain-source breakdown voltage Gate threshold voltage Static drain-source resistance Test conditions BVDss =VGS, 0.047 0.053 Min. Typ.
±100
Unit
According ESCC 22900 specification, Co60 gamma rays, dose rate:0.1rad/sec.
5/13
Electrical characteristics Table
STRH50P6FSY3
Single event effect, SOA(1)
(Mev/(mg/cm2)) 55.9 Energy (MeV) Range (µm) @VGS0V
Rad-Hard Power MOSFETs have been characterized heavy environment single event effect (SEE). Single event effect characterization illustrated
Figure
Bias condition during radiation
Table
Symbol ISDM IRRM IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current di/dt A/µs VDD= 25°C di/dt A/µs VDD= 150°C 3.85 25.6 5.64 Test conditions Min. Typ. Unit
Pulse width limited safe operating area Pulsed: pulse duration 300µs, duty cycle 1.5%
6/13
STRH50P6FSY3
Electrical characteristics
Figure
Electrical characteristics (curves)
Safe operating area Figure Thermal impedance
Figure
Output characteristics
Figure
Transfer characteristics
Figure
Gate charge gate-source voltage Figure
Capacitance variations
7/13
Electrical characteristics Figure Normalized BVDSS temperature
STRH50P6FSY3 Figure Static drain-source resistance
Figure Normalized gate threshold voltage temperature
Figure Normalized resistance temperature
Figure Source drain-diode forward characteristics
8/13
STRH50P6FSY3
Test circuit
Test circuit
Figure Switching times test circuit resistive load
driver slope 1V/ns DUT)
Figure Unclamped inductive load test circuit (single pulse repetitive)
9/13
Package mechanical data
STRH50P6FSY3
Package mechanical data
order meet environmental requirements, offers these devices ECOPACK® packages. These packages have lead-free second level interconnect. category second level interconnect marked package inner label, compliance with JEDEC Standard JESD97. maximum ratings related soldering conditions also marked inner label. ECOPACK trademark. ECOPACK specifications available www.st.com
10/13
STRH50P6FSY3
Package mechanical data
Table
DIM.
TO-254AA mechanical data
MIN. MAX. 13.84 13.84 20.32 6.60 1.27 3.78 17.40 6.86 0.89 3.81 3.81 12.95 3.05 0.71 1.65 0.065 14.50 0.510 0.120 0.025 0.040 1.14 0.035 0.150 0.150 0.570 MIN. 0.535 0.535 0.790 0.249 0.040 0.139 0.665 0.270 0.045 inch TYP. MAX. 0.545 0.545 0.80 0.260 0.050 0.149 0.685
13.59 13.59 20.07 6.32 1.02 3.53 16.89
Mechanical drawing
11/13
Revision history
STRH50P6FSY3
Revision history
Table
Date 05-Jul-2006 20-Dec-2006
Document revision history
Revision First release Figure been updated Note device summary been corrected Added figures: Updated values tables: Minor text changes improve readability Changes
20-Nov-2007
12/13
STRH50P6FSY3
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P-channel 0.047 TO-254AA Rad-hard gate charge STripFETPower MOSFET

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