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Dimensions TO-220AC C(TAB) A=Anode, C=Cathode, TAB=Cathode M
Top Searches for this datasheetMUR8100 Dimensions TO-220AC C(TAB) A=Anode, C=Cathode, TAB=Cathode MUR8100 VRSM 1000 VRRM 1000 Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39 Symbol IFRMS IFAVM IFRM Test Conditions TVJ=TVJM TC=100oC; rectangular, d=0.5 tp<10us; rep. rating, pulse width limited TVJM TVJ=45oC t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine Maximum Ratings -40.+150 -40.+150 Unit IFSM TVJ=150oC TVJ=45oC TVJ=150oC TVJM Tstg Ptot Weight TC=25oC mounting torque 0.4.0.6 MUR8100 Symbol Test Conditions TVJ=25oC; VR=VRRM TVJ=25oC; VR=0.8.VRRM TVJ=125oC; VR=0.8.VRRM IF=12A; TVJ=150oC TVJ=25oC power-loss calculations only TVJ=TVJM Characteristic Values typ. max. 1.67 33.6 Unit RthJC RthCK RthJA IF=1A; -di/dt=50A/us; VR=30V; TVJ=25oC VR=540V; IF=12A; -diF/dt=100A/us; L<0.05uH; TVJ=100 FEATURES International standard package JEDEC TO-220AC Planar passivated chips Very short recovery time Extremely switching losses IRM-values Soft recovery behaviour APPLICATIONS Antiparallel diode high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode converters motor control circuits Rectifiers switch mode power supplies (SMPS) Inductive heating melting Uninterruptible power supplies (UPS) Ultrasonic cleaners welders ADVANTAGES High reliability circuit operation voltage peaks reduced protection circuits noise switching losses Operating lower temperature space saving reduced cooling MUR8100 Fig. Forward current versus voltage drop. Fig. Recovery charge versus -diF/dt. Fig. Peak reverse current versus -diF/dt. Fig. Dynamic parameters versus junction temperature. Fig. Recovery time versus -diF/dt. Fig. Peak forward voltage versus diF/dt. Fig. Transient thermal impedance junction case. Other recent searchesSIGC156T60NR2C - SIGC156T60NR2C SIGC156T60NR2C Datasheet IDT74ALVCF162835A - IDT74ALVCF162835A IDT74ALVCF162835A Datasheet EN7234B - EN7234B EN7234B Datasheet LA6393AT - LA6393AT LA6393AT Datasheet EL2003C - EL2003C EL2003C Datasheet EL2033C - EL2033C EL2033C Datasheet DN-71 - DN-71 DN-71 Datasheet BUX32 - BUX32 BUX32 Datasheet BCR569 - BCR569 BCR569 Datasheet
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