AO3434 uses advanced trench technology provide excellent RDS(ON) gate

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AO3434 uses advanced trench technology provide excellent RDS(ON) gate

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AO3434 N-Channel Enhancement Mode Field Effect Transistor
AO3434 uses advanced trench technology provide excellent RDS(ON) gate charge. This device suitable load switch applications. protected. Standard Product AO3434 Pb-free (meets ROHS Sony specifications).
4.2A RDS(ON) RDS(ON) (VGS 10V) (VGS 10V) (VGS 4.5V)
Protected
TO-236 (SOT-23) View
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation
Symbol TSTG
Maximum Steady-State 0.64
Units
TA=25°C TA=70°C TA=25°C TA=70°C
Junction Storage Temperature Range Thermal Characteristics Parameter
Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead
Symbol
Steady-State Steady-State
Units °C/W °C/W °C/W
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AO3434
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V TJ=55°C VDS=0V, VGS= ±16V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=4.2A RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=2A Forward Transconductance VDS=5V, ID=4.2A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125°C 0.77 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=4.2A 1.37 0.65 VGS=10V, VDS=15V, RL=3.6, RGEN=3 IF=4.2A, dI/dt=100A/µs
Units
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current
1.32
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge tD(on) tD(off) Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
15.2 15.5
Body Diode Reverse Recovery Charge IF=4.2A, dI/dt=100A/µs
value measured with device mounted FR-4 board with 2oz. Copper, still environment with A=25°C. value given application depends user's specific board design. Repetitive rating, pulse width limited junction temperature. thermal impedence from junction lead lead ambient. static characteristics Figures obtained using <300 pulses, duty cycle 0.5% max. These tests performed with device mounted FR-4 board with 2oz. Copper, still environment with A=25°C. curve provides single pulse rating. F.The current rating based t10s thermal resistance rating. Rev0: Mar. 2007
THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AO3434
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
VGS=3V (Volts) On-Region Characteristics RDS(ON) Figure On-Resistance Drain Current Gate Voltage ID=4.2A 1.0E+01 1.0E+00 1.0E-01 1.0E-02 125°C 25°C Normalized On-Resistance VGS=4.5V Temperature (°C) Figure On-Resistance Junction Temperature VGS=4.5V Id=3.5A VGS=10V Id=4.2A VGS(Volts) Figure Transfer Characteristics 4.5V ID(A) 3.5V 125°C 25°C VDS=5V
VGS=10V
125°C
THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL 1.0E-03 COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS25°CUSES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, 1.0E-04 FUNCTIONS RELIABILITY WITHOUT NOTICE. (Volts) Figure On-Resistance Gate-Source Voltage 1.0E-05 (Volts) Figure Body-Diode Characteristics
Alpha Omega Semiconductor, Ltd.
RDS(ON)
www.aosmd.com
AO3434
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
(Volts) (nC) Figure Gate-Charge Characteristics VDS=15V ID=4.2A Capacitance (pF) Ciss Coss Crss (Volts) Figure Capacitance Characteristics
100.0 10µs 10.0 (Amps) RDS(ON) limited 100µ 10ms TJ(Max)=150°C TA=25°C 0.1s
Power 0.001 TJ(Max)=150°C TA=25°C
0.01
(Volts)
0.01
1000
Figure Maximum Forward Biased Safe Operating Area (Note
Pulse Width Figure Single Pulse Power Rating Junction-toAmbient (Note
Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=125°C/W
descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. AOSPD DOES ASSUME LIABILITY ARISIG SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE. Single Pulse 0.01 0.00001 0.0001 0.001 0.01 1000 Pulse Width Figure Normalized Maximum Transient Thermal Impedance
Alpha Omega Semiconductor, Ltd.
www.aosmd.com

AO3434 uses advanced trench technology provide excellent RDS(ON) gate

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