FSS173 FSS173 Features P-Channel Silicon MOSFET Ge

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FSS173 FSS173 Features P-Channel Silicon MOSFET Ge

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Ordering number ENA0480
FSS173
FSS173
Features
P-Channel Silicon MOSFET
General-Purpose Switching Device Applications
ON-resistance. drive.
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW10s) Drain Current (PW10µs) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS Tstg Duty cycle1% Duty cycle1% Mounted ceramic board (1200mm2!0.8mm), PW10s Conditions Ratings +150 Unit
Electrical Characteristics Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on)1 RDS(on)2 Ciss Coss Crss Conditions ID=-1mA, VGS=0V VDS=-45V, VGS=0V VGS= ±16V, VDS=0V VDS=-10V, ID=-1mA VDS=-10V, ID=-6A ID=-6A, VGS=-10V ID=-3A, VGS=-4V VDS=-20V, f=1MHz VDS=-20V, f=1MHz VDS=-20V, f=1MHz Ratings -1.2 2580 -2.6 Unit
Marking S173
Continued next page.
SANYO Semiconductor products described contained herein have specifications that handle applications that require extremely high levels reliability, such life-support systems, aircraft's control systems, other applications whose failure reasonably expected result serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest before usingany SANYO Semiconductor products described contained herein such applications. SANYO Semiconductor assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor products described contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
73106PA TB-00002429 A0480-1/4
FSS173
Continued from preceding page.
Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol td(on) td(off) Conditions specified Test Circuit. specified Test Circuit. specified Test Circuit. specified Test Circuit. VDS=-24V, VGS=-10V, ID=-6A VDS=-24V, VGS=-10V, ID=-6A VDS=-24V, VGS=-10V, ID=-6A IS=-6A, VGS=0V Ratings -0.82 -1.5 Unit
Package Dimensions
unit (typ) 7005-002
Switching Time Test Circuit
VDD= -24V
-10V RL=4
PW=10µs D.C.1%
VOUT
0.43
Source Source Source Gate Drain Drain Drain Drain SANYO SOP8
FSS173
0.595
1.27
-3.5
-8.0V
VDS= -10V
Drain Current,
Drain Current,
-10.0V
-0.2 -0.4 -0.6 -0.8 -1.0 IT11339
-0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 -3.2 -3.6 -4.0
Drain-to-Source Voltage,
Gate-to-Source Voltage,
-25°C
VGS= -2.5V
Ta=7
IT11340
A0480-2/4
FSS173
RDS(on)
Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on)
RDS(on)
Static Drain-to-Source On-State Resistance, RDS(on)
Gate-to-Source Voltage,
IT11341 -1.0 -0.1
Ambient Temperature,
IT11342
VGS=0V
Forward Transfer Admittance,
VDS= -10V
Source Current,
-0.01
-0.1
-1.0
Drain Current,
IT11343
-0.01 -0.001 -0.2
-0.4
-0.6
-25°
-0.8
-1.0
-1.2 IT11344
Time
td(off)
VDD= -24V VGS= -10V
Ciss, Coss, Crss
f=1MHz
Ciss
Diode Forward Voltage,
Switching Time, Time
Ciss, Coss, Crss
1000
td(on)
Coss
Crss
-0.1 -1.0 IT11345 -1.0 -0.1
Drain Current,
Drain-to-Source Voltage,
IT11346
Gate-to-Source Voltage,
VDS= -10V
IDP= -24A
10µs
Drain Current,
Operation this area limited RDS(on).
-0.01 -0.01
Ta=25°C Single pulse Mounted ceramic board (1200mm2!0.8mm)
7-0.1 7-1.0
Total Gate Charge,
IT11347
Drain-to-Source Voltage,
IT11348
A0480-3/4
FSS173
Allowable Power Dissipation,
Ambient Temperature,
IT11349
Note usage Since FSS173 MOSFET product, please avoid using this device vicinity highly charged objects.
Specifications SANYO Semiconductor products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer's products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer's products equipment. SANYO Semiconductor Co., Ltd. strives supply high-quality high-reliability products. However, semiconductor products fail with some probability. possible that these probabilistic failures could give rise accidents events that could endanger human lives, that could give rise smoke fire, that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor products (including technical data,services) described contained herein controlled under applicable local export control laws regulations, such products must exported without obtaining export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written permission SANYO Semiconductor Co., Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. SANYO Semiconductor believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties.
This catalog provides information July, 2006. Specifications information herein subject change without notice.
A0480-4/4

FSS173 FSS173 Features P-Channel Silicon MOSFET Ge

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