HUF75344A3 N-Channel UltraFET Power MOSFET 55V, 75A, Feature

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HUF75344A3 N-Channel UltraFET Power MOSFET 55V, 75A, Feature

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HUF75344A3 N-Channel UltraFET Power MOSFET
HUF75344A3
N-Channel UltraFET Power MOSFET
55V, 75A, Features
RDS(on) 6.5m Typ.)@ 10V, RoHS compliant
Description
This N-channel power MOSFET produced using Fairchild Semiconductor's innovative UItraFET process. This advanced process technology achieves lowest possible on-resistance silicon area, resulting outstanding performance. This device capable withstanding high energy avalanche mode diode exhibits very reverse recovery time stored change. designed applications where power efficiency important, such switching regulators, switching converters, motro drives, relay drivers, low-voltage switches, power management portable battery-operated products.
TO-3PN
MOSFET Maximum Ratings 25oC unless otherwise noted
Symbol VDSS VGSS TSTG Parameter Drain Source Voltage Gate Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Power Dissipation 25oC) Derate above 25oC -Continuous 130oC) Pulsed (Note Ratings 1153 288.5 1.92 +175 Units W/oC
Operating Storage Temperature Range Maximum Lead Temperature Soldering Purpose, 1/8" from Case Seconds
Thermal Characteristics
Symbol Parameter Thermal Resistance, Junction Case Thermal Resistance, Junction Ambient Ratings 0.52 Units
©2007 Fairchild Semiconductor Corporation HUF75344A3 Rev.
www.fairchildsemi.com
HUF75344A3 N-Channel UltraFET Power MOSFET
Package Marking Ordering Information 25oC unless otherwise noted
Device Marking HUF75344A3 Device HUF75344A3 Package TO-3PN Reel Size Tape Width Quantity
Electrical Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
Characteristics
BVDSS BVDSS IDSS IGSS Drain Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate Body Leakage Current 250µA, 25oC 250µA, Referenced 50V, 45V, 150oC ±20V,
0.07
±100
V/oC
Characteristics
VGS(th) RDS(on) Gate Threshold Voltage Static Drain Source Resistance VDS, 250µA 10V,
Dynamic Characteristics
Ciss Coss Crss Qg(tot) Qg(10) Qg(th) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Total Gate Charge Threshold Gate Charge Gate Source Gate Charge Gate Drain "Miller" Charge 25V, 1MHz 3650 4855 1305
Switching Characteristics
td(on) td(off) tOFF Turn-On Time Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Turn-Off Time 30V, =10V, RGEN
Drain-Source Diode Characteristics
Drain Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge dIF/dt 100A/µs 1.25
Notes: 0.41mH, 75A, 50V, 10V, Starting 25oC
HUF75344A3 Rev.
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HUF75344A3 N-Channel UltraFET Power MOSFET
Typical Performance Characteristics
Figure On-Region Characteristics
15.0 10.0
Figure Transfer Characteristics
ID,Drain Current[A]
ID,Drain Current[A]
*Notes: 250µs Pulse Test
*Notes: 250µs Pulse Test
VDS,Drain-Source Voltage[V]
VGS,Gate-Source Voltage[V]
Figure On-Resistance Variation Drain Current Gate Voltage
0.020
Figure Body Diode Forward Voltage Variation Source Current Temperature
RDS(ON) Drain-Source On-Resistance
Reverse Drain Current
0.015
0.010
0.005
*Notes:
0.000
*Note:
Drain Current
250µs Pulse Test
VSD, Body Diode Forward Voltage
Figure Capacitance Characteristics
8000
VGS, Gate-Source Voltage
Ciss (Cds shorted) Coss Crss
Figure Gate Charge Characteristics
6000 Capacitances [pF]
Ciss
*Note: 1MHz
4000
Coss
2000
Crss
*Note:
VDS, Drain-Source Voltage
Total Gate Charge [nC]
HUF75344A3 Rev.
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HUF75344A3 N-Channel UltraFET Power MOSFET
Typical Performance Characteristics (Continued)
Figure Breakdown Voltage Variation Temperature
BVDSS, [Normalized] Drain-Source Breakdown Voltage
RDS(on), [Normalized] Drain-Source On-Resistance
Figure On-Resistance Variation Temperature
-100
*Notes:
*Notes: 250µA
-100
Junction Temperature
Junction Temperature
Figure Maximum Safe Operating Area
100µs 50µs
Figure Maximum Drain Current Case Temperature
Drain Current
Drain Current
Operation This Area Limited DS(on)
10ms
*Notes: Single Pulse
VDS, Drain-Source Voltage
Case Temperature
Figure Transient Thermal Response Curve
Thermal Response [ZJC]
0.05 0.02
0.01
0.01 Single pulse
*Notes: ZJC(t) 0.52 Max. Duty Factor, t1/t2 ZJC(t)
1E-3
Rectangular Pulse Duration [sec]
HUF75344A3 Rev.
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HUF75344A3 N-Channel UltraFET Power MOSFET
Gate Charge Test Circuit Waveform
Resistive Switching Test Circuit Waveforms
Unclamped Inductive Switching Test Circuit Waveforms
HUF75344A3 Rev.
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HUF75344A3 N-Channel UltraFET Power MOSFET
Peak Diode Recovery dv/dt Test Circuit Waveforms
HUF75344A3 Rev.
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HUF75344A3 N-Channel UltraFET Power MOSFET
Mechanical Dimensions
TO-3PN
Dimensions Millimeters
HUF75344A3 Rev.
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HUF75344A3 N-Channel UltraFET Power MOSFET
TRADEMARKS
following registered unregistered trademarks service marks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks. ACEx® Build NowCorePLUSCROSSVOLTCTLCurrent Transfer LogicEcoSPARK®
Fairchild® Fairchild Semiconductor® FACT Quiet SeriesFACT® FAST® FastvCoreFPSFRFET® Global Power ResourceSM
Green FPSGreen OPTOPLANAR®
PDP-SPMPower220®
Power247® POWEREDGE® Power-SPMPowerTrench® Programmable Active DroopQFET® QSQT OptoelectronicsQuiet SeriesRapidConfigureSMART STARTSPM® STEALTHSuperFETSuperSOTTM-3 SuperSOTTM-6
SuperSOTTM-8 SyncFETThe Power Franchise®
TinyBoostTinyBuckTinyLogic® UniFETVCX
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION, DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS. THESE SPECIFICATIONS EXPAND TERMS FAIRCHILD'S WORLDWIDE TERMS CONDITIONS, SPECIFICALLY WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION. used herein: Life support devices systems devices systems which, intended surgical implant into body support sustain life, whose failure perform when properly used accordance with instructions provided labeling, reasonably expected result significant injury user. critical component component life support, device, system whose failure perform reasonably expected cause failure life support device system, affect safety effectiveness.
PRODUCT STATUS DEFINITIONS Definition Terms Datasheet Identification Advance Information Product Status Formative Design Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data; supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice improve design. This datasheet contains specifications product that been discontinued Fairchild Semiconductor. datasheet printed reference information only.
Rev.
Preliminary
First Production
Identification Needed
Full Production
Obsolete
Production
HUF75344A3 Rev.
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HUF75344A3 N-Channel UltraFET Power MOSFET 55V, 75A, Feature

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