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AO4449 uses advanced trench technology provide excellent RDS(ON), ultr

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AO4449 P-Channel Enhancement Mode Field Effect Transistor
AO4449 uses advanced trench technology provide excellent RDS(ON), ultra-low gate charge. This device suitable load switch applications. Standard Product AO4449 Pb-free (meets ROHS Sony specifications).
-30V (VGS -10V) RDS(ON) (VGS -10V) RDS(ON) (VGS -4.5V)
SOIC-8 View
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation
Maximum -4.6
Units
TA=25°C TA=70°C TA=25°C TA=70°C TSTG
Junction Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead
Symbol Steady-State Steady-State
Units °C/W °C/W °C/W
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AO4449
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-30V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-7A RDS(ON) Static Drain-Source On-Resistance VGS=-4.5V, ID=-5A Forward Transconductance VDS=-5V, ID=-7A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125°C -0.77 -3.5 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 18.7 VGS=-10V, VDS=-15V, ID=-7A VGS=-10V, VDS=-15V, RL=2.2, RGEN=3 IF=-7A, dI/dt=100A/µs 1225 ±100 Units
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) tD(on) tD(off) Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-7A, dI/dt=100A/µs
value measured with device mounted FR-4 board with 2oz. Copper, still environment with =25°C. value given application depends user's specific board design. current rating based thermal resistance rating. Repetitive rating, pulse width limited junction temperature. thermal impedence from junction lead lead ambient. static characteristics Figures obtained using <300 pulses, duty cycle 0.5% max. These tests performed with device mounted FR-4 board with 2oz. Copper, still environment with A=25°C. curve provides single pulse rating. F.The current rating based thermal resistance rating. Rev0: 2006 THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AO4449
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
-VDS (Volts) Figure On-Region Characteristics Normalized On-Resistance RDS(ON) Figure On-Resistance Drain Current Gate Voltage RDS(ON) -VGS (Volts) Figure On-Resistance Gate-Source Voltage 25°C 125°C ID=-7A 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 1.0E-06 -VSD (Volts) Figure Body-Diode Characteristics 25°C 125°C VGS=-10V 2.00 VGS=-4.5V 1.80 1.60 1.40 1.20 1.00 0.80 Temperature (°C) Figure On-Resistance Junction Temperature VGS=-4.5V ID=-5A VGS=-10V ID=-7A VGS=-3V -VGS(Volts) Figure Transfer Characteristics 125°C 25°C -3.5V -ID(A) -10V -4.5V VDS=-5V
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AO4449
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
-VGS (Volts) (nC) Figure Gate-Charge Characteristics VDS=-15V ID=-7A 1500 1250 Ciss Capacitance (pF) 1000 -VDS (Volts) Figure Capacitance Characteristics
Coss
Crss
100.0 10µs 10.0 (Amps) RDS(ON) limited TJ(Max)=150°C TA=25°C 0.1ms Power 0.1s
0.01
0.0001
TJ(Max)=150°C TA=25°C
0.001
0.01
(Volts) Figure Maximum Forward Biased Safe Operating Area (Note
Pulse Width Figure Single Pulse Power Rating Junction-toAmbient (Note
Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=40°C/W descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse 0.01 0.00001
0.0001
Pulse Width Figure Normalized Maximum Transient Thermal Impedance
0.001
0.01
1000
Alpha Omega Semiconductor, Ltd.
www.aosmd.com

AO4449 uses advanced trench technology provide excellent RDS(ON), ultr

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