F5H2201 Epitaxial Planar Silicon Transistor F5H2201 App
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Ordering number ENA0403
F5H2201
Epitaxial Planar Silicon Transistor
F5H2201
Applications
High-Speed Switching Applications
High-speed switching applications (switching regulator, driver circuit).
Features
Adoption MBIT process. Large current capacitance. collector-to-emitter saturation voltage. High-speed switching. F5H2201 consists chips which equivalent 2SC6082 encapsulated package.
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (PW=1s) Collector Current (PW=100ms) Collector Current (Pulse) Base Current Collector Dissipation Total Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO Tstg Duty cycle1% Duty cycle1% PW10µs, duty cycle10% Conditions Ratings Tc=25°C, 1unit Tc=25°C +150 Unit
SANYO Semiconductor Co.,Ltd. products described contained herein are, with regard "standard application", intended general electronics equipment (home appliances, equipment, communication device, office equipment, industrial equipment etc.). products mentioned herein shall intended "special application" (medical equipment whose purpose sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level reliability directly threaten human lives case failure malfunction product cause harm human bodies, shall they grant guarantee thereof. should intend products applications outside standard applications customer considering such and/or outside scope intended standard applications, please consult with prior intended use. there consultation inquiry before intended use, customer shall solely responsible use. Specifications SANYO Semiconductor Co.,Ltd. products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer' products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer' products equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
53007FA TC-00000572 A0403-1/5
F5H2201
Electrical Characteristics Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff Current Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO tstg Conditions VCB=40V, IE=0A VEB=4V, IC=0A VCE=2V, IC=330mA VCE=2V, IC=10A VCE=10V, IC=2A VCB=10V, f=1MHz IC=7.5A, IB=375mA IC=7.5A, IB=375mA IC=100µA, IE=0A IC=100µA, RBE=0 IC=1mA, RBE= IE=100µA, IC=0A specified Test Circuit. specified Test Circuit. specified Test Circuit. Ratings Unit
Note specifications shown above each individual transistor. Package Dimensions
unit (typ) 7526-001
10.0
Electrical Connection
Base1(TR1) Emitter1(TR1) Collector(Common) Base2(TR2) Emitter2(TR2)
view
16.0
14.0
2.54 1.27
2.75
Base1(TR1) Emitter1(TR1) Collector(Common) Base2(TR2) Emitter2(TR2) SANYO TO-220FI5H
1.27
2.54
Switching Time Test Circuit
OUTPUT
PW=20µs D.C.1% INPUT
470µF VCC=25V
100µF VBE=
IC=20IB1= -20IB2=5A
A0403-2/5
F5H2201
30mA
20mA
15mA
100m
Collector Current,
50mA
Collector Current,
30mA
20mA
10mA
10mA
IB=0mA
IB=0mA
Collector-to-Emitter Voltage,
IT11022 1000
Collector-to-Emitter Voltage,
IT11023
Ta=75°C
25°C -25°C
VCE=2V
VCE=2V
Collector Current,
Current Gain,
IT11024
0.01
Base-to-Emitter Voltage,
1000
Collector Current,
1000
IT11025
Ta=25°C
VCE=2V
Gain-Bandwidth Product,
Current Gain,
1.0V
0.01
0.01
Collector Current,
1000
IT11026
Collector Current,
IT11027
VCE(sat)
f=1MHz
IB=20
Output Capacitance,
Collector-to-Emitter Saturation Voltage, VCE(sat)
0.01 0.01
Collector-to-Base Voltage,
IT11028
Collector Current,
IT11029
A0403-3/5
F5H2201
VCE(sat)
IB=50
Base-to-Emitter Saturation Voltage, VBE(sat)
VBE(sat)
IB=20
Collector-to-Emitter Saturation Voltage, VCE(sat)
-25°C
75°C
0.01 0.01
25°C
0.01
IT11031
Forward Bias
ICP=20A IC=15A (PT=100ms)
Collector Current,
IT11030
Collector Current,
Collector Current,
Collector Dissipation,
IC=10A (DC)
0.01
Tc=25°C Single pulse
IT11032
Collector-to-Emitter Voltage,
Ambient Temperature,
IT11033
Collector Dissipation,
Case Temperature,
IT11034
A0403-4/5
F5H2201
SANYO Semiconductor Co.,Ltd. assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor Co.,Ltd. products described contained herein. SANYO Semiconductor Co.,Ltd. strives supply high-quality high-reliability products, however, semiconductor products fail malfunction with some probability. possible that these probabilistic failures malfunction could give rise accidents events that could endanger human lives, trouble that could give rise smoke fire, accidents that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor Co.,Ltd. products described contained herein controlled under applicable local export control laws regulations, such products require export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written consent SANYO Semiconductor Co.,Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor Co.,Ltd. product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. Upon using technical information products described herein, neither warranty license shall granted with regard intellectual property rights other rights SANYO Semiconductor Co.,Ltd. third party. SANYO Semiconductor Co.,Ltd. shall liable claim suits with regard third party's intellctual property rights which resulted from technical information products mentioned above.
This catalog provides information May, 2007. Specifications information herein subject change without notice.
A0403-5/5
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